24 results
Parental concerns during COVID-19-related school closures: children’s behaviors and media usage
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- European Psychiatry / Volume 65 / Issue S1 / June 2022
- Published online by Cambridge University Press:
- 01 September 2022, p. S141
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Harm Avoidance as an Endophenotype of Schizophrenia: Comparative Study of First-degree Relatives, Schizophrenia Probands, and Healthy Controls
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- European Psychiatry / Volume 24 / Issue S1 / January 2009
- Published online by Cambridge University Press:
- 16 April 2020, 24-E1199
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2190 – Effect Of Major Depressive Disorder And Insomnia On Somatization
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- European Psychiatry / Volume 28 / Issue S1 / 2013
- Published online by Cambridge University Press:
- 15 April 2020, 28-E1352
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The Effects of High Exposure to Smartphone from Ages 3 to 5 Years on Children's Behaviors
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- European Psychiatry / Volume 41 / Issue S1 / April 2017
- Published online by Cambridge University Press:
- 23 March 2020, p. S214
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Atomic Structure of Y2O3:Eu/LaA1O3 Interfaces
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- Microscopy and Microanalysis / Volume 6 / Issue S2 / August 2000
- Published online by Cambridge University Press:
- 02 July 2020, pp. 1058-1059
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- August 2000
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Processing And Device Performance Of GaN Power Rectifiers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 838-844
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- 2000
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Dry Etching of MRAM Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 614 / 2000
- Published online by Cambridge University Press:
- 14 March 2011, F10.2.1
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- 2000
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GaN pnp Bipolar Junction Transistors Operated to 250°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.2.1
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- 2000
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Device Processing for GaN High Power Electronics
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
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- 15 March 2011, T7.1.1
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- 2000
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 831-837
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- 2000
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p-GaAs Base Regrowth for GaN HBTs and BJTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T6.13.1
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- 2000
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Properties and Effects of Hydrogen in GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 540-550
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- 2000
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Relationship Between Structure and Luminescent Properties of Epitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates
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- MRS Online Proceedings Library Archive / Volume 589 / 1999
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- 10 February 2011, 203
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- 1999
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 763-768
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- 1999
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Microstructure and Electrical Characteristics of La1−xSrxMnO3 (0.19≤x≤0.31) Thin Films Prepared by Sputter Techniques
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- Journal:
- MRS Online Proceedings Library Archive / Volume 602 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 93
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- 1999
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Photoelectrochemical Etching of InxGa1−xN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 691-696
- Print publication:
- 1999
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Processing and Device Performance of GaN Power Rectifiers
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.67
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- 1999
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.66
- Print publication:
- 1999
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Properties and Effects of Hydrogen in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W10.6
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- 1999
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300°C GaN/AlGaN Heterojunction Bipolar Transistor
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e41
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- 1998
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