17 results
DESAlert: Enabling Real-Time Transient Follow-Up with Dark Energy Survey Data
- A. Poci, K. Kuehn, T. Abbott, F. B. Abdalla, S. Allam, A.H. Bauer, A. Benoit-Lévy, E. Bertin, D. Brooks, P. J. Brown, E. Buckley-Geer, D. L. Burke, A. Carnero Rosell, M. Carrasco Kind, R. Covarrubias, L. N. da Costa, C. B. D’Andrea, D. L. DePoy, S. Desai, J. P. Dietrich, C. E Cunha, T. F. Eifler, J. Estrada, A. E. Evrard, A. Fausti Neto, D. A. Finley, B. Flaugher, P. Fosalba, J. Frieman, D. Gerdes, D. Gruen, R. A. Gruendl, K. Honscheid, D. James, N. Kuropatkin, O. Lahav, T. S. Li, M. March, J. Marshall, K. W. Merritt, C.J. Miller, R. C. Nichol, B. Nord, R. Ogando, A. A. Plazas, A. K. Romer, A. Roodman, E. S. Rykoff, M. Sako, E. Sanchez, V. Scarpine, M. Schubnell, I. Sevilla, C. Smith, M. Soares-Santos, F. Sobreira, E. Suchyta, M. E. C. Swanson, G. Tarle, J. Thaler, R. C. Thomas, D. Tucker, A. R. Walker, W. Wester, (The DES Collaboration)
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- Journal:
- Publications of the Astronomical Society of Australia / Volume 33 / 2016
- Published online by Cambridge University Press:
- 30 September 2016, e049
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The Dark Energy Survey is undertaking an observational programme imaging 1/4 of the southern hemisphere sky with unprecedented photometric accuracy. In the process of observing millions of faint stars and galaxies to constrain the parameters of the dark energy equation of state, the Dark Energy Survey will obtain pre-discovery images of the regions surrounding an estimated 100 gamma-ray bursts over 5 yr. Once gamma-ray bursts are detected by, e.g., the Swift satellite, the DES data will be extremely useful for follow-up observations by the transient astronomy community. We describe a recently-commissioned suite of software that listens continuously for automated notices of gamma-ray burst activity, collates information from archival DES data, and disseminates relevant data products back to the community in near-real-time. Of particular importance are the opportunities that non-public DES data provide for relative photometry of the optical counterparts of gamma-ray bursts, as well as for identifying key characteristics (e.g., photometric redshifts) of potential gamma-ray burst host galaxies. We provide the functional details of the DESAlert software, and its data products, and we show sample results from the application of DESAlert to numerous previously detected gamma-ray bursts, including the possible identification of several heretofore unknown gamma-ray burst hosts.
Supporting the use of health technology assessments in policy making about health systems
- John N. Lavis, Michael G. Wilson, Jeremy M. Grimshaw, R. Brian Haynes, Mathieu Ouimet, Parminder Raina, Russell L. Gruen, Ian D. Graham
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- Journal:
- International Journal of Technology Assessment in Health Care / Volume 26 / Issue 4 / October 2010
- Published online by Cambridge University Press:
- 06 October 2010, pp. 405-414
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Objectives: The objective of this study is to profile the health technology assessments (HTAs) produced in Canada and other selected countries and assess their potential to inform policy making about health systems in jurisdictions other than the ones for which they were produced, and to develop and pilot test prototypes for packaging and assessing the relevance of HTAs for health system managers and policy makers.
Methods: We compiled an inventory of all HTAs that were produced by nine HTA agencies between September 2003 and August 2006; coded the title and abstract of each HTA according to the technologies assessed, methods used, and whether or not context-specific actionable messages were provided; developed a prototype for a structured, decision-relevant HTA summary and for a relevance-assessment form; and pilot-tested the prototypes using semistructured telephone interviews with a purposive sample of Canadian healthcare managers and policy makers.
Results: Our review of the 223 HTAs identified that: (i) 44 HTAs addressed health system arrangements (20 percent); (ii) 205 incorporated a systematic review (92 percent), whereas only 12 incorporated a sociopolitical assessment using explicit methods (5 percent); and (iii) 50 contained context-specific actionable messages (22 percent). Our interviews identified significant support for both the general idea of an HTA summary and the prototype's specific elements, but mixed views about using peer assessments of relevance.
Conclusions: Those involved in supporting the use of HTAs in policy making about health systems may wish to produce structured decision-relevant summaries for their systematic review-containing HTAs to increase the prospects for their HTAs being used outside the jurisdiction for which they were produced.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Ultrananocrystalline Diamond-Biomolecular Composites: Towards BioMEMS
- N. M. Haralampus Grynaviski, O. Auciello, J. A. Carlisle, J. E. Gerbi, D. M. Gruen, J. F. Moore, A. Zinovev, M. A. Firestone
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- MRS Online Proceedings Library Archive / Volume 773 / 2003
- Published online by Cambridge University Press:
- 15 February 2011, N11.4
- Print publication:
- 2003
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The surface functionalization of ultrananocrystalline (UNCD) thin films has been investigated to develop biocomposite materials for use as BioMicroElectroMechanical Systems (BioMEMS). Specifically, hydrophobic, hydrogen-terminated UNCD films have been synthesized using a microwave plasma chemical vapor deposition technique then surface functionalized using a two-step modification procedure. This procedure produces a mixed submonolayer comprised of chloro- and hydroxyl- terminated alkyl chains chemisorbed to the UNCD surface. This surface modification procedure serves to provide functional groups that will allow for the subsequent attachment of a wide variety of biological macromolecules (e.g., proteins, biomembranes) and the ability to tune the hydrophilic nature of the diamond. The resultant materials have been characterized using surface-sensitive spectroscopies (NEXAFS and XPS).
Fabrication of MEMS Components Based on Ultrananocrystalline Diamond Thin Films and Characterization of Mechanical Properties
- A. V. Sumant, O. Auciello, A. R. Krauss, D. M. Gruen, D. Ersoy, J. Tucek, A. Jayatissa, E. Stach, N. Moldovan, D. Mancini, H. G. Busmann, E. M. Meyer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE5.33
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- 2000
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The mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of MEMS components. However, conventional CVD diamond deposition methods result in either a coarse-grained pure diamond structure that prevents high- resolution patterning, or in a fine-grained diamond film with a significant amount of intergranular non-diamond carbon. At Argonne National Laboratory, we are able to produce phase-pure ultrananocrystalline diamond (UNCD) films for the fabrication of MEMS components. UNCD is grown by microwave plasma CVD using C60-Ar or CH4-Ar plasmas, resulting in films that have 3-5 nm grain size, are 10-20 times smoother than conventionally grown diamond films, and can have mechanical properties similar to that of single crystal diamond. We used lithographic patterning, lift-off, and etching, in conjunction with the capability for growing UNCD on SiO2 to fabricate 2-D and 3-D UNCD-MEMS structures. We have performed initial characterization of mechanical properties by using nanoindentation and in-situ TEM indentor techniques. The values of Hardness (∼88 GPa) and Young's modulus (∼ 864 GPa) measured are very close to those of single crystal diamond (100 GPa and 1000 GPa respectively). The results show that UNCD is a promising material for future high performance MEMS devices.
Low Temperature Growth of Ultra-Nanocrystalline Diamond on Glass Substrates for Field Emission Applications
- T. D. Corrigan, A. R. Krauss, D. M. Gruen, O. Auciello, R. P. H. Chang
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- Journal:
- MRS Online Proceedings Library Archive / Volume 593 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 233
- Print publication:
- 1999
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Recent studies of field emission from diamond have focused on the feasibility of growing diamond films on glass substrates, which are the preferred choice for cost-effective, large area flat panel displays. However, diamond growth on glass requires temperatures < 500 °C, which is much lower than the temperature needed for growing conventional microwave plasma chemical vapor deposition (CVD) diamond films. In addition, it is desirable to minimize the deposition time for cost-effective processing. We have grown ultrananocrystalline diamond (UNCD) films using a unique microwave plasma technique that involves CH4-Ar gas mixtures, as opposed to the conventional CH4-H2 plasma CVD method. The growth species in the CH4-Ar CVD method are C2 dimers, resulting in lower activation energies and consequently the ability to grow diamond at lower temperatures than conventional CVD diamond processes. For the work discussed here, the UNCD films were grown with plasma-enhanced chemical vapor deposition (PECVD) at low temperatures on glass substrates coated with Ti thin films. The turn-on field was as low as 3 V/μm for a film grown at 500 °C with a gas chemistry of l%CH4/99%Ar at 100 Torr, and 7 V/μm for a film grown at 350 °C. UV Raman spectroscopy revealed the presence of high quality diamond in the films.
Two- and Three-Dimensional Ultrananocrystalline Diamond (UNCD) Structures for a High Resolution Diamond-Based MEMS Technology
- O. Auciello, A.R. Krauss, D.M. Gruen, E.M. Meyer, H.G. Busmann, J. Tucek, A. Sumant, A. Jayatissa, N. Moldovan, D. C. Mancini, M. N. Gardos
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- Journal:
- MRS Online Proceedings Library Archive / Volume 605 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 73
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- 1999
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Silicon is currently the most commonly used material for the fabrication of microelectromechanical systems (MEMS). However, silicon-based MEMS will not be suitable for long-endurance devices involving components rotating at high speed, where friction and wear need to be minimized, components such as 2-D cantilevers that may be subjected to very large flexural displacements, where stiction is a problem, or components that will be exposed to corrosive environments. The mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of long-endurance MEMS components. Cost-effective fabrication of these components could in principle be achieved by coating Si with diamond films and using conventional lithographic patterning methods in conjunction with e. g. sacrificial Ti or SiO2 layers. However, diamond coatings grown by conventional chemical vapor deposition (CVD) methods exhibit a coarse-grained structure that prevents high-resolution patterning, or a fine-grained microstructure with a significant amount of intergranular non-diamond carbon. We demonstrate here the fabrication of 2-D and 3-D phase-pure ultrananocrystalline diamond (UNCD) MEMS components by coating Si with UNCD films, coupled with lithographic patterning methods involving sacrificial release layers. UNCD films are grown by microwave plasma CVD using C60-Ar or CH4-Ar gas mixtures, which result in films that have 3-5 nm grain size, are 10-20 times smoother than conventionally grown diamond films, are extremely resistant to corrosive environments, and are predicted to have a brittle fracture strength similar to that of single crystal diamond.
Electron Emission Properties of Si Field Emitter Arrays Coated With Nanocrystalline Diamond From Fullerene Precursors
- T. G. McCauley, T. D. Corrigan, A. R. Krauss, O. Auciello, D. Zhou, D. M. Gruen, D. Temple, R.P.H. Chang, S. English, R. J. Nemanich
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- Journal:
- MRS Online Proceedings Library Archive / Volume 498 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 227
- Print publication:
- 1997
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In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.
Spectroscopic Determination of C2 Densities in AR/H 2/CH 4 and AR/H2/C60 Microwave Plasmas For Nanocrystalline Diamond Synthesis
- A. N. Goyette, J. E. Lawler, L. W. Anderson, D. M. Gruen, T. G. Mccauley, D. Zhou, A. R. Krauss
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- Journal:
- MRS Online Proceedings Library Archive / Volume 502 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 275
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- 1997
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We have measured the steady state concentration of gas phase C2 in Ar/H2/CH4 and Ar/H2/C60 microwave plasmas used for the deposition of nanocrystalline diamond films. High sensitivity white light absorption spectroscopy is used to monitor the C2 density using the d 3 Π ← a3Π (0,0) vibrational band of C2 as chamber pressure, microwave power, substrate temperature and feed gas mixtures are varied in both chemistries. Understanding how these parameters influence the C2 density in the plasma volume provides insight into discharge mechanisms relevant to the deposition of nanocrystalline diamond.
Characterization of Diamond Thin Films by Core-Level Photoabsorption and UV Excitation Raman Spectroscopy
- C. D. Zuiker, A. R. Krauss, D. M. Gruen, J. A. Carlisle, L. J. Terminello, S. A. Asher, R. W. Bormett
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- Journal:
- MRS Online Proceedings Library Archive / Volume 437 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 211
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- 1996
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Near-edge x-ray absorption fine structure (NEXAFS) and Raman spectroscopies have been used to characterize both nanocrystalline and faceted, microcrystalline diamond thin films grown by microwave plasma chemical vapor deposition under a variety of conditions. Raman spectroscopy is perhaps the most commonly used method of characterizing diamond film quality, whereas photoabsorption requires a synchrotron radiation source and is much less commonly used. Both methods characterize the sp2 (graphitic) /sp3 (diamond) electronic bonding character of the films, but Raman spectroscopy is considerably more sensitive to sp2 than sp3 bonded carbon. For nanocrystalline diamond, the use of a visible excitation source for Raman spectroscopy also gives rise to an intense fluorescence band which may completely mask the sp3 Raman line, even in films with negligible (<1%) sp2 bonding character. Near-edge x-ray absorption fine structure (NEXAFS) is a more localized measurement of the electronic bonding character, and does not have as large a variation in sensitivity between sp2 and sp3 phases.
Raman spectra measured using 632.8 nm light exhibit a sharp diamond phonon peak at 1332 cm−1 for faceted, large grain diamond films, and no obvious diamond phonon peak for the nanocrystalline diamond films. However, Raman spectra excited by 228.9 nm light exhibit a sharp diamond phonon peak for both nanocrystalline and large grain, faceted diamond films. The UV Raman results are consistent with the C(ls) NEXAFS measurements which show clear bulk diamond excitonic and sp3 features, with little evidence of sp2 character for all of the tested films. We conclude that the use of visible excitation Raman spectroscopy as the sole criterion for the assessment of quality in nanocrystalline diamond films is misleading, but that UV Raman spectroscopy and NEXAFS provide a consistent and reliable characterization. Nanocrystalline films grown using a fullerene precursor in an Ar microwave plasma with very low levels of hydrogen (2%) are found by both of the latter methods to consist almost entirely of sp3-bonded carbon with ˜2% non-tetrahedral bonding.
Laser-Reflectance Interferometry Measurements of Diamond-Film Growth
- Christopher D. Zuiker, Dieter M. Gruen, Alan R. Krauss
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- Journal:
- MRS Bulletin / Volume 20 / Issue 5 / May 1995
- Published online by Cambridge University Press:
- 29 November 2013, pp. 29-31
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- May 1995
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The remarkable properties of diamond, including its hardness, chemical inertness, high thermal conductivity, low coefficient of friction, optical transparency, and semiconducting properties, have led to considerable research in the area of diamond thin-film deposition. Diamond films have been characterized ex situ by a large number of diagnostic techniques including Raman spectroscopy, x-ray diffraction, SEM, and TEM. In situ diagnostics, which can provide information in real time as the film is growing, are less common.
Laser-reflectance interferometry (LRI) has been used to monitor the growth of diamond films in situ. The technique involves measuring the intensity of a laser beam reflected from the substrate surface on which the film is growing. The reflected beam is the sum of beams reflected by the gas-diamond interface and the diamond-silicon interface. Oscillations in the reflectivity are observed as the film grows because of interference between the reflected beams. Each oscillation indicates an increase in film thickness of λ/2n, where λ is the laser wavelength and n is the index of refraction of the film. If the index of refraction of the film is known, the thickness and growth rate can be determined in situ. For LRI measurements with 632.8-nm-wavelength HeNe lasers, the index of refraction of diamond films has been found to be within 10% of the bulk diamond value of 2.4. Each oscillation therefore indicates an increase in film thickness of 0.13 μm.
The reflectivity measured by LRI is also affected by scattering because of surface roughness.
Tem Study of Diamond Films Grown from Fullerene Precursors
- R. Csencsitsi, D. M. Gruen, A. R. Krauss, C. Zuiker
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- Journal:
- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 291
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- 1995
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Transmission Electron Microscope (TEM) techniques are applied to study the microstructure of diamond films grown from fullerene precursors. Electron diffraction and electron energy loss spectra (EELS) collected from the diamond films correspond to that of bulk diamond. Microdiffraction, high resolution images and EELS help determine that the first diamond grains that nucleate from fullerene precursors generally form on a thin amorphous carbon nterlayer and seldom directly on the silicon substrate. Grain size measurements reveal nanocrystalline diamond grains. Cross section TEM images show that the nanocrystalline diamond grains are equiaxed and not columnar nor dendritic. The microstructure of small equiaxed grains throughout the film thickness is believed responsible for the very smooth surfaces of diamond films grown from fullerene precursors.
In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique
- Orlando Auciello, A. R. Krauss, Y. Lin, R. P. H. Chang, D. M. Gruen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 341 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 385
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- 1994
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A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
A Study of Parameters that Influence Growth and Stability of the (Bi1−xPbx)2Sr2Ca2Cu3Oy Phase
- J. S. Luo, N. Merchant, V. A. Maroni, D. M. Gruen, B. S. Tani, W. L. Carter, G. N. Riley, K.H. Sandhage
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- Journal:
- MRS Online Proceedings Library Archive / Volume 275 / 1992
- Published online by Cambridge University Press:
- 26 February 2011, 233
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- 1992
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The growth and stability of the (Bi1-xPbx)2Sr2Ca2Cu3Oy (Bi-2223) phase contained in silver-sheathed wires has been investigated by a combination of x-ray diffraction, scanning electron microscopy, energy dispersive x-ray analysis, and transmission electron microscopy. Silver tubes loaded with Bi-2223 precursor powders were processed into filaments using established metallurgical techniques. The filaments were then heat-treated at selected temperatures (800 to 845°C) for a range of times (10 to 6000 min) in a 7.5% oxygen atmosphere. From these studies it has been possible to investigate the time-temperature-oxygen pressure domains wherein Bi2Sr2CaCu2O8 (Bi-2212) + second phases transform to Bi-2223. Fractional conversion (Bi-2212 --> Bi-2223) versus time data show good conformance to the kinetic model for a diffusion-controlled reaction at the interface between thin sheets and a fine powder or a fluid. Quenching experiments also reveal that the Bi-2223 phase is stable in a limited temperature interval between 810 and 830°C.
Synthesis of C-oriented YbBa2Cu3O7-δ Films on Single and Polycrystalline Substrates by Oxidation of Liquid Alloys
- J. S. Luo, N. Merchant, V. A. Maroni, D. M. Gruen, B. S. Tani, K. H. Sandhage, C. A. Craven
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- Journal:
- MRS Online Proceedings Library Archive / Volume 249 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 195
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- 1991
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Textured superconducting films of YbBa2Cu3O7-δ supported on single and polycrystalline substrates were prepared by oxidation of a liquid precursor alloy. The substrates were coated by dipping them into a molten alloy (YbBa2Cu3, m.p. ∼870°C), withdrawing them from the melt, then oxidizing the adhering liquid alloy layer to the corresponding oxide phase, i.e., YbBa2Cu3O7-δ. Samples prepared in this way exhibited a superconducting transition at ∼80 K following annealing in pure O2 at 500°C. With SrTiO3 (100) and MgO (100) substrates, evidence was seen for the epitaxial growth of YbBa2Cu3O7-δ crystals having their c-axis parallel to the [100] direction of the substrate. For polycrystalline MgO, x-ray diffraction and microstructural examination showed that the high-Tc crystallites in the films were also oriented with their c-axis perpendicular to the substrate surface, but the a and b axes directions were randomly oriented rather than epitaxial.
Sputtering of Molecules From ZnS, CdS, and FeS2
- S. Nikzad, W. F. Calaway, M. J. Pellin, C. E. Young, D. M. Gruen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 201 / 1990
- Published online by Cambridge University Press:
- 26 February 2011, 93
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- 1990
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It has been the general consensus in the sputtering community that molecules are sputtered from a clean metal surface in much smaller quantities than atoms. Some of the existing models further suggest that the sputter yield of molecules should be even lower from a compound than from a pure metal when the constituents of the molecule do not reside on neighboring sites in the solid.
In our experiments, neutral species sputtered from single crystals of ZnS, CdS, and FeS2 by a 3 keV Ar+ beam have been observed by laser photo-ionization followed by time-of-flight mass spectrometry. While the atomic metal (Fe, Zn, Cd) and S2 were the predominant species observed, substantial amounts of S, FeS, Zn2, ZnS, Cd2, and CdS were also detected. The experimental results demonstrate that molecules represent a larger fraction of the sputtered yield than was previously believed from secondary ion mass spectrometry experiments. In addition, our data suggest that the sputtered molecules are not necessarily formed from adjacent atoms in the solid. The applicability of various sputtering models will be discussed in the light of these results.
Theoretical Studies of Copper Oxide Clusters: Prediction of an Electronically Driven Phase Separation in YBa2Cu3Ox
- L. A. Curtiss, T. O. Brun, D. M. Gruen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 99 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 95
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- 1987
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On the basis of semi-empirical extended Hiickel molecular orbital calculations of copper-oxide clusters representing the new superconducting material YBa2Cu3Ox, a phase diagram is proposed which suggests that the 94 K high temperature superconducting phase of YBa2Cu3Ox is characterized by an oxygen stoichiometry near 7.0. The phase diagram predicts that a plateau should exist for Tc in the region x = 0.0 – 0.25 and that in this region two phases are present which are characterized by compositions having oxygen stoichiometries 6.5–6.75 and ca. 7.0.