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Formation kinetics of PbZrxTi1−xO3 thin films

Published online by Cambridge University Press:  03 March 2011

Chi Kong Kwok  and
Seshu B. Desu
Chi Kong Kwok
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061–0237
Seshu B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061–0237
*
a)Author to whom all correspondence should be addressed.
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Abstract

The pyrochlore to perovskite transition in sputtered PZT thin films has been studied using SEM and XRD. The films were annealed in the temperature range between 350 °C and 750 °C, and the transition temperature for pyrochlore to perovskite transition was found to be around 525 °C. Isothermal annealing was used to study the nucleation and growth kinetics of the perovskite phase. The results showed a linear growth rate for the perovskite phase, thereby indicating an interface controlled process. Also, the growth was found to be isotropic in two dimensions parallel to the plane of the substrate. The nucleation of the perovskite phase was found to be random. The effective activation energy of the perovskite transition was found to be 494 kJ/mol using Avrami's approach.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 7 , July 1994 , pp. 1728 - 1733
Copyright
Copyright © Materials Research Society 1994

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