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Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition

  • Yuankun Zhu (a1), Rueben J. Mendelsberg (a2), Sunnie H.N. Lim (a3), Jiaqi Zhu (a4), Jiecai Han (a4) and André Anders (a5)...
Abstract
Abstract

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

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a)Address all correspondence to this author. e-mail: yuan.kun.zhu@gmail.com
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