Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-09T09:38:03.973Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of Silicon

Published online by Cambridge University Press:  15 February 2011

D. Von Der Linde ,
G. Wartmann  and
A. Ozols
D. Von Der Linde
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
G. Wartmann
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
A. Ozols
Affiliation:
Universität Essen-GHS, Fachbereich Physik, 4300 Essen 1, W. Germany
Get access

Abstract

We present time-resolved measurements of spontaneous anti-Stokes and Stokes Raman scattering during pulsed laser heating of crystalline silicon. The time-evolution of the lattice temperature is determined from the measured anti-Stokes/Stokes intensity ratio. In a separate calibration experiment we measure the temperature dependence of the anti-Stokes/Stokes ratio of an oven-heated silicon crystal from 300 K up to 900 K. The phase transition occuring during laser heating is detected by monitoring the changes of the optical reflectivity during laser irradiation. Our data suggest that the phase transition occurs at a lattice temperature of ∼600 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 17
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Permanent address: Institute of Physics, Latvian SSR Acadenmr of Science, Riga,USSR.

References

REFERENCES

1.Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1601 (1980)Google Scholar
2.Lo, H. W. and Compaan, A., Appl. Phys. Lett. 38, 179 (1980Google Scholar
3.Compaan, A., Lo, H. W., Aydinli, A. and Lee, M. C., in Laser and Electron-Beam Solid Interactions and Materials Processing, ed. by Gibbons, J. F., Hess, L. D. and Sigmon, T. W. (North-Holland, N.Y., 1981)Google Scholar
4.Wood, R. F. and Giles, G. E., Phys. Rev. B3 2923 (1981)Google Scholar
5.Compaan, A., Lo, H. W., Lee, M. C. and Aydinli, A., Phys. Rev. B26, 1079 (1982)Google Scholar
6.Wood, R. F., Lowndes, D. H., Jellison, G. E. and Modine, F. A., Appl. Phys. Lett. 41, 287 (1982)Google Scholar
7.von der Linde, D. and Wartmann, G., Appl. Phys. Lett. 41 700 (1982)Google Scholar