Semiconductor devices have been improved by using delta-doped quantum well (DDQW) of impurities due to the great amount of charge carriers it provides. The first proposals consisted of a DDQW close to the Schottky barrier potential in the gate terminal in a FET [1]. In this work we reported the energy levels spectrum for n-type double-DDQW with a Schottky barrier (SB) at their neighborhood in a Gallium Arsenide (GaAs) matrix. In addition to consider only the linear optical approximation we take into account the third order correction to the absorption coefficient and the refractive index change. We report those properties as a function of the Schottky Barrier Height (SBH), several separation distances between the DDQWs, and hydrostatic pressure effects. The results shown that the magnitude of intensity resonance peaks are controlled by the asymmetry of the DDQW+SB.

In this work, we calculated the ground and first excited states of an electron confined in an asymmetric double DDQW system within a Gallium Arsenide (GaAs) matrix. The two-dimensional impurities density (N2d) considered in our calculation are within the range of 1012 to 1013 cm−2. We obtain the linear and nonlinear optical properties related to intersubband transitions as a function of the spacing between δ-doped wells, two-dimensional impurities concentrations as well as in presence of electric field. We reported results for the linear and nonlinear optical absorption coefficient and in the relative refractive index changes. Our results show that the asymmetry induced in the double δ-doped well system gives rise to values that are several orders of magnitude higher in the resonant peaks intensity.

A metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C−2, obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.