Skip to main content
×
Home
    • Aa
    • Aa
  • Get access
    Check if you have access via personal or institutional login
  • Cited by 13
  • Cited by
    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Serrao, Felcy Jyothi and Dharmaprakash, S. M. 2016. Sol ageing effect on the structural, optical and electrical properties of Ga-doped ZnO thin films. Materials Technology, Vol. 31, Issue. 8, p. 443.


    Shin, Seung Wook Kim, In Young Kishor, G.V. Yoo, Yeong Yung Kim, Young Baek Heo, Jae Yeong Heo, Gi-Seok Patil, P.S. Kim, Jin Hyeok and Lee, Jeong Yong 2014. Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics. Journal of Alloys and Compounds, Vol. 585, p. 608.


    AlKahlout, Amal 2013. A wet chemical preparation of transparent conducting thin films of Ga-doped ZnO nanoparticles. Journal of Sol-Gel Science and Technology, Vol. 67, Issue. 2, p. 331.


    Kim, In Young Shin, Seung Wook Kim, Min Sung Yun, Jae Ho Heo, Gi Seok Jeong, Chae Hwan Moon, Jong-Ha Lee, Jeong Yong and Kim, Jin Hyoek 2013. Effect of Sputtering Powers on Mg and Ga Co-Doped ZnO Thin Films with Transparent Conducting Characteristics. Korean Journal of Materials Research, Vol. 23, Issue. 3, p. 155.


    Liu, Yanli Li, Yufang and Zeng, Haibo 2013. ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing. Journal of Nanomaterials, Vol. 2013, p. 1.


    Shin, Seung Wook Kim, In Young Jeon, Ki Seok Heo, Jae Yeong Heo, Gi-Seok Patil, P.S. Kim, Jin Hyeok and Lee, Jeong Yong 2013. Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films. Journal of Asian Ceramic Societies, Vol. 1, Issue. 3, p. 262.


    Shin, Seung Wook Agawane, G.L. Kim, In Young Jo, Seung Hyun Kim, Min Sung Heo, Gi-Seok Kim, Jin Hyeok and Lee, Jeong Yong 2013. Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration. Surface and Coatings Technology, Vol. 231, p. 364.


    Shin, Seung Wook Agawane, G.L. Kim, In Young Kwon, Ye Bin Jung, In Ok Gang, Myeng Gil Moholkar, A.V. Moon, Jong-Ha Kim, Jin Hyeok and Lee, Jeong Yong 2012. Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers. Applied Surface Science, Vol. 258, Issue. 12, p. 5073.


    Kim, Ji-Hong Roh, Ji-Hyung Lee, Kyung-Ju Moon, Sung-Joon Kim, Jae-Won Do, Kang-Min Moon, Byung-Moo and Koo, Sang-Mo 2011. Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates. Journal of Crystal Growth, Vol. 334, Issue. 1, p. 72.


    Le, Hong Quang and Chua, Soo Jin 2011. Gallium and indium co-doping of epitaxial zinc oxide thin films grown in water at 90 °C. Journal of Physics D: Applied Physics, Vol. 44, Issue. 12, p. 125104.


    Shin, Seung Wook Lee, Gyoung Hoon Moholkar, A.V. Moon, Jong-Ha Heo, Gi-Seok Kim, Tae-Won Kim, Jin Hyeok and Lee, Jeong Yong 2011. A study on the epitaxy nature and properties of 3wt% Ga-doped epitaxial ZnO thin film on Al2O3 (0001) substrates. Journal of Crystal Growth, Vol. 322, Issue. 1, p. 51.


    Shin, Seung Wook Kwon, Ye Bin Moholkar, A.V. Heo, Gi-Seok Jung, In Ok Moon, Jong-Ha Kim, Jin Hyeok and Lee, Jeong Yong 2011. Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates. Journal of Crystal Growth, Vol. 322, Issue. 1, p. 45.


    Wook Shin, Seung Ung Sim, Kyu Pawar, S.M. Moholkar, A.V. Ok Jung, In Ho Yun, Jae Moon, Jong-Ha Hyeok Kim, Jin and Yong Lee, Jeong 2010. Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250°C. Journal of Crystal Growth, Vol. 312, Issue. 9, p. 1551.


    ×

Effect of film thickness on the structural and electrical properties of Ga-doped ZnO thin films prepared on glass and Al2O3 (0001) substrates by RF magnetron sputtering method

  • Seung Wook Shin, S.M. Pawar (a1), Tae-Won Kim (a2), Jong-Ha Moon and Jin Hyeok Kim (a1)
  • DOI: http://dx.doi.org/10.1557/JMR.2009.0042
  • Published online: 01 July 2012
Abstract

Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

Copyright
Corresponding author
a) Address all correspondence to this author. e-mail: jinhyeok@chonnam.ac.kr
Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

1.V. Assuncao , E. Fortunato , A. Marques , H. Aguas , I. Ferreira , M.E.V. Costa , R. Martins : Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature. Thin Solid Films 427, 401 (2003)

2.V. Bhosle , A. Tiwari , J. Narayan : Electrical properties of transparent and conducting Ga doped ZnO. J. Appl. Phys. 100, 033713 (2006)

3.Y.Z. You , Y.S. Kim , D.H. Choi , H.S. Jang , J.H. Lee , D. Kim : Electrical and optical study of ITO films on glass and polymer substrates prepared by DC magnetron sputtering type negative metal ion beam deposition. Mater. Chem. Phys. 107, 444 (2008)

4.M. Snure , A. Tiwari : Structural, electrical, and optical characterizations of epitaxial Zn1−xGaxO films grown on sapphire (0001) substrate. J. Appl. Phys. 101, 124912 (2007)

5.B.D. Ahn , S.H. Oh , C.H. Lee , G.H. Kim , H.J. Kim , S.Y. Lee : Influence of thermal annealing ambient on Ga-doped ZnO thin films. J. Cryst. Growth 309, 128 (2007)

6.X.H. Yu , J. Ma , F. Ji , Y.H. Wang , X.J. Zhang , C.F. Cheng , H.L. Ma : Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature. Appl. Surf. Sci. 239, 222 (2005)

7.X.L. Chen , B.H. Xu , J.M. Xue , Y. Zhao , C.C. Wei , J. Sun , Y. Wang , X.D. Zhang , X.H. Geng : Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition. Thin Solid Films 515, 3753 (2007)

8.A.K. Abduev , A.K. Akhmedov , A.S. Asvarov : The structural and electrical properties of Ga doped ZnO and Ga, B-codoped ZnO thin films: The effects of additional boron impurity. Sol. Energy Mater. Sol. Cells 91, 258 (2007)

9.L.Y. Lin , M.C. Jeong , D.E. Kim , J.M. Myoung : Micro/nanomechanical properties of aluminum-doped zinc oxide films prepared by radio frequency magnetron sputtering. Surf. Coat. Technol. 201, 2547 (2006)

10.C. Guillen , J. Herrero : High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering. Thin Solid Films 515, 640 (2006)

12.S. Kim , W.I. Lee , E.H. Lee , S.K. Hwang , C. Lee : Dependence of the resistivity and the transmittance of sputter-deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature. J. Mater. Sci. 42, 4845 (2007)

13.Q.B. Ma , Z.Z. Ye , H.P. He , S.H. Hu , J.R. Wang , L.P. Zhu , Y.Z. Zhang , B.H. Zhao : Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering. J. Cryst. Growth 304, 64 (2007)

14.E. Fortunato , V. Assuncao , A. Marques , A. Goncalves , H. Aguas , L. Pereira , I. Ferreira , F.M.B. Fernandes , R.J.C. Silva , R. Martins : ZnO:Ga thin films produced by RF sputtering at room temperature: Effect of the power density. Mater. Sci. Forum 455-456, 12 (2004)

15.B.M. Ataev , A.M. Bagamadova , A.M. Djabrailov , V.V. Mamedov , R.A. Rabadanov : Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD. Thin Solid Films 260, 19 (1995)

16.K.Y. Cheong , N. Muti , S.R. Ramanan : Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique. Thin Solid Films 410, 142 (2002)

17.S-M. Park , T. Ikegami , K. Ebihara : Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition. Thin Solid Films 513, 90 (2006)

18.H. Kato , M. Sano , K. Miyamoto , T. Yao : Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy. J. Cryst. Growth 237-239, 538 (2002)

19.T. Yamada , T. Nebiki , S. Kishimoto , H. Makino , K. Awai , T. Narusawa , T. Yamamoto : Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition. Superlattices Microstruct. 42, 68 (2007)

20.S. Kim , J. Jeon , H.W. Kim , J.G. Lee , C. Lee : Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga-doped ZnO thin films prepared by RF magnetron sputtering. Cryst. Res. Technol. 41, 1194 (2006)

21.S. Christoulakis , M. Suchea , E. Koudoumas , M. Katharakis , N. Katsarakis , G. Kiriakidis : Thickness influence on surface morphology and ozone sensing properties of nanostructured ZnO transparent thin films grown by PLD. Appl. Surf. Sci. 252, 5351 (2006)

22.Z.F. Liu , F.K. Shan , Y.X. Li , B.C. Shin , Y.S. Yu : Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition. J. Cryst. Growth 259, 130 (2003)

23.T.H. Kim , S.H. Jeong , I.-S. Kim , S.S. Kim , B.-T. Lee : Magnetron sputtering growth and characterization of high quality single crystal Ga-doped n-ZnO thin films. Semicond. Sci. Technol. 20, L43 (2005)

24.I. Sayago , M. Aleixandre , A. Martínez , M.J. Fernández , J.P. Santos , J. Gutiérrez , I. Gràcia , M.C. Horrillo : Structural studies of zinc oxide films grown by RF magnetron sputtering. Synth. Met. 148, 37 (2005)

25.J.J. Chen , Y. Gao , F. Zeng , D.M. Li , F. Pan : Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films. Appl. Surf. Sci. 223, 318 (2004)

26.S.H. Jeong , I.S. Kim , S.S. Kim , J.K. Kim , B.T. Lee : Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering. J. Cryst. Growth 264, 110 (2004)

27.K.H. Kim , K.C. Park , D.Y. Ma : Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering. J. Appl. Phys. 81, 7764 (1997)

28.X.H. Yu , J. Ma , F. Ji , Y.H. Wang , C.F. Cheng , H.L. Ma : Thickness dependence of properties of ZnO:Ga films deposited by RF magnetron sputtering. Appl. Surf. Sci. 245, 310 (2005)

29.X. Hao , J. Ma , D. Zhang , T. Yang , H. Ma , Y. Yang , C. Cheng , J. Huang : Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates. Appl. Surf. Sci. 183, 137 (2001)

30.E. Fortunato , A. Goncalves , V. Assuncao , A. Marques , H. Aguas , L. Pereira , I. Ferreira , R. Martins : Growth of ZnO:Ga thin films at room temperature on polymeric substrates: Thickness dependence. Thin Solid Films 442, 121 (2003)

32.B.T. Lee , T.H. Kim , S.H. Jeong : Growth and characterization of single crystalline Ga-doped ZnO films using RF magnetron sputtering. J. Phys. D: Appl. Phys. 39, 957 (2006)

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords: