Indium tin oxide (ITO) nanowires (NWs) were grown on glass substrates by using ITO sputtering sources (targets) with SnO2 contents in the range of approximately 5.0 to 30.0 wt%. NW growth became apparent at temperatures above 125 °C, and the In, Sn and O contents of the resulting ITO NWs were similar to those of the ITO source. NWs grown from ITO sources containing 5.0 to 12.0 wt% SnO2 had circular or elliptical cross-sections, while those obtained from sources with 12.0 to 30.0 wt% SnO2 exhibited square cross-sections. ITO NWs approximately 2 μm in length were obtained as single crystals with a cubic crystal structure. The resistivity of an ITO NW was measured using four nanoprobes in conjunction with a field emission scanning electron microscope and was found to range from 0.13 to 0.6 μΩ-m, values that were approximately one order of magnitude lower than those of transparent ITO films.