12 results
Surface Conversion Effects in Plasma-Damaged p-GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 558-569
- Print publication:
- 2000
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Device Processing for GaN High Power Electronics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.1.1
- Print publication:
- 2000
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 831-837
- Print publication:
- 2000
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 763-768
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- 1999
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Photoelectrochemical Etching of InxGa1−xN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 691-696
- Print publication:
- 1999
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Surface Conversion Effects in Plasma-Damaged p-GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W10.8
- Print publication:
- 1999
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.66
- Print publication:
- 1999
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Photoelectrochemical Etching of InxGal-xN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.40
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- 1998
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.56
- Print publication:
- 1998
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Implantation and Dry Etching of Group-III-Nitride Semiconductors
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- Journal:
- MRS Bulletin / Volume 22 / Issue 2 / February 1997
- Published online by Cambridge University Press:
- 29 November 2013, pp. 36-43
- Print publication:
- February 1997
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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 373
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- 1996
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Calculations of the Specific Resistance of Contacts to III-V Nitride Compounds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 849
- Print publication:
- 1995
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