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Utilizing alternate target deposition to increase the magnetoelectric effect at room temperature in a single phase M-type hexaferrite
Published online by Cambridge University Press: 27 June 2017
Abstract
The Magnetoelectric (ME) effect has been observed in single phase hexaferrite bulk and thin films of SrCo2Ti2Fe8O19. In this paper we demonstrate that the ME linear coupling depends strongly on the Co ion concentration relative to the Ti ion concentration exhibiting extremum points at a concentration consistent with above formula. The Alternating Target Laser Ablation Deposition technique was utilized to deposit ME hexaferrite films for the first time. This allows for the deposition of transition metal ions at specific sites in the basic unit cell of the hexaferrite.
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- Functional Oxides Research Letter
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- Copyright © Materials Research Society 2017
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