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Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

Published online by Cambridge University Press:  31 January 2011

Wei-Fang Su  and
Hong-Ru Guo
Wei-Fang Su
Affiliation:
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan,Republic of China
Hong-Ru Guo
Affiliation:
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan,Republic of China
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Extract

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 977 - 980
Copyright
Copyright © Materials Research Society 2002

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