Ion implantation can produce open volume defects in silicon by one of two
methods, either by H or He implantation followed by annealing to create a
band of nanocavities and also by direct implantation to reasonably high
doses, which results in a vacancy excess region at depths less than about
half the projected ion range. This paper reviews three interesting aspects
of open volume defects. In the first case, the very efficient gettering of
fast diffusing metals to nanocavities formed by H-implantation is
illustrated. In addition, the non-equilibrium behaviour of Cu3Si
precipitation and dissolution at cavities is examined. The second example
treats the interaction of irradiation-induced defects with nanocavities,
particularly preferential amorphisation at open volume defects and
subsequent cavity shrinkage. The final example illustrates the coalescence
of excess vacancies into small voids on annealing and the use of gettering
of Au to detect such open volume defects.