Semiconductor devices have been improved by using delta-doped quantum well (DDQW) of impurities due to the great amount of charge carriers it provides. The first proposals consisted of a DDQW close to the Schottky barrier potential in the gate terminal in a FET . In this work we reported the energy levels spectrum for n-type double-DDQW with a Schottky barrier (SB) at their neighborhood in a Gallium Arsenide (GaAs) matrix. In addition to consider only the linear optical approximation we take into account the third order correction to the absorption coefficient and the refractive index change. We report those properties as a function of the Schottky Barrier Height (SBH), several separation distances between the DDQWs, and hydrostatic pressure effects. The results shown that the magnitude of intensity resonance peaks are controlled by the asymmetry of the DDQW+SB.