Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications
Research Article
Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient
-
- Published online by Cambridge University Press:
- 15 February 2011, 127
-
- Article
- Export citation
Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer
-
- Published online by Cambridge University Press:
- 15 February 2011, 133
-
- Article
- Export citation
Schottky Diodes on Si1-x-yGexCy Alloys.
-
- Published online by Cambridge University Press:
- 15 February 2011, 137
-
- Article
- Export citation
Phase Separation In III-V Semiconductors
-
- Published online by Cambridge University Press:
- 15 February 2011, 145
-
- Article
- Export citation
On The Origin of The Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown On InP Substrates.
-
- Published online by Cambridge University Press:
- 15 February 2011, 159
-
- Article
- Export citation
Polarized Cathodoluminescence Study of (InP)2/(GaP)2 Bilayer Superlattice Structures
-
- Published online by Cambridge University Press:
- 15 February 2011, 165
-
- Article
- Export citation
Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures
-
- Published online by Cambridge University Press:
- 15 February 2011, 171
-
- Article
- Export citation
InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy
-
- Published online by Cambridge University Press:
- 15 February 2011, 177
-
- Article
- Export citation
Preparation and Time Resolved Photoluminescence of Nanoscale InP Islands in In0.48Ga0.52P
-
- Published online by Cambridge University Press:
- 15 February 2011, 185
-
- Article
- Export citation
Critical Thickness for Strained Quantum Wires
-
- Published online by Cambridge University Press:
- 15 February 2011, 191
-
- Article
- Export citation
Optical Transitions in Strained Si1−yCy and Si1−x−yGexCy Layers on Si(001)
-
- Published online by Cambridge University Press:
- 15 February 2011, 199
-
- Article
- Export citation
Spectroscopic Ellipsometry and Band Structure of Si1–yCy Alloys Grown Pseudomorphically on Si (001)
-
- Published online by Cambridge University Press:
- 15 February 2011, 205
-
- Article
- Export citation
Dielectric Function and Band Gaps of Si1−xCx AND Si0.924−xGe0.076Cx (0≤x≤0.014) Semiconductor Alloys Grown on Si
-
- Published online by Cambridge University Press:
- 15 February 2011, 211
-
- Article
- Export citation
Photoreflectance Study of Strained InAIAs/InP Structures
-
- Published online by Cambridge University Press:
- 15 February 2011, 217
-
- Article
- Export citation
Schottky Barrier Heights of A1/p-Sil-xGex
-
- Published online by Cambridge University Press:
- 15 February 2011, 223
-
- Article
- Export citation
Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering
-
- Published online by Cambridge University Press:
- 15 February 2011, 229
-
- Article
- Export citation
Calculation of Optical Characteristics for Si1-xGExAlloy
-
- Published online by Cambridge University Press:
- 15 February 2011, 237
-
- Article
- Export citation
X-Ray Standing Wave and High Resolution Diffraction Study of Si/Ge Superlattices
-
- Published online by Cambridge University Press:
- 15 February 2011, 243
-
- Article
- Export citation
Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]
-
- Published online by Cambridge University Press:
- 15 February 2011, 251
-
- Article
- Export citation
A New Approach for Determining Epilayer Strain Relaxation and Composition Through High Resolution X-Ray Diffraction
-
- Published online by Cambridge University Press:
- 15 February 2011, 257
-
- Article
- Export citation