13 results
An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT
- Petros Beleniotis, Frank Schnieder, Sascha Krause, Sanaul Haque, Matthias Rudolph
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 14 / Issue 2 / March 2022
- Published online by Cambridge University Press:
- 20 October 2021, pp. 134-142
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Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance.
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
- Peng Luo, Frank Schnieder, Olof Bengtsson, Valeria Vadalà, Antonio Raffo, Wolfgang Heinrich, Matthias Rudolph
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 11 / Issue 2 / March 2019
- Published online by Cambridge University Press:
- 22 February 2019, pp. 121-129
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Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Contributors
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- By Tom Abbott, Gareth L. Ackland, Hollman D. Aya, Berthold Bein, Karim Bendjelid, Matthieu Biais, Elizabeth J. Bridges, Maxime Cannesson, Cédric Carrié, Alice Carter, Maurizio Cecconi, Daniel Chappell, Jason H. Chua, Gary Colins, Diego Orbegozo Cortes, Lester A. H. Critchley, Daniel De Backer, Katia Donadello, Eric Edison, Byron D. Fergerson, Tong J. Gan, Michael T. Ganter, Leslie M. Garson, Christoph K. Hofer, Christoph Ilies, James M. Isbell, Matthias Jacob, Mazyar Javidroozi, Zeev N. Kain, Elisa Kam, Gautam Kumar, Yannick Le Manach, Sheldon Magder, Aman Mahajan, Gerard R. Manecke, Paul E. Marik, Joseph Meltzer, Debra R. Metter, Timothy E. Miller, Xavier Monnet, Michael Mythen, Rudolph Nguyen, Rupert Pearse, Michael R. Pinsky, Davinder Ramsingh, Steffen Rex, Andrew Rhodes, Joseph Rinehart, Mathieu Sèrié, Aryeh Shander, Nils Siegenthaler, Ann B. Singleton, Faraz Syed, Jean-Louis Teboul, Robert H. Thiele, Shermeen B. Vakharia, Trung Vu, Nathan H. Waldron, David Walker, William Wilson
- Edited by Maxime Cannesson, University of California, Irvine, Rupert Pearse
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- Perioperative Hemodynamic Monitoring and Goal Directed Therapy
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- 05 September 2014
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- 04 September 2014, pp vii-x
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Small- and large-signal modeling of InP HBTs in transferred-substrate technology
- Tom K. Johansen, Matthias Rudolph, Thomas Jensen, Tomas Kraemer, Nils Weimann, Frank Schnieder, Viktor Krozer, Wolfgang Heinrich
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- International Journal of Microwave and Wireless Technologies / Volume 6 / Issue 3-4 / June 2014
- Published online by Cambridge University Press:
- 11 March 2014, pp. 243-251
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In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.
Preface
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Nonlinear Transistor Model Parameter Extraction Techniques
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- 25 October 2011
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- 13 October 2011, pp xiii-xiv
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Summary
Designing microwave circuits today means relying on numerical circuit simulation. While not a substitute for one's own skills, knowledge, and experience, a designer must be able to count on the adequacy of circuit simulation tools to accurately simulate the circuit performance. Circuit simulators themselves are generally up to the challenge. However, there is a perpetual quest for good transistor models to use with the simulator, because models are usually the limiting factor in the accuracy of a simulated design. This is due to the continuous evolution of transistor technology, requiring the models to keep up, and also to the increasing demands placed on the models to perform with respect to wider classes of signals, operating conditions (e.g., temperature), and statistical variation. Circuit designers therefore often face the challenge of adapting the models that are provided with simulators to better describe the actual transistor that is being used in the design. This is achieved by characterizing the transistor, mainly by measurement, but also by electromagnetic and/or thermal simulation. Finally, model parameter values must be extracted from this data before the model can be used at all in a design.
As transistor modeling is a key to circuit design, many publications are available on the models for any type of transistor, ranging from model documentation in simulator products, to application notes and scientific papers in technical conferences and journals; but it seems that much less is published on how the respective model parameters can be determined.
1 - Introduction
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- By Matthias Rudolph, Brandenburg University of Technology
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Nonlinear Transistor Model Parameter Extraction Techniques
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- 25 October 2011
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- 13 October 2011, pp 1-17
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Summary
If one is about to design a circuit, one certainly relies on a circuit simulation tool that provides us with the capability to determine circuit performance with high accuracy without even fabricating a prototype. We expect the simulation to provide us with the numerical algorithm that is capable of accurately calculating the relevant variables, such as currents, voltages, noise, distortion products, etc. At least as important is the description of the components that will be used, since ultimately the simulation can never be more accurate than the models of the components used. Component models commonly are provided as drag-and-drop components in modern circuit simulators. At least for established technologies, accurate models are available for passive and active components. All problems solved?
Unfortunately not. The models, especially compact transistor models, are parametrized. It is a big step from the general-purpose model that is capable of describing, say, SiGe heterojunction bipolar transistors (HBTs) in general to the specific model for a specific transistor of a specific size, from a specific foundry, that one plans to use in the actual design.
But why bother? One would expect the foundry selling the transistor also to provide us with a valid model.
In reality the situation is more like the following:
Some vendors simply do not provide their customers with appropriate models. Either one gets just plain data sheets providing some figures of merit and printed S-parameters. Or quite often, even for the most advanced transistors, only very basic SPICE-type model parameters are provided. While these models are available in literally all circuit simulators, their accuracy is often quite limited, since these models only describe the very basic transistor behavior.
[…]
Contents
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Book:
- Nonlinear Transistor Model Parameter Extraction Techniques
- Published online:
- 25 October 2011
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- 13 October 2011, pp vii-ix
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Frontmatter
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Nonlinear Transistor Model Parameter Extraction Techniques
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- 25 October 2011
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- 13 October 2011, pp i-vi
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6 - Large and packaged transistors
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- By Jens Engelmann, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Franz-Josef Schmückle, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Matthias Rudolph, Brandenburg University of Technology
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Book:
- Nonlinear Transistor Model Parameter Extraction Techniques
- Published online:
- 25 October 2011
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- 13 October 2011, pp 171-205
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Summary
Introduction
Microwave power transistors commonly internally consist of a number of smaller transistor cells combined together in order to reach the desired performance. The individual transistor cells are positioned side by side, sometimes repeated in two dimensions. But often, only one single line of parallel cells is used, since power splitting and combining is less challenging compared to other configurations. Relying on an array of small transistors instead of only one large power transistor allows higher power at high frequencies to be realized. Reaching high frequencies calls for small and fast transistors. Inherently, reducing the physical size of a transistor will reduce the power-handling capabilities. Increasing the size of a single transistor with just one emitter or drain connection, on the other hand, is no option in the microwave regime, since unequal current or heat distribution within the device will rapidly degrade performance. Proper combination of many small transistors within a package to get one power device is therefore the only option. In addition to the advantages regarding electrical behavior, thermal management of the power transistor can be significantly simplified.
Various configurations of transistors in packages have emerged in recent years. Common to most of these solutions is the arrangement in bars, as single or multiline (i.e., 2D). However, 2D configurations of bars restrict the power transistor to lower frequencies where line lengths in general (e.g., bondwires) are small compared to the wavelength.
List of contributors
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Book:
- Nonlinear Transistor Model Parameter Extraction Techniques
- Published online:
- 25 October 2011
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- 13 October 2011, pp x-xii
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Nonlinear Transistor Model Parameter Extraction Techniques
- Edited by Matthias Rudolph, Christian Fager, David E. Root
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- Published online:
- 25 October 2011
- Print publication:
- 13 October 2011
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Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Index
- Edited by Matthias Rudolph, Christian Fager, Chalmers University of Technology, Gothenberg, David E. Root
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- Book:
- Nonlinear Transistor Model Parameter Extraction Techniques
- Published online:
- 25 October 2011
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- 13 October 2011, pp 350-352
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