18 results
DESAlert: Enabling Real-Time Transient Follow-Up with Dark Energy Survey Data
- A. Poci, K. Kuehn, T. Abbott, F. B. Abdalla, S. Allam, A.H. Bauer, A. Benoit-Lévy, E. Bertin, D. Brooks, P. J. Brown, E. Buckley-Geer, D. L. Burke, A. Carnero Rosell, M. Carrasco Kind, R. Covarrubias, L. N. da Costa, C. B. D’Andrea, D. L. DePoy, S. Desai, J. P. Dietrich, C. E Cunha, T. F. Eifler, J. Estrada, A. E. Evrard, A. Fausti Neto, D. A. Finley, B. Flaugher, P. Fosalba, J. Frieman, D. Gerdes, D. Gruen, R. A. Gruendl, K. Honscheid, D. James, N. Kuropatkin, O. Lahav, T. S. Li, M. March, J. Marshall, K. W. Merritt, C.J. Miller, R. C. Nichol, B. Nord, R. Ogando, A. A. Plazas, A. K. Romer, A. Roodman, E. S. Rykoff, M. Sako, E. Sanchez, V. Scarpine, M. Schubnell, I. Sevilla, C. Smith, M. Soares-Santos, F. Sobreira, E. Suchyta, M. E. C. Swanson, G. Tarle, J. Thaler, R. C. Thomas, D. Tucker, A. R. Walker, W. Wester, (The DES Collaboration)
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- Journal:
- Publications of the Astronomical Society of Australia / Volume 33 / 2016
- Published online by Cambridge University Press:
- 30 September 2016, e049
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The Dark Energy Survey is undertaking an observational programme imaging 1/4 of the southern hemisphere sky with unprecedented photometric accuracy. In the process of observing millions of faint stars and galaxies to constrain the parameters of the dark energy equation of state, the Dark Energy Survey will obtain pre-discovery images of the regions surrounding an estimated 100 gamma-ray bursts over 5 yr. Once gamma-ray bursts are detected by, e.g., the Swift satellite, the DES data will be extremely useful for follow-up observations by the transient astronomy community. We describe a recently-commissioned suite of software that listens continuously for automated notices of gamma-ray burst activity, collates information from archival DES data, and disseminates relevant data products back to the community in near-real-time. Of particular importance are the opportunities that non-public DES data provide for relative photometry of the optical counterparts of gamma-ray bursts, as well as for identifying key characteristics (e.g., photometric redshifts) of potential gamma-ray burst host galaxies. We provide the functional details of the DESAlert software, and its data products, and we show sample results from the application of DESAlert to numerous previously detected gamma-ray bursts, including the possible identification of several heretofore unknown gamma-ray burst hosts.
Supporting the use of health technology assessments in policy making about health systems
- John N. Lavis, Michael G. Wilson, Jeremy M. Grimshaw, R. Brian Haynes, Mathieu Ouimet, Parminder Raina, Russell L. Gruen, Ian D. Graham
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- International Journal of Technology Assessment in Health Care / Volume 26 / Issue 4 / October 2010
- Published online by Cambridge University Press:
- 06 October 2010, pp. 405-414
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Objectives: The objective of this study is to profile the health technology assessments (HTAs) produced in Canada and other selected countries and assess their potential to inform policy making about health systems in jurisdictions other than the ones for which they were produced, and to develop and pilot test prototypes for packaging and assessing the relevance of HTAs for health system managers and policy makers.
Methods: We compiled an inventory of all HTAs that were produced by nine HTA agencies between September 2003 and August 2006; coded the title and abstract of each HTA according to the technologies assessed, methods used, and whether or not context-specific actionable messages were provided; developed a prototype for a structured, decision-relevant HTA summary and for a relevance-assessment form; and pilot-tested the prototypes using semistructured telephone interviews with a purposive sample of Canadian healthcare managers and policy makers.
Results: Our review of the 223 HTAs identified that: (i) 44 HTAs addressed health system arrangements (20 percent); (ii) 205 incorporated a systematic review (92 percent), whereas only 12 incorporated a sociopolitical assessment using explicit methods (5 percent); and (iii) 50 contained context-specific actionable messages (22 percent). Our interviews identified significant support for both the general idea of an HTA summary and the prototype's specific elements, but mixed views about using peer assessments of relevance.
Conclusions: Those involved in supporting the use of HTAs in policy making about health systems may wish to produce structured decision-relevant summaries for their systematic review-containing HTAs to increase the prospects for their HTAs being used outside the jurisdiction for which they were produced.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Diamond Nanowires: Insulator-Metal Transition in UltraNanoCrystalline Diamond Films
- R Arenal, P Bruno, D Miller, D Gruen
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- Microscopy and Microanalysis / Volume 13 / Issue S02 / August 2007
- Published online by Cambridge University Press:
- 05 August 2007, pp. 708-709
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- August 2007
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Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007
To Err Is Human. Eds. L. T. Kohn, J. M. Corrigan and M. S. Donaldson. National Academy Press Washington, D.C. 2000. Pp. 287. $34.95
- R. GRUEN
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- Epidemiology & Infection / Volume 126 / Issue 1 / February 2001
- Published online by Cambridge University Press:
- 09 April 2001, p. 157
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7 - Localization, allelic heterogeneity, and origins of the hemochromatosis gene
- from Part II - Genetics of hemochromatosis
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- By Ruma Raha-Chowdhury, Department of Pathology, Division of Immunology, University of Cambridge, UK, Jeffrey R. Gruen, Children's Hospital at Yale-New Haven, Connecticut, USA
- Edited by James C. Barton, Southern Iron Disorders Center, Alabama, Corwin Q. Edwards, University of Utah
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- Hemochromatosis
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- 05 August 2011
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- 13 January 2000, pp 75-90
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Summary
Introduction
Hemochromatosis is a common autosomal recessive disorder, with a prevalence varying from 1 in 2000 to 1 in 200 in several European populations. It is characterized by excessive iron absorption. Since the body has no effective way of ridding itself of the excess, the resulting iron accumulation eventually leads to organ damage. There is variable age of onset and clinical heterogeneity. Full expression of the disease is usually seen in men during the fourth or fifth decade of life. Symptoms in women generally do not develop until after the menopause, as iron losses associated with menstruation and childbirth often compensate for the enhanced iron absorption. Although hemochromatosis is generally considered a disease of adults, juvenile and childhood onset have been described as well. Neonatal hemochromatosis is a different disease that is unassociated with the inheritance of hemochromatosis.
Association with HLA antigens
Simon et al. described an association between the HLA antigens A3 and B14, and the hemochromatosis gene (HFE), localizing it to the major histocompatibility complex (MHC) on the short arm of chromosome 6 (6p21.3). This association with HLA class I antigens was confirmed by several investigators. Pedigree analysis placed the hemochromatosis gene within 1cM of HLA-A. Beyond the initial studies linking HLA and hemochromatosis, further progress in defining the critical region was slow because of the lack of informative chromosomal translocations and recombinants, and the lack of ordered polymorphic markers telomeric to HLA-A.
Fabrication of MEMS Components Based on Ultrananocrystalline Diamond Thin Films and Characterization of Mechanical Properties
- A. V. Sumant, O. Auciello, A. R. Krauss, D. M. Gruen, D. Ersoy, J. Tucek, A. Jayatissa, E. Stach, N. Moldovan, D. Mancini, H. G. Busmann, E. M. Meyer
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- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE5.33
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- 2000
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The mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of MEMS components. However, conventional CVD diamond deposition methods result in either a coarse-grained pure diamond structure that prevents high- resolution patterning, or in a fine-grained diamond film with a significant amount of intergranular non-diamond carbon. At Argonne National Laboratory, we are able to produce phase-pure ultrananocrystalline diamond (UNCD) films for the fabrication of MEMS components. UNCD is grown by microwave plasma CVD using C60-Ar or CH4-Ar plasmas, resulting in films that have 3-5 nm grain size, are 10-20 times smoother than conventionally grown diamond films, and can have mechanical properties similar to that of single crystal diamond. We used lithographic patterning, lift-off, and etching, in conjunction with the capability for growing UNCD on SiO2 to fabricate 2-D and 3-D UNCD-MEMS structures. We have performed initial characterization of mechanical properties by using nanoindentation and in-situ TEM indentor techniques. The values of Hardness (∼88 GPa) and Young's modulus (∼ 864 GPa) measured are very close to those of single crystal diamond (100 GPa and 1000 GPa respectively). The results show that UNCD is a promising material for future high performance MEMS devices.
In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques
- V.S. Smentkowskiv, A. R. Krauss, O. Auciello, J. Im, D.M. Gruen, J. Holecek, K. Waters, J. A. Schultz
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- MRS Online Proceedings Library Archive / Volume 569 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 3
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- 1999
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Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.
The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.
Low Temperature Growth of Ultra-Nanocrystalline Diamond on Glass Substrates for Field Emission Applications
- T. D. Corrigan, A. R. Krauss, D. M. Gruen, O. Auciello, R. P. H. Chang
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- Journal:
- MRS Online Proceedings Library Archive / Volume 593 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 233
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- 1999
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Recent studies of field emission from diamond have focused on the feasibility of growing diamond films on glass substrates, which are the preferred choice for cost-effective, large area flat panel displays. However, diamond growth on glass requires temperatures < 500 °C, which is much lower than the temperature needed for growing conventional microwave plasma chemical vapor deposition (CVD) diamond films. In addition, it is desirable to minimize the deposition time for cost-effective processing. We have grown ultrananocrystalline diamond (UNCD) films using a unique microwave plasma technique that involves CH4-Ar gas mixtures, as opposed to the conventional CH4-H2 plasma CVD method. The growth species in the CH4-Ar CVD method are C2 dimers, resulting in lower activation energies and consequently the ability to grow diamond at lower temperatures than conventional CVD diamond processes. For the work discussed here, the UNCD films were grown with plasma-enhanced chemical vapor deposition (PECVD) at low temperatures on glass substrates coated with Ti thin films. The turn-on field was as low as 3 V/μm for a film grown at 500 °C with a gas chemistry of l%CH4/99%Ar at 100 Torr, and 7 V/μm for a film grown at 350 °C. UV Raman spectroscopy revealed the presence of high quality diamond in the films.
Studies of Metallic Species Incorporation During Growth of SrBi2Ta2O9 Films on YBa2Cu3O7−x Substrates Using Mass Spectroscopy of Recoiled Ions
- A.M. Dhote, A.R. Krauss, O. Auciello, J. Im, D.M. Gruen, R. Ramesh, S.P. Pai, T. Venkatesan
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- MRS Online Proceedings Library Archive / Volume 541 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 281
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- 1998
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The incorporation of metallic species (Bi, Sr and Ta) during the growth of layered perovskite SrBi2Ta2O9 (SBT) on a-axis oriented YBa2Cu3O7−x (YBCO) conducting oxide substrates has been investigated using in situ low energy mass spectroscopy of recoiled ions (MSRI). This technique is capable of providing monolayer-specific surface information relevant to the growth of single and multi-component thin films and layered heterostructures. The data show a temperature dependence of metallic species incorporation during co-deposition of Sr, Bi and Ta on YBCO surfaces. At high temperatures (400 < T ≤ 700°C), negligible incorporation of Bi is observed as compared to Ta and Sr. At low temperatures (≤ 400°C), there is a substantial incorporation of Bi, Sr and Ta on the surface of YBCO, and the MSRI signal intensities for Sr, Bi and Ta are nearly independent of substrate temperature. According to thermodynamic calculations, the presence of Ba and Y on the YBCO surface inhibit the incorporation of Bi due to competition for oxygen required to establish bonding of metallic species to the surface. This may be the explanation for the observed Bi deficiency in films grown on YBCO surfaces at temperatures > 400°C. SBT films grown at temperatures ≤ 400°C and annealed in oxygen or air at 800°C exhibit a polycrystalline structure with partial a-axis orientation.
Electron Emission Properties of Si Field Emitter Arrays Coated With Nanocrystalline Diamond From Fullerene Precursors
- T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, R.P.H. Chang, S. English, R. J. Nemanich
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- MRS Online Proceedings Library Archive / Volume 498 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 227
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- 1997
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In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.
Spectroscopic Determination of C2 Densities in AR/H 2/CH 4 and AR/H2/C60 Microwave Plasmas For Nanocrystalline Diamond Synthesis
- A. N. Goyette, J. E. Lawler, L. W. Anderson, D. M. Gruen, T. G. Mccauley, D. Zhou, A. R. Krauss
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- MRS Online Proceedings Library Archive / Volume 502 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 275
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- 1997
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We have measured the steady state concentration of gas phase C2 in Ar/H2/CH4 and Ar/H2/C60 microwave plasmas used for the deposition of nanocrystalline diamond films. High sensitivity white light absorption spectroscopy is used to monitor the C2 density using the d 3 Π ← a3Π (0,0) vibrational band of C2 as chamber pressure, microwave power, substrate temperature and feed gas mixtures are varied in both chemistries. Understanding how these parameters influence the C2 density in the plasma volume provides insight into discharge mechanisms relevant to the deposition of nanocrystalline diamond.
Morphology and Electron Emission Properties of Nanocrystalline CVD Diamond Thin Films
- Alan R. Krauss, Dieter M. Gruen, Daniel Zhou, Thomas G. Mccauley, Lu Chang Qin, Timothy Corrigan, Orlando Auciello, R. P. H. Chang
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- MRS Online Proceedings Library Archive / Volume 495 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 299
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- 1997
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Nanocrystalline diamond thin films have been produced by microwave plasma-enhanced chemical vapor deposition (MPECVD) using C60/Ar/H2 or CH4/Ar/H2 plasmas. Films grown with H2 concentration ≤ 20% are nanocrystalline, with atomically abrupt grain boundaries and without observable graphitic or amorphous carbon phases. The growth and morphology of these films are controlled via a high nucleation rate resulting from low hydrogen concentration in the plasma. Initial growth is in the form of diamond, which is the thermodynamic equilibrium phase for grains < 5 nm in diameter. Once formed, the diamond phase persists for grains up to at least 15–20 nm in diameter. The renucleation rate in the near-absence of atomic hydrogen is very high (∼1010 cm2sec−1), limiting the average grain size to a nearly constant value as the film thickness increases, although the average grain size increases as hydrogen is added to the plasma. For hydrogen concentrations less than ∼20%, the growth species is believed to be the carbon dimer, C2, rather than the CH3* growth species associated with diamond film growth at higher hydrogen concentrations. For very thin films grown from the C60 precursor, the threshold field (2 to ∼60 volts/micron) for cold cathode electron emission depends on the electrical conductivity and on the surface topography, which in turn depends on the hydrogen concentration in the plasma. A model of electron emission, based on quantum well effects at the grain boundaries is presented. This model predicts promotion of the electrons at the grain boundary to the conduction band of diamond for a grain boundary width ∼3–4 Å, a value within the range observed by TEM.
Characterization of Diamond Thin Films by Core-Level Photoabsorption and UV Excitation Raman Spectroscopy
- C. D. Zuiker, A. R. Krauss, D. M. Gruen, J. A. Carlisle, L. J. Terminello, S. A. Asher, R. W. Bormett
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- MRS Online Proceedings Library Archive / Volume 437 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 211
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- 1996
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Near-edge x-ray absorption fine structure (NEXAFS) and Raman spectroscopies have been used to characterize both nanocrystalline and faceted, microcrystalline diamond thin films grown by microwave plasma chemical vapor deposition under a variety of conditions. Raman spectroscopy is perhaps the most commonly used method of characterizing diamond film quality, whereas photoabsorption requires a synchrotron radiation source and is much less commonly used. Both methods characterize the sp2 (graphitic) /sp3 (diamond) electronic bonding character of the films, but Raman spectroscopy is considerably more sensitive to sp2 than sp3 bonded carbon. For nanocrystalline diamond, the use of a visible excitation source for Raman spectroscopy also gives rise to an intense fluorescence band which may completely mask the sp3 Raman line, even in films with negligible (<1%) sp2 bonding character. Near-edge x-ray absorption fine structure (NEXAFS) is a more localized measurement of the electronic bonding character, and does not have as large a variation in sensitivity between sp2 and sp3 phases.
Raman spectra measured using 632.8 nm light exhibit a sharp diamond phonon peak at 1332 cm−1 for faceted, large grain diamond films, and no obvious diamond phonon peak for the nanocrystalline diamond films. However, Raman spectra excited by 228.9 nm light exhibit a sharp diamond phonon peak for both nanocrystalline and large grain, faceted diamond films. The UV Raman results are consistent with the C(ls) NEXAFS measurements which show clear bulk diamond excitonic and sp3 features, with little evidence of sp2 character for all of the tested films. We conclude that the use of visible excitation Raman spectroscopy as the sole criterion for the assessment of quality in nanocrystalline diamond films is misleading, but that UV Raman spectroscopy and NEXAFS provide a consistent and reliable characterization. Nanocrystalline films grown using a fullerene precursor in an Ar microwave plasma with very low levels of hydrogen (2%) are found by both of the latter methods to consist almost entirely of sp3-bonded carbon with ˜2% non-tetrahedral bonding.
Laser-Reflectance Interferometry Measurements of Diamond-Film Growth
- Christopher D. Zuiker, Dieter M. Gruen, Alan R. Krauss
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- MRS Bulletin / Volume 20 / Issue 5 / May 1995
- Published online by Cambridge University Press:
- 29 November 2013, pp. 29-31
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- May 1995
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The remarkable properties of diamond, including its hardness, chemical inertness, high thermal conductivity, low coefficient of friction, optical transparency, and semiconducting properties, have led to considerable research in the area of diamond thin-film deposition. Diamond films have been characterized ex situ by a large number of diagnostic techniques including Raman spectroscopy, x-ray diffraction, SEM, and TEM. In situ diagnostics, which can provide information in real time as the film is growing, are less common.
Laser-reflectance interferometry (LRI) has been used to monitor the growth of diamond films in situ. The technique involves measuring the intensity of a laser beam reflected from the substrate surface on which the film is growing. The reflected beam is the sum of beams reflected by the gas-diamond interface and the diamond-silicon interface. Oscillations in the reflectivity are observed as the film grows because of interference between the reflected beams. Each oscillation indicates an increase in film thickness of λ/2n, where λ is the laser wavelength and n is the index of refraction of the film. If the index of refraction of the film is known, the thickness and growth rate can be determined in situ. For LRI measurements with 632.8-nm-wavelength HeNe lasers, the index of refraction of diamond films has been found to be within 10% of the bulk diamond value of 2.4. Each oscillation therefore indicates an increase in film thickness of 0.13 μm.
The reflectivity measured by LRI is also affected by scattering because of surface roughness.
Tem Study of Diamond Films Grown from Fullerene Precursors
- R. Csencsitsi, D. M. Gruen, A. R. Krauss, C. Zuiker
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- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 291
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- 1995
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Transmission Electron Microscope (TEM) techniques are applied to study the microstructure of diamond films grown from fullerene precursors. Electron diffraction and electron energy loss spectra (EELS) collected from the diamond films correspond to that of bulk diamond. Microdiffraction, high resolution images and EELS help determine that the first diamond grains that nucleate from fullerene precursors generally form on a thin amorphous carbon nterlayer and seldom directly on the silicon substrate. Grain size measurements reveal nanocrystalline diamond grains. Cross section TEM images show that the nanocrystalline diamond grains are equiaxed and not columnar nor dendritic. The microstructure of small equiaxed grains throughout the film thickness is believed responsible for the very smooth surfaces of diamond films grown from fullerene precursors.
In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique
- Orlando Auciello, A. R. Krauss, Y. Lin, R. P. H. Chang, D. M. Gruen
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- MRS Online Proceedings Library Archive / Volume 341 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 385
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- 1994
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A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
Spectrometric Characterization of Purified C60 and C70
- Keith R. Lykke, Michael J. Pellin, Peter Wurz, Dieter M. Gruen, Jerry E. Hunt, Michael R. Wasielewski
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- MRS Online Proceedings Library Archive / Volume 206 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 679
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- 1990
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C60 and C70 were synthesized and purified according to published procedures. Both nanosecond and picosecond laser desorption from coated substrates gave copious positive and negative ions. Mass spectra (TOF and FTMS) with excellent signal to noise, showing only the C60 and C70 mass peaks, have been observed. Well-resolved isotopic structure was seen in the FTMS spectra in agreement with the natural abundance of carbon. Laser desorption and multiphoton ionization/photodissociation of the neutral species, as well as electronic absorption, FTIR, and fluorescence spectra, have been obtained.