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Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substrates

Published online by Cambridge University Press:  31 January 2011

Kyu H. Lee ,
Jeong Y. Lee ,
Y.H. Kwon ,
Tae W. Kang ,
Dong H. Kim ,
D.U. Lee  and
Taewhan Kim
Jeong Y. Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
Tae W. Kang
Affiliation:
Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Taewhan Kim*
Affiliation:
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
*
a) Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy images showed that one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurtzite structures were grown on Al2O3 (0001) substrates by hydride vapor-phase epitaxy without a catalyst. The tip morphology of the GaN nanorods became flat with increasing temperature difference between the gas mixing and the substrate zones. The gas mixing temperature significantly affected the formation of the nanorods, and the substrate temperature influenced the morphology and the strain of the GaN nanorods near the GaN/Al2O3 heterointerface. The strain and the stress existing in the GaN layer near the heterointerface were decreased with increasing growth rate. The formation mechanisms of the GaN nanorods grown on the Al2O3 (0001) substrates are described on the basis of the experimental results.

Keywords

MicrostructureTransmission electron microscopy (TEM)Vapor-phase epitaxy (VPE)
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 8 , August 2009 , pp. 2476 - 2482
Copyright
Copyright © Materials Research Society 2009

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