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Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors

  • Beihai Ma (a1), Do-Kyun Kwon (a1), Manoj Narayanan and U. (Balu) Balachandran (a1)
  • DOI: http://dx.doi.org/10.1557/jmr.2009.0349
  • Published online: 01 January 2011
Abstract

Antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (EAF ≈ 270 kV/cm) and that for the reverse phase transition (EFA ≈ 230 kV/cm) were measured at room temperature on samples with PLZT films of ≈1-µm thickness. Relative permittivity of ≈560 and dielectric loss of <0.05 were measured near zero DC bias field. Hysteresis loop analysis showed that energy densities of ≈53 and 37 J/cm3 can be stored and recovered from the film-on-foil capacitors at 25 and 150 °C, respectively. Highly accelerated life tests were conducted. The projected mean time to failure is >5000 h when the capacitors are operated at room temperature with an applied field of ≈300 kV/cm.

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a) Address all correspondence to this author. e-mail: bma@anl.gov
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6B. Ma , D.K. Kwon , M. Narayanan and U. Balachandran : Leakage current characteristics and dielectric breakdown of antiferro-electric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils. J. Phys. D: Appl. Phys. 41, 205003 (2008).

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