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    Li, Jian Yang, Yanqing Feng, Guanghai Luo, Xian Sun, Qing and Jin, Na 2013. First-principles study of stability and properties on β-SiC/TiC(111) interface. Journal of Applied Physics, Vol. 114, Issue. 16, p. 163522.

    Chaudhuri, J. Thokala, R. Edgar, J.H. and Sywe, B.S. 1996. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates. Thin Solid Films, Vol. 274, Issue. 1-2, p. 23.

    Parsons, J. D. Roberts, D. A. Wu, J. G. Chadda, A. K. Chen, H-S. and Hockenhull, H. 1992. Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane. MRS Proceedings, Vol. 282,


Space-charge-limited-current conduction in heteroepitaxial 3C–SiC (111) on TiC (111)

  • S.H. Tan (a1), C.P. Beetz (a1), J.M. Carulli (a1), B.Y. Lin (a1) and D.F. Cummings (a1)
  • DOI:
  • Published online: 01 January 2011

Unintentionally doped 3C–SiC (111) films were grown on TiC (111) substrates. The films were characterized by electrical measurements employing Pt Schottky contacts, optical microscopy, and transmission electron microscopy (TEM). The observed current-voltage (I-V) characteristics appear to be dominated by space-charge-limited-current (SCLC) conduction in the films. Analysis of the I-V characteristics has resulted in information pertaining to the electrically active defects in the films. These active defects are believed to be associated with stacking faults and point defects present in the films and contribute to traps at ∼0.656 eV below the conduction band edge. The concentration of traps was found to vary with film thickness and surface morphology.

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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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