Surface stability of nearly defect-free epitaxial SrRuO3 thin films grown by pulsed laser deposition was studied using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and electron spectroscopies. Even after exposure to atmosphere, surfaces exhibited distinct LEED patterns providing evidence of unusual chemical stability. Surface order disappeared after heating to 200 °C in vacuum. To investigate, SrRuO3 thin films were annealed up to 800 °C in high vacuum and examined for chemical state and topography. Formation of unit-cell deep pits and the Ru-rich particles begins at low temperatures. Hydrocarbon contamination on the surface contributes to this process.

Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni–W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80–100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm2 has been demonstrated on the LZO films (YBCO/LZO/Ni–W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm2 and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO2 cap layer (YBCO/CeO2/LZO/Ni–W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO2/YSZ/Y2O3/Ni/Ni-W).

A method yielding precisely controlled thickness profiles in thin-film growth is necessary for continuous compositional spread techniques. While multiple approaches have been introduced and successfully tested, some specific applications require the use of very thin “wedge”-type profiles (∼10 Å at the thickest point), while at the same time yielding lateral sample sizes of several centimeters. Here we introduce the basic principles of a pulsed-laser deposition based approach utilizing the translation of the substrate behind a slit-shaped aperture and demonstrate by simple calculations that this method can satisfy these requirements.