Focus Issue: Journal of Materials Research

Wide Energy Gap Semiconductors: Material Issues and Device Implications
Issue date: June 2018
Submission deadline: November 1, 2017

Wide energy gap semiconductors, as distinct from their more conventional counterparts, silicon and gallium arsenide, offer considerable promise for novel electronic and optoelectronic device applications. Due to their higher polar optical phonon energies, the saturation electron drift velocities exhibited by these materials tend to be higher. In addition, the dielectric constants, both static and high-frequency, associated with the wider energy gap semiconductors tend to be smaller than with conventional semiconductors. These factors favor improved electron device performance. Another benefit is their great tolerance to high applied electric field strengths, the breakdown field of a semiconductor material increasing with the magnitude of its energy gap. The high thermal conductivities and resistance to radiation offered by some of these materials further contributes to their appeal. 

The past three decades have seen numerous developments in the wide energy gap semiconductor field, both at the materials level and in the range of device applications now offered. This Focus Issue will present results corresponding to both traditional wide energy gap semiconductors, and some of more recent interest. An emphasis will be placed on the material properties of these semiconductors, and the role that such properties play in defining the range of device applications possible. The range of materials considered will include, but is not limited to, silicon carbide and its polytypes, the III-V nitrides, oxide-based semiconductors, and some more recently developed wide energy gap semiconductor materials.  

Contributed articles are sought in the following areas: 

• Advances in the growth of the wide energy gap semiconductors
• Developments in the processing of the wide energy gap semiconductors
• New device applications possible as a result of the distinct material properties associated with newer wide energy gap semiconductors
• Material properties and how they are distinct from their more conventional counterparts
• Brief overviews of developments in the field over the past three decades
• Brief perspectives on future opportunities for the wide energy gap semiconductors 

GUEST EDITORS

Stephen K. O’Leary, The University of British Columbia, Canada
Michael S. Shur, Rensselaer Polytechnic Institute, USA

MANUSCRIPT SUBMISSION

To be considered for this issue, new and previously unpublished results significant to the development of this field should be presented. The manuscripts must be submitted via the JMR electronic submission system by November 1, 2017. Manuscripts submitted after this deadline will not be considered for the issue due to time constraints on the review process. Please select “Focus issue: Wide Energy Gap Semiconductors” as the manuscript type. Note our manuscript submission minimum length of 6000 words, with a maximum of 6-8 figures. Review articles must be pre-approved by proposal to the Editor-in-Chief. The proposal form and author instructions may be found at www.mrs.org/jmr-instructions. All manuscripts will be reviewed in a normal but expedited fashion. Papers submitted by the deadline and subsequently accepted will be published in the Focus Issue. Other manuscripts that are acceptable but cannot be included in the issue will be scheduled for publication in a subsequent issue of JMR.

Please contact jmr@mrs.org for any questions.