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Survey and monitoring of ASKAP’s RFI environment and trends I: Flagging statistics
- L. Lourenço, A.P. Chippendale, B. Indermuehle, V.A. Moss, Tara Murphy, T.J. Galvin, G. Hellbourg, A.W. Hotan, E. Lenc, M.T. Whiting
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- Journal:
- Publications of the Astronomical Society of Australia / Volume 41 / 2024
- Published online by Cambridge University Press:
- 29 January 2024, e012
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- Article
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We present an initial analysis of Radio Frequency Interference (RFI) flagging statistics from archived Australian SKA Pathfinder (ASKAP) observations for the ‘Survey and Monitoring of ASKAP’s RFI environment and Trends’ (SMART) project. SMART is a two-part observatoryled project combining analysis of archived observations with a dedicated, comprehensive RFI survey. The survey component covers ASKAP’s full 700–1 800 MHz frequency range, including bands not typically used due to severe RFI. Observations are underway to capture a detailed snapshot of the ASKAP RFI environment over representative 24 h periods. In addition to this dedicated survey, we routinely archive and analyse flagging statistics for all scientific observations to monitor the observatory’s RFI environment in near real-time. We use the telescope itself as a very sensitive RFI monitor and directly assess the fraction of scientific observations impacted by RFI. To this end, flag tables are now automatically ingested and aggregated as part of routine ASKAP operations for all science observations, as a function of frequency and time. The data presented in this paper come from processing all archived data for several ASKAP Survey Science Projects (SSPs). We found that the average amount of flagging due to RFI across the routinely used ‘clean’ continuum science bands is 3%. The ‘clean’ mid band from 1 293 to 1 437 MHz (excluding the 144 MHz below 1293 MHz impacted by radionavigation-satellites which is discarded before processing) is the least affected by RFI, followed by the ‘clean’ low band from 742 to 1 085 MHz. ASKAP SSPs lose most of their data to the mobile service in the low band, aeronautical service in the mid band and satellite navigation service in the 1 510–1 797 MHz high band. We also show that for some of these services, the percentage of discarded data has been increasing year-on-year. SMART provides a unique opportunity to study ASKAP’s changing RFI environment, including understanding and updating the default flagging behaviour, inferring the suitability of and calibrating RFI monitoring equipment, monitoring spectrum management compliance in the Australian Radio Quiet Zone – Western Australia (ARQZWA), and informing the implementation of a suite of RFI mitigation techniques.
Silicon Germanium Epitaxy: A New Material for MEMS
- J.T. Borenstein, N.D. Gerrish, R. White, M.T. Currie, E.A. Fitzgerald
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE7.4
- Print publication:
- 2000
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A wide array of materials have been investigated as candidate fabrication templates for precision microelectromechanical structures, including boron-diffused silicon, boron-doped epitaxial silicon, polysilicon, silicon-on-insulator, and wafer-thick bulk structures. Here we present the latest fabrication results for epitaxial silicon-germanium alloys, a new class of materials which possess excellent crystalline structure, are compatible with non-toxic etchants in bulk micromachining, and are capable of on-chip integration with electronics. For MEMS applications, silicon-germanium alloy layers are grown using a graded buffer approach, resulting in very high quality micromachined structures. Very low defect densities are obtained through the use of these relaxed buffers. Original etch-stop studies determined that Ge doping provided a very weak selectivity in anisotropic etchants such as KOH and EDP. However, by extending the range of Ge concentration to over 20%, we have found extremely high etch selectivities in a variety of etchants. Unlike boron-doped layers, SiGe exhibits etch stop characteristics in the non-toxic, process compatible solution TMAH. The combination of independence from boron doping concentration and etchant compatibility make SiGe a material which is ideal for integration with on-chip electronics.
In this work we present the latest fabrication data on comb-drive resonators built using SiGe epitaxial layers. Process compatibility issues related to wafer curvature, surface finish and reactive-ion-etching chemistries are addressed. An unexpected result of the fabrication process, curvature of released structures, is resolved by annealing wafers after the SiGe deposition. Changes in Young's modulus arising from the high atomic fraction of Ge in the device can be determined by simple beam analysis based on observed resonant frequencies. Overall, build precision for these devices is excellent. We conclude by addressing the remaining challenges for wide-scale implementation of silicon-germanium epitaxial MEMS.