15 results
The Effects of High Exposure to Smartphone from Ages 3 to 5 Years on Children's Behaviors
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- Journal:
- European Psychiatry / Volume 41 / Issue S1 / April 2017
- Published online by Cambridge University Press:
- 23 March 2020, p. S214
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Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.11
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- 2004
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 763-768
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- 1999
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Photoelectrochemical Etching of InxGa1−xN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 691-696
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- 1999
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Photoelectrochemical Etching of InxGal-xN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.40
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- 1998
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.56
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- 1998
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New plasma chemistries for etching GaN and InN: BI3 and BBr3
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e5
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- 1998
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Minimax theorems in probabilistic metric spaces
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- Journal:
- Bulletin of the Australian Mathematical Society / Volume 51 / Issue 1 / February 1995
- Published online by Cambridge University Press:
- 17 April 2009, pp. 103-119
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- February 1995
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Minority Carrier Diffusion Lengths And Photoconductivity In a-Si,N:H Deposited By Remote Pecvd
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- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 529
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- 1994
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New Model for Local H-Atom Bonding Re-Arrangements Associated with the Staebler-Wronski Effect in a-Si:H and a-Si:H-Based Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 275
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- 1994
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Ambipolar Diffusion Lengths, Lamb, and Steady-State Photoconductivity, σph, in B2H6 Doped Μc-Si
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- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 583
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- 1994
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Nitrogen: Not a Dopant in Crystalline Si (C-Si), But an N-Type Dopant in A-Si:H, Why?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 637
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- 1994
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Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering
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- MRS Online Proceedings Library Archive / Volume 358 / 1994
- Published online by Cambridge University Press:
- 28 February 2011, 781
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- 1994
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Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells
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- MRS Online Proceedings Library Archive / Volume 297 / 1993
- Published online by Cambridge University Press:
- 01 January 1993, 759
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- 1993
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Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 258 / 1992
- Published online by Cambridge University Press:
- 21 February 2011, 583
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- 1992
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