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Metalorganic chemical vapor deposition of highly oriented thin film composites of V2O5 and V6O13: Suppression of the metal–semiconductor transition in V6O13

Published online by Cambridge University Press:  01 October 2004

M.B. Sahana
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-560 012, India
S.A. Shivashankar*
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-560 012, India
*
a)Address all correspondence to this author. e-mail: shivu@mrc.iisc.ernet.in
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Abstract

Thin films of vanadium oxides were grown on fused quartz by metalorganic chemical vapor deposition using vanadyl acetylacetonate as the precursor. Growth at temperatures ⩾560 °C results in composites of strongly (00l)-oriented V2O5 and V6O13. The dominant phase of the film changes from V2O5 to V6O13, and back to V2O5, as the growth temperature is raised from 560 to 570 °C, then to 580 °C, as evidenced by x-ray diffraction and Rutherford backscattering analyses. This reentrant-type growth trend was interpreted on the basis of the small difference in the free energy of formation of V2O5 and V6O13 and the presence of metal–oxygen bonds in the precursor. In contrast with single-crystalline V6O13, the film predominantly composed of highly oriented single-crystalline platelets of V6O13 did not undergo the semiconductor–metal transition at −123° K, despite the connectivity being well above the percolation threshold. Instead, a semiconductor-to-semiconductor transition was observed in this film, which is explained in terms of the observed relaxation of the edges of all the platelets of metallic V6O13 to semiconducting V2O5.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

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