6 results
A Steady-State Model for Coupled Defect Impurity Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 561
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- 1989
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Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]
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- Journal:
- Journal of Materials Research / Volume 2 / Issue 4 / August 1987
- Published online by Cambridge University Press:
- 31 January 2011, pp. 538-539
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- August 1987
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The Diffusivity of Self-Interstitials in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 99
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- 1987
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A New Model of Tail Diffusion of Phosphorus and Boron in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 52 / 1985
- Published online by Cambridge University Press:
- 26 February 2011, 49
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- 1985
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A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 35 / 1984
- Published online by Cambridge University Press:
- 25 February 2011, 341
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- 1984
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Rapid Annealing of Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 23 / 1983
- Published online by Cambridge University Press:
- 22 February 2011, 253
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- 1983
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