11 results
Early Beringian Traditions: Functioning and Economy of the Stone Toolkit from Swan Point CZ4b, Alaska
- Eugénie Gauvrit Roux, Yan Axel Gómez Coutouly, Charles E. Holmes, Yu Hirasawa
-
- Journal:
- American Antiquity / Volume 89 / Issue 2 / April 2024
- Published online by Cambridge University Press:
- 08 April 2024, pp. 279-301
- Print publication:
- April 2024
-
- Article
-
- You have access Access
- Open access
- HTML
- Export citation
-
The pressure knapping technique develops circa 25,000 cal BP in Northeast Asia and excels at producing highly standardized microblades. Microblade pressure knapping spreads throughout most of Northeast Asia up to the Russian Arctic, and Alaska, in areas where the human presence was unknown. Swan Point CZ4b is the earliest uncontested evidence of human occupation of Alaska, at around 14,000 cal BP. It yields a pressure microblade component produced with the Yubetsu method, which is widespread in Northeast Asia during the Late Glacial period. Through the techno-functional analysis of 634 lithic pieces from this site, this study seeks to identify the techno-economical purposes for which the Yubetsu method was implemented. Data show that the microblade production system is related to an economy based on the planning of future needs, which is visible through blanks standardization, their overproduction, their functional versatility, and the segmentation of part of the chaîne opératoire. This expresses the efficiency and economic value of the microblade production system. The flexible use of pressure microblades identified at Swan Point CZ4b is also found in Japan, Korea, Kamchatka, and the North Baikal region, suggesting that their modes of use accompany the spread of early microblade pressure knapping over an immense territory across Beringia.
THE SWAN POINT SITE, ALASKA: THE CHRONOLOGY OF A MULTI-COMPONENT ARCHAEOLOGICAL SITE IN EASTERN BERINGIA
- Joshua D Reuther, Charles E Holmes, Gerad M Smith, Francois B Lanoe, Barbara A Crass, Audrey G Rowe, Matthew J Wooller
-
- Journal:
- Radiocarbon / Volume 65 / Issue 3 / June 2023
- Published online by Cambridge University Press:
- 16 May 2023, pp. 693-720
- Print publication:
- June 2023
-
- Article
- Export citation
-
The Swan Point site in interior Alaska contains a significant multi-component archaeological record dating back to 14,200 cal BP. The site’s radiocarbon (14C) chronology has been presented in scattered publications that mostly focus on specific archaeological periods in Alaska, in particular its terminal Pleistocene components associated with the East Beringian tradition. This paper synthesizes the site’s 14C data and provides sequential Bayesian models for its cultural zones and subzones. The 14C and archaeological record at Swan Point attests that the location was persistently used over the last 14,000 years, even though major changes are evident within regional vegetation and local faunal communities, reflecting long-term trends culminating in Dene-Athabascan history.
Mammoth Ivory Rods in Eastern Beringia: Earliest in North America
- Brian T. Wygal, Kathryn E. Krasinski, Charles E. Holmes, Barbara A. Crass, Kathlyn M. Smith
-
- Journal:
- American Antiquity / Volume 87 / Issue 1 / January 2022
- Published online by Cambridge University Press:
- 14 October 2021, pp. 59-79
- Print publication:
- January 2022
-
- Article
- Export citation
-
The Holzman archaeological site, located along Shaw Creek in interior Alaska, contained two mammoth ivory rods, of which one is bi-beveled, within a stratigraphically sealed cultural context. Dated 13,600–13,300 cal BP, these are the earliest known examples of osseous rod technology in the Americas. Beveled ivory, antler, and bone rods and points share technological similarities between Upper Paleolithic Europe, Asia, eastern Beringia, and the Clovis tradition of North America and are important tool types in understanding the late Pleistocene dispersal of modern humans. The Holzman finds are comparable to well-known Clovis tradition artifacts from Anzick (Montana), Blackwater Draw (New Mexico), East Wenatchee (Washington), and Sherman Cave (Ohio). We describe these tools in the broader context of late Pleistocene osseous technology with implications for acquisition and use of mammoth ivory in eastern Beringia and beyond.
THE MICROBLADE INDUSTRY FROM SWAN POINT CULTURAL ZONE 4b: TECHNOLOGICAL AND CULTURAL IMPLICATIONS FROM THE EARLIEST HUMAN OCCUPATION IN ALASKA
- Yan Axel Gómez Coutouly, Charles E. Holmes
-
- Journal:
- American Antiquity / Volume 83 / Issue 4 / October 2018
- Published online by Cambridge University Press:
- 16 October 2018, pp. 735-752
- Print publication:
- October 2018
-
- Article
- Export citation
-
Swan Point in central Alaska contains the oldest recognized human occupation in Alaska (Cultural Zone 4b [CZ4b]), dating to circa 14,000 cal BP. This component consists of a microblade and burin industry with clear technological ties to the Siberian Upper Paleolithic Diuktai Culture. Through the systematic use of the Yubetsu method for the production of microblades, Swan Point is technologically more similar to Siberian microblade sites than to later-age (Denali complex) microblade sites in Alaska. The Yubetsu method is the hallmark of the Diuktai Culture, and in Alaska, Swan Point CZ4b is the only component with systematic production of microblades using the Yubetsu method. Other late Pleistocene and Holocene microblade sites in Alaska have an industry based on Campus-style, conical, or tabular microblade cores. Analysis of the collection furthers our understanding of how CZ4b relates to previous Siberian Diuktai-related assemblages and to later Alaskan Denali-related sites. We interpret the CZ4b component as representing a brief single event that has major cultural and technological implications for the early colonization process of North America.
Animals as Raw Material in Beringia: Insights from the Site of Swan Point CZ4B, Alaska
- François B. Lanoë, Charles E. Holmes
-
- Journal:
- American Antiquity / Volume 81 / Issue 4 / October 2016
- Published online by Cambridge University Press:
- 20 January 2017, pp. 682-696
- Print publication:
- October 2016
-
- Article
- Export citation
-
We document the use of organic raw material in late Pleistocene eastern Beringia through the study of the site of Swan Point CZ4b, in central Alaska. CZ4b is attributed to the Dyuktai culture and dates to about 14,000 cal B.P. We interpret the occupation as a specialized workshop dedicated to the production and maintenance of organic-based tools following three lines of evidence: (1) limited on-site consumption of megafauna, (2) diversity of organic raw materials and techniques used in processing them, and (3) spatial demarcation of specialized activity areas. Specialized workshops are located in the vicinity of naturally occurring accumulations of mammoth bones in both western and eastern Beringia and suggest similarities in animal resource use across Beringia for the Dyuktai culture. Organic technology was a major portion of Dyuktai technology in eastern Beringia, and its lack of visibility in archaeological assemblages is probably due to taphonomic reasons. Changes in the availability of organic raw material throughout the Late Pleistocene offer some implications for the evolution of lithic technology and material culture.
Contributors
-
- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
-
- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
-
- Chapter
- Export citation
Contributors
-
- By Giustino Albanese, Andrew Amaranto, Brandon H. Backlund, Alexander Baxter, Abraham Berger, Mark Bernstein, Marian E. Betz, Omar Bholat, Suzanne Bigelow, Carl Bonnett, Elizabeth Borock, Christopher B. Colwell, Alasdair Conn, Moira Davenport, David Dreitlein, Aaron Eberhardt, Ugo A. Ezenkwele, Diana Felton, Spiros G. Frangos, John E. Frank, Jonathan S. Gates, Lewis Goldfrank, Pinchas Halpern, Jean Hammel, Kristin E. Harkin, Jason S. Haukoos, E. Parker Hays, Aaron Hexdall, James F. Holmes, Debra Houry, Jennifer Isenhour, Andy Jagoda, John L. Kendall, Erica Kreisman, Nancy Kwon, Eric Legome, Matthew R. Levine, Phillip D. Levy, Charles Little, Marion Machado, Heather Mahoney, Vincent J. Markovchick, Nancy Martin, John Marx, Julie Mayglothling, Ron Medzon, Maurizio A. Miglietta, Elizabeth L. Mitchell, Ernest Moore, Maria E. Moreira, Sassan Naderi, Salvatore Pardo, Sajan Patel, David Peak, Christine Preblick, Niels K. Rathlev, Charles Ray, Phillip L. Rice, Carlo L. Rosen, Peter Rosen, Livia Santiago-Rosado, Tamara A. Scerpella, David Schwartz, Fred Severyn, Kaushal Shah, Lee W. Shockley, Mari Siegel, Matthew Simons, Michael Stern, D. Matthew Sullivan, Carrie D. Tibbles, Knox H. Todd, Shawn Ulrich, Neil Waldman, Kurt Whitaker, Stephen J. Wolf, Daniel Zlogar
- Edited by Eric Legome, Lee W. Shockley
-
- Book:
- Trauma
- Published online:
- 07 September 2011
- Print publication:
- 16 June 2011, pp ix-xiv
-
- Chapter
- Export citation
Geological and Cultural Context of the Nogahabara I Site
- Charles E. Holmes, Ben A. Potter, Joshua D. Reuther, Owen K. Mason, Robert M. Thorson, Peter M. Bowers
-
- Journal:
- American Antiquity / Volume 73 / Issue 4 / October 2008
- Published online by Cambridge University Press:
- 20 January 2017, pp. 781-790
- Print publication:
- October 2008
-
- Article
- Export citation
-
Interpretation of the Nogahabara I assemblage as a Late Pleistocene abandoned toolkit rests primarily on the premise of a single brief occupation at the site. The limited contextual data presented do not discount a palimpsest of noncontemporaneous assemblages in secondary contexts associated with a lag deposit. Spatial patterning, lithic assemblage patterning, artifact surface alteration, and disparate radiocarbon dates at the site, as well as geological data from the Nogahabara and nearby Kobuk dunes, indicate that the cultural material was subjected to post-depositional disturbance. Alternate hypotheses of site formation and avenues for testing these hypotheses are considered.
Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates
- Mark E. Twigg, Yoosuf N. Picard, Nabil D. Bassim, Joshua D. Caldwell, Michael A. Mastro, Charles R. Eddy, Richard L. Henry, Ronald T. Holm, Philip G. Neudeck, Andrew J. Trunek, J. Anthony Powell
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1090 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1090-Z05-24
- Print publication:
- 2008
-
- Article
- Export citation
-
Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films grown by metallorganic chemical vapor deposition (MOCVD) on the (0001) surface of epitaxially-grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations.
Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas
- Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell, Hui Du, Marek Skowronski, Nabil D. Bassim, Michael A. Mastro, Mark E. Twigg, Ronald T. Holm, Richard L. Henry, Charles R. Eddy, Jr.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B08-03
- Print publication:
- 2006
-
- Article
- Export citation
-
This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.
Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces
- Charles R. Eddy, Jr, James C. Culbertson, Nabil D. Bassim, Mark E. Twigg, Ronald T. Holm, Robert E. Stahlbush, Richard L. Henry, Philip G. Neudeck, Andrew J. Trunek, J. Anthony Powell
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.7
- Print publication:
- 2003
-
- Article
- Export citation
-
Silicon carbide (SiC) is rapidly becoming the substrate of choice for the development of high frequency and high power electronic devices employing the III-V nitride family of materials. This heteroepitaxial growth system continues to receive considerable attention, as materials issues remain the fundamental limiters to device performance. The heteroepitaxial growth of gallium nitride (GaN) thin films on stepped and step-free 4H SiC surfaces is reported. Step-free SiC surfaces are created by mesa patterning of a SiC wafer and subsequent epitaxial growth in a process described previously. This process results in a collection of both step-free and stepped surfaces on a given sample. We have employed an established metalorganic chemical vapor deposition process to grow first a thin (1200Å) aluminum nitride (AlN) nucleation layer and then a 2 μm thick GaN thin film. We have interrupted growth at various stages of AlN and GaN growth to evaluate the growth evolution using atomic force microscopy (AFM). The results show marked differences in the manner in which the initial AlN layer deposits. Nucleation is random with elongated grains on step-free SiC surfaces, while stepped surfaces have round nuclei of uniform dimensions and a high degree of spatial correlation with the nuclei arranged in rows. These differences diminish as the AlN layer approaches the desired thickness. Growth of the GaN epilayer is also markedly different on the two types of surfaces with step-free surfaces leading to random and low density nucleation of crystallites that remain as single grains for long growth times, whereas the stepped surfaces have large numbers nuclei that rapidly grow laterally. Cross-sectional transmission electron microscopy (TEM) reveals that grain sizes are 2–3X larger on step-free surfaces.