14 results
Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation
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- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 19 April 2010, pp. 13-20
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Stress Modulated Composition Fluctuation and Diffusion in near lattice match AlInN/GaN
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- / Volume 15 / Issue S2 / July 2009
- Published online by Cambridge University Press:
- 26 July 2009, pp. 1020-1021
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- July 2009
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Innovative Synthesis Methods of Mixed Actinides Compounds with Control of the Composition Homogeneity at a Molecular or Nanometric Scale
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- MRS Online Proceedings Library Archive / Volume 893 / 2005
- Published online by Cambridge University Press:
- 26 February 2011, 0893-JJ08-03
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- 2005
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Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection
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- MRS Online Proceedings Library Archive / Volume 764 / 2003
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- 01 February 2011, C4.4
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- 2003
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High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y1.10
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- 2003
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Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.51
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- 2003
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Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L5.5
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- 2002
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Group-III Nitride Quantum Heterostructures Emitting in the whole Visible Range
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.1
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- 2000
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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 962-967
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- 1999
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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 375-380
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- 1999
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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 333-338
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- 1999
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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in Mbe-Grown GaN-AlGaN Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.69
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- 1998
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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.59
- Print publication:
- 1998
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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G11.7
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- 1998
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