6 results
In-situ transmission electron microscopy studies of the crystallization of N-doped Ge-rich GeSbTe materials
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- Journal:
- MRS Communications / Volume 8 / Issue 3 / September 2018
- Published online by Cambridge University Press:
- 22 August 2018, pp. 1145-1152
- Print publication:
- September 2018
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Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1070 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1070-E01-02
- Print publication:
- 2008
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Strain measurements in s-Si/SiGe nanostructures by quantitative high-resolution electron microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1026 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1026-C20-04
- Print publication:
- 2007
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Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.7
- Print publication:
- 2002
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On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B11.6
- Print publication:
- 2000
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Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion
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- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 163
- Print publication:
- 1999
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