Skip to main content
×
Home
    • Aa
    • Aa
  • Get access
    Check if you have access via personal or institutional login
  • Cited by 3
  • Cited by
    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Li, Jian Yang, Yanqing Feng, Guanghai Luo, Xian Sun, Qing and Jin, Na 2013. First-principles study of stability and properties on β-SiC/TiC(111) interface. Journal of Applied Physics, Vol. 114, Issue. 16, p. 163522.


    Chaudhuri, J. Thokala, R. Edgar, J.H. and Sywe, B.S. 1996. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates. Thin Solid Films, Vol. 274, Issue. 1-2, p. 23.


    Parsons, J. D. Roberts, D. A. Wu, J. G. Chadda, A. K. Chen, H-S. and Hockenhull, H. 1992. Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane. MRS Proceedings, Vol. 282,


    ×

Space-charge-limited-current conduction in heteroepitaxial 3C–SiC (111) on TiC (111)

  • S.H. Tan (a1), C.P. Beetz (a1), J.M. Carulli (a1), B.Y. Lin (a1) and D.F. Cummings (a1)
  • DOI: http://dx.doi.org/10.1557/JMR.1992.1816
  • Published online: 01 January 2011
Abstract

Unintentionally doped 3C–SiC (111) films were grown on TiC (111) substrates. The films were characterized by electrical measurements employing Pt Schottky contacts, optical microscopy, and transmission electron microscopy (TEM). The observed current-voltage (I-V) characteristics appear to be dominated by space-charge-limited-current (SCLC) conduction in the films. Analysis of the I-V characteristics has resulted in information pertaining to the electrically active defects in the films. These active defects are believed to be associated with stacking faults and point defects present in the films and contribute to traps at ∼0.656 eV below the conduction band edge. The concentration of traps was found to vary with film thickness and surface morphology.

Copyright
Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

2.K. Das , H. S. Kong , J. B. Petit , J. W. Bumgarner , R. F. Davis , and L. G. Matus , J. ElectroChem Soc. 137, 1598 (1990).

3.S. Ashok , K. Srikanth , A. Badzian , T. Badzian , and R. Messier , Appl. Phys. Lett. 50, 763 (1987).

4.S. Ashok , J. M. Borrego , and R. J. Gutmann , J. Appl. Phys. 51, 1076 (1980).

5.S. Ashok , A. Lester , and S. J. Fonash , IEEE Electron Device Lett. EDL-1 (1980).

8.A. Rose , Phys. Rev. 97, 1538 (1955).

9.N. A. Papanicolaou , A. Christou , and M. L. Gipe , J. Appl. Phys. 65, 3526 (1989).

10.J. A. Edmond , K. Das , and R. F. Davis , J. Appl. Phys. 63, 922 (1988).

11.Yuan Li and P. J. Lin-Chung , Phys. Rev. B 36, 1130 (1987).

12.Peizhen Zhou , M. G. Spencer , G. L. Harris , and Konjit Fekade , Appl. Phys. Lett. 50, 1384 (1987).

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×