17 results
Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1396 / 2012
- Published online by Cambridge University Press:
- 08 February 2012, mrsf11-1396-o06-11
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- 2012
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Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN
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- MRS Online Proceedings Library Archive / Volume 1290 / 2011
- Published online by Cambridge University Press:
- 02 March 2011, mrsf10-1290-i03-06
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- 2011
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Photoluminescence of Eu-doped GaN
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- MRS Online Proceedings Library Archive / Volume 1342 / 2011
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- 30 June 2011, mrss11-1342-v05-04
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- 2011
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
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- 01 February 2011, 0892-FF24-03
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- 2005
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Structural and optical properties of MOCVD InAlN epilayers
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF23-04
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- 2005
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The composition dependence of the optical properties of InN-rich InGaN grown by MBE
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E3.6
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- 2004
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SITE MULTIPLICITY OF RARE EARTH IONS IN III-NITRIDES
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E9.6
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- 2004
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Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.30
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- 2004
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X-ray Excited Optical Luminescence Studies of InGaN and Rare-Earth Doped GaN Epilayers
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E3.31
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- 2004
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Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E3.22
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- 2004
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Luminescence And Structural Properties Of InGaN Epilayer, Quantum Well And Quantum Dot Samples Using Synchrotron Excitation
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G9.11
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- 2000
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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 703-709
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- 2000
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Strain and Compositional Analysis of InGaN/GaN Layers
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G3.52
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- 2000
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Optical Spectroscopy and Composition of InGaN
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.26
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- 1999
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Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.38
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- 1999
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Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
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- 21 February 2011, 535
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- 1995
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The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
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- 21 February 2011, 231
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- 1995
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