10 results
Optical properties of defects in nitride semiconductors
-
- Journal:
- Journal of Materials Research / Volume 30 / Issue 20 / 28 October 2015
- Published online by Cambridge University Press:
- 23 September 2015, pp. 2977-2990
- Print publication:
- 28 October 2015
-
- Article
- Export citation
GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
-
- Journal:
- MRS Bulletin / Volume 34 / Issue 5 / May 2009
- Published online by Cambridge University Press:
- 31 January 2011, pp. 328-333
- Print publication:
- May 2009
-
- Article
- Export citation
Piezoelectric Fields in Tilted GaInN Quantum Wells
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I12-02
- Print publication:
- 2006
-
- Article
- Export citation
High quality GaN layers grown on slightly miscut sapphire wafers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF21-04
- Print publication:
- 2005
-
- Article
- Export citation
Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.32
- Print publication:
- 2004
-
- Article
- Export citation
Optical phonons and free-carrier effects in MOVPE grown AlxGa1−xN measured by Infrared Ellipsometry
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e11
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
The role of piezoelectric fields in GaN-based quantum wells
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e15
- Print publication:
- 1998
-
- Article
-
- You have access
- HTML
- Export citation
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e14
- Print publication:
- 1997
-
- Article
-
- You have access
- HTML
- Export citation
Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e37
- Print publication:
- 1996
-
- Article
-
- You have access
- HTML
- Export citation
Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 301 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 195
- Print publication:
- 1993
-
- Article
- Export citation