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Mixed infections with Opisthorchis viverrini and intestinal flukes in residents of Vientiane Municipality and Saravane Province in Laos
- J.-Y. Chai, J.-H. Park, E.-T. Han, S.-M. Guk, E.-H. Shin, A. Lin, J.-L. Kim, W.-M. Sohn, T.-S. Yong, K.S. Eom, D.-Y. Min, E.-H. Hwang, B. Phommmasack, B. Insisiengmay, H.-J. Rim
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- Journal:
- Journal of Helminthology / Volume 79 / Issue 3 / September 2005
- Published online by Cambridge University Press:
- 12 April 2024, pp. 283-289
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Faecal examinations for helminth eggs were performed on 1869 people from two riverside localities, Vientiane Municipality and Saravane Province, along the Mekong River, Laos. To obtain adult flukes, 42 people positive for small trematode eggs (Opisthorchis viverrini, heterophyid, or lecithodendriid eggs) were treated with a 20–30 mg kg−1 single dose of praziquantel and purged. Diarrhoeic stools were then collected from 36 people (18 in each area) and searched for helminth parasites using stereomicroscopes. Faecal examinations revealed positive rates for small trematode eggs of 53.3% and 70.8% (average 65.2%) in Vientiane and Saravane Province, respectively. Infections with O. viverrini and six species of intestinal flukes were found, namely, Haplorchis taichui, H. pumilio, H. yokogawai, Centrocestus caninus, Prosthodendrium molenkampi, and Phaneropsolus bonnei. The total number of flukes collected and the proportion of fluke species recovered were markedly different in the two localities; in Vientiane, 1041 O. viverrini (57.8 per person) and 615 others (34.2 per person), whereas in Saravane, 395 O. viverrini (21.9 per person) and 155207 others (8622.6 per person). Five people from Saravane harboured no O. viverrini but numerous heterophyid and/or lecithodendriid flukes. The results indicate that O. viverrini and several species of heterophyid and lecithodendriid flukes are endemic in these two riverside localities, and suggest that the intensity of infection and the relative proportion of fluke species vary by locality along the Mekong River basin.
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. 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Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Elevation of the index of left ventricular mass during the acute and subacute phase of Kawasaki disease, and its association with indexes of diastolic function
- Jeong J. Yu, Byung O. Kwak, You H. Jeon, Yong-Mean Park, Ran Lee, Sochung Chung, Sun H. Bae, Bok Y. Pyun
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- Journal:
- Cardiology in the Young / Volume 19 / Issue 1 / February 2009
- Published online by Cambridge University Press:
- 02 December 2008, pp. 64-69
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Our aim was to determine whether the index of left ventricular mass increases during the acute and subacute phase of Kawasaki disease, and to investigate any relationship between this index and clinical and echocardiographic variables. We performed, therefore, a retrospective study of 66 children with Kawasaki disease, having a mean age of 2.85 years, comparing the findings with those obtained from 57 normal controls, having a mean age of 2.99 years. The data from the patients used for comparison was obtained during the acute and subacute phase of the illness, as well as during the phase of convalescence. We performed correlation analysis of the findings during the acute and subacute phase, determining the relationship between the index of left ventricular mass and other variables. The index was higher (p = 0.0461), and the velocity of propagation of left ventricular early diastolic flow was lower (p < 0.0001), during the acute and subacute phase when compared to control values. The index then reduced (p = 0.0001) during the phase of convalescent when compared to the acute and subacute phase. Levels of albumin in the serum (p = 0.0193), peak E velocity (p = 0.0479), and velocity of propagation (p = 0.0360) were found to be related to the index of left ventricular mass. Significant relationships were found between the differences in this index and differences in body weight when findings during the acute and subacute phase were compared to those of the phase of convalescence. The index of left ventricular mass, therefore, is increased during the acute and subacute phase of Kawasaki disease, and is associated with altered diastolic indexes. This elevation may be due to generalized myocardial swelling from acute inflammation and increased vascular permeability. Measuring this index as a potential predictor of diastolic function should be added to studies of cardiac function during the acute and subacute phase of Kawasaki disease.
Cobalt Silicidation on Sub 100nm Hole Patterned Vertical Diode Formed by Silicon Epitaxial Growth and Its Electrical Properties
- Min Yong Lee, K. B. Lee, H. S. Lee, S. J. Chae, I. K. Han, H. S. Kang, S. W. Park
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1079 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1079-N08-06
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- 2008
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Self-aligned Cobalt silicide as ohmic contact layer on sub 100 nm hole patterned Si vertical diode formed by silicon epitaxial growth (SEG) is investigated and silicon epitaxial growth of higher than 4000 Å thickness and good crystalinity for PN diode has been successfully developed. Also, electrical isolation of 100 nm pitch size between diode and diode, and removal of unreacted Co/Ti/TiN layer have been realized by dip-out process without CMP simultaneously. Through the mechanism of void formation due to the variation of Si consumption rate during silicidation at limited hole pattern dimension, critical Co and Capping Ti thickness are investigated as various hole dimensions (80∼120 nm), and then with p+ type dopant species (49BF2, 11B). The ratio of Co thickness to hole dimension demonstrates void free cobalt silcidation on various pattern sizes of silicon epitaxial growth. Silicon epitaxial growing PN diodes including void free CoSi2 show excellent electrical performance, especially lower than 10 pA reverse off leakage current.
The dot size effect of amorphous silicon quantum dot on 1.54-μmErluminescence
- Nae-Man Park, Tae-Youb Kim, Gun Yong Sung, Baek-Hyun Kim, Seong-Ju Park, Kwan Sik Cho, Jung H. Shin, Jung-Kun Lee, Michael Nastasi
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- Journal:
- MRS Online Proceedings Library Archive / Volume 817 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, L1.4
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- 2004
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The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.
Mechanism of Quality Factor Compensation by Nb2O5 Addition for Dielectric Properties of Low-T Sintered ZST Microwave Ceramics
- Yong H. Park, Moo Y. Shin, Hyung H. Kim, Kyung H. Ko
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- Journal:
- MRS Online Proceedings Library Archive / Volume 658 / 2000
- Published online by Cambridge University Press:
- 18 March 2011, GG3.14
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- 2000
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It has been known that some additives such as Nb2O5 are efficient quality factor compensators to potential additives for low-T sintering of (Zr0.8Sn0.2)TiO4such asZnO. The compensation mechanism of Nb2O5was analyzed in the light of its effects on the Zn incorporation in grains. ZST ceramics were prepared by conventional mixed oxide method and their microwave dielectric properties including quality factor, permittivity and temperature coefficient frequency (TCF) were measured at X-band. After sintering at 1350 and 1400oC, samples were post-annealed at 900∼1100oC. It was found that as Nb2O5 was added, the quality factor of 6 mol % ZnO-ZST specimens increased from 24000 to 44000 without any sacrificing of other dielectric properties such as permittivity and TCF. According to TEM and XRD, Nb addition tends to enhance Zn diffusion toward grain boundaries while Nb moved in the opposite direction. Due to the fact that no second phases were formed, it was assumed that the redistribution of Zn and Nb could play a major role in the enhancement mechanism of quality factor. Post-annealing can also be a secondary booster for the quality factor of ZST. After annealing at 900∼1100oC, the quality factor of a specimen with additives, increased again up to 48000 due to further decrease of oxygen vacancies resulting from further out-diffusion of Zn toward grain boundaries and incorporation of Nb into the grain.
The Control of Zn for ZST Microwave Ceramics With Low Sintering Temperature
- Yong H. Park, Moo Y. Shin, Ji M. Ryu, Kyung H. Ko
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- Journal:
- MRS Online Proceedings Library Archive / Volume 606 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 292
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- 1999
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ZnO addition for low-T sintering of ZST has serious side effects such as decrease of Q × f value. In this work, the curing of these side effects without any further chemical additivesand causing degradation of other dielectric properties have been presented. After sintered at 1350°C for 2h. samples were annealed in oxygen at 900 ∼ 1100°C for 5hr. It was observed that Q × f value of post-annealed sample at 900°C could recovered up to 46000 from the as-sintered value of 40000. Because there were no formations of second phases or significant changes inlattice constants, which could affect microwave properties of ZST. However, it was found that only for the specimens annealed at 900°C, Zn was almost depleted from grin inside and diffused toward grain boundary. So, it is suggested that the out-diffusion of Zn is responsible for the recovery of Q × f value. Moreover, when the amount of Zn incorporation increased via successive calcination and sintering of pre-mixed powder of ZST and ZnO, Q × f value of 33000 also could enhanced up to 39000 due to the redistribution of Zn near grain boundary by out-diffusion.
Lateral Transport through Self-Assembled InAs Quantum Dots Located in the Narrow Gap Electrodes
- S. K. Jung, S. W. Hwang, J. H. Park, B. D. Min, E. K. Kim, Yong Kim
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- Journal:
- MRS Online Proceedings Library Archive / Volume 571 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 209
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- 1999
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We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-0D resonant tunneling through the single quantum dot positioned in between the electrodes.
Precursor pathway to superconducting HgBa2(Ca0.86Sr0.14)2Cu3O8+δ with a Tc of 132 K
- Nam H. Hur, Nae H. Kim, Yong K. Park, Jong C. Park
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- Journal:
- Journal of Materials Research / Volume 10 / Issue 12 / December 1995
- Published online by Cambridge University Press:
- 03 March 2011, pp. 2985-2987
- Print publication:
- December 1995
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Polycrystalline samples of HgBa2(Ca0.86Sr0.14)2Cu3O8+δ (denoted as Hg-1223) were prepared by a precursor route, which involves the reaction between HgO and two precursors: Ba2CuO3+x and Ca0.14CuO2. X-ray powder diffraction analysis revealed that the Hg-1223 is isostructural with pristine HgBa2Ca2Cu3O8−δ and TlBa2Ca2Cu3O9−δ. The Hg-1223 has tetragonal symmetry with space group P4/mmm, and lattice parameters a = 3.8648(2) Å and c = 16.0319(2) Å. The as-synthesized Hg-1223 sample has a Tc of about 126 K. After annealing in an oxygen atmosphere at 280 °C for 10 h, the Tc increased to 132 K. Using this precursor pathway, Hg-1223 samples can be reproducibly synthesized.
Effect of substrates on the growth and properties of LiNbO3 films by the sol-gel method
- Nam H. Hur, Yong K. Park, Dong H. Won, Kwangsoo No
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- Journal:
- Journal of Materials Research / Volume 9 / Issue 4 / April 1994
- Published online by Cambridge University Press:
- 03 March 2011, pp. 980-985
- Print publication:
- April 1994
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Thin films of LiNbO3 were fabricated on sapphire(012), MgO(OOl), and Si(111) substrates by the sol-gel process. Under optimized conditions, films deposited onto sapphire(012) were epitaxially grown. Preferred orientations, however, were not observed in the films on MgO(001) and Si(111) by x-ray diffraction measurements. Morphology of the epitaxial films on sapphire(012) was examined by scanning electron microscopy, which indicated that the films were smooth and had a pore-free surface. Electrical and optical measurements on the epitaxial films revealed that the properties of the films were very similar to those of the single crystalline LiNbO3, while films deposited onto Si(111) did not show any orientational behaviors. The highest quality films with epitaxy were obtained only on sapphire(012). The remaining substrates appeared to be not suitable for growing epitaxial LiNbO3 films by the sol-gel method.
Effects of Ultraviolet Radiation on the Characteristics of Hydrogenated Amorphous Silicon Thin Film Transistors
- Seong K. Lee, Jin S. Park, Yong S. Kim, Jung R. Hwang, Chang H. Oh, Min K. Han
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- Journal:
- MRS Online Proceedings Library Archive / Volume 258 / 1992
- Published online by Cambridge University Press:
- 21 February 2011, 967
- Print publication:
- 1992
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The experimental results regarding to the effects of ultraviolet (UV) light illumination on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) have been presented. The device parameters of a-Si:H TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by electrical stress and visible light illumination, but substantially improved by UV radiation. This may be attributed to an annealing effect on the dangling-bond defects, involving a number of phonons generated by absorption of high energy UV photons in the a-Si:H TFT channel. It has been also observed that the off-current of a-Si:H TFT decreases remarkably while the on-current changes very little. From the experimental results, we report that the improved on/off current ratio of a-Si:H TFT may be achieved by UV radiation.
A New Device Model of Amorphous Silicon Thin-Film Transistor for Circuit Simulation
- Hong S. Choi, Jin S. Park, Chang H. Oh, In S. Joo, Yong S. Kim, Min K. Han, Yearn I. Choi, Jung G. Yun, Won K. Park, Woo Y. Kim
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- Journal:
- MRS Online Proceedings Library Archive / Volume 219 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 351
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- 1991
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We present a new analytical model of amorphous silicon thin-film transistor (a-Si TFT) suitable for circuit simulators such as SPICE. The effects of localized gap state distributions of a-Si as well as temperatures on the a-Si TFT performances have been fully considered in the presented model. The parameters used in SPICE, such as transconductance, channel-length modulation, and power factor of source-drain current, are evaluated from the measured current-voltage and capacitance-voltage characteristics by employing the proposed extraction method. It has been found out that the analytical model is in good agreement with experimental data at both room temperature and elevated temperature and successfully implemented in a widely used circuit simulator.