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The Philippines in 2021: The Decline of the House of Duterte?
- Edited by Daljit Singh, ISEAS - Yusof Ishak Institute, Thi Ha Hoang, ISEAS - Yusof Ishak Institute
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- Book:
- Southeast Asian Affairs 2022
- Published by:
- ISEAS–Yusof Ishak Institute
- Published online:
- 01 September 2023, pp 271-292
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Summary
What a difference a year makes. At the beginning of 2021, Philippine president Rodrigo Duterte seemed nearly invincible: four and a half years into his single, six-year term, one could plausibly speculate that he would be able to exercise considerable influence over the succession process and install his own “anointed” candidate as the next president of the republic in the May 2022 elections. This would go against the usual pattern in Philippine politics, whereby governing coalitions start to splinter as elections approach and the leader is unable to satisfy all those who have earlier joined his or her camp. Duterte, arguably, might have been different. Throughout his time in office, ever since his meteoric rise from his Davao City mayoral post to the presidency in 2016, Duterte had effectively used a combination of mass appeal, strongman tactics and patronage not only to keep most of his coalition intact—but also to expand it. He had also shown himself to be the “Teflon populist”, with his popularity riding high even amidst the corruption scandals, infighting and incompetence that surrounded him. Maybe, just maybe, Duterte’s combination of charisma and coercion would enable him to buck the historical trends.
Most likely, it seemed in early 2021, Duterte would be able to engineer his replacement by either his daughter, Sara Duterte-Carpio (who had succeeded him as mayor of Davao City), or by his trusted special assistant Christopher “Bong” Go (elected to the Philippine Senate, with Duterte’s strong endorsement, in 2019). By the end of 2021, Duterte remained immensely popular, with 72 per cent approval, thus retaining his long streak of high survey ratings. But he had, quite clearly, squandered much of his influence over the process by which the next president was to be chosen. In the latter months of the year, very deep (and very public) intra-familial splits threatened the long-term viability of the House of Duterte. If the family’s national-level power is to re-emerge at some point in the future, it will quite likely be with the father out of the picture and the daughter at the helm.
The Persistence of Ethnopopulist Support: The Case of Rodrigo Duterte's Philippines
- Dean Dulay, Allen Hicken, Ronald Holmes
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- Journal:
- Journal of East Asian Studies / Volume 22 / Issue 3 / November 2022
- Published online by Cambridge University Press:
- 27 January 2023, pp. 525-553
- Print publication:
- November 2022
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The past few years have seen an emergence of populist leaders around the world, who have not only accrued but also maintained support despite rampant criticism, governance failures, and the ongoing COVID pandemic. The Philippines’ Rodrigo Duterte is the best illustration of this trend, with approval ratings rarely dipping below 80 percent. What explains his high levels of robust public support? We argue that Duterte is an ethnopopulist who uses ethnic appeals in combination with insider vs. outsider rhetoric to garner and maintain public support. Moreover, we argue that ethnic affiliation is a main driver of support for Duterte, and more important than alternative factors such as age, education, gender, or urban vs. rural divides. We provide evidence of Duterte's marriage of ethnic and populist appeals, then evaluate whether ethnicity predicts support for Duterte, using 15 rounds of nationally representative public opinion data. Identifying with a non-Tagalog ethnicity (like Duterte) leads to an 8 percent increase in approval for Duterte, significantly larger than any other explanatory factor. Among Duterte supporters, a non-Tagalog ethnicity is associated with 19 percent increase in strong versus mild support. Ethnicity is the only positive and significant result, suggesting that it strongly explains why Duterte's support remains robust. Alternative explanations, such as social desirability bias and alternative policy considerations, do not explain our results.
Imagery-enhanced v. verbally-based group cognitive behavior therapy for social anxiety disorder: a randomized clinical trial
- Peter M. McEvoy, Matthew P. Hyett, Samantha R. Bank, David M. Erceg-Hurn, Andrew R. Johnson, Michael J. Kyron, Lisa M. Saulsman, Michelle L. Moulds, Jessica R. Grisham, Emily A. Holmes, David A. Moscovitch, Ottmar V. Lipp, Bruce N. C. Campbell, Ronald M. Rapee
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- Journal:
- Psychological Medicine / Volume 52 / Issue 7 / May 2022
- Published online by Cambridge University Press:
- 11 September 2020, pp. 1277-1286
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Background
Cognitive behavior therapy (CBT) is effective for most patients with a social anxiety disorder (SAD) but a substantial proportion fails to remit. Experimental and clinical research suggests that enhancing CBT using imagery-based techniques could improve outcomes. It was hypothesized that imagery-enhanced CBT (IE-CBT) would be superior to verbally-based CBT (VB-CBT) on pre-registered outcomes.
MethodsA randomized controlled trial of IE-CBT v. VB-CBT for social anxiety was completed in a community mental health clinic setting. Participants were randomized to IE (n = 53) or VB (n = 54) CBT, with 1-month (primary end point) and 6-month follow-up assessments. Participants completed 12, 2-hour, weekly sessions of IE-CBT or VB-CBT plus 1-month follow-up.
ResultsIntention to treat analyses showed very large within-treatment effect sizes on the social interaction anxiety at all time points (ds = 2.09–2.62), with no between-treatment differences on this outcome or clinician-rated severity [1-month OR = 1.45 (0.45, 4.62), p = 0.53; 6-month OR = 1.31 (0.42, 4.08), p = 0.65], SAD remission (1-month: IE = 61.04%, VB = 55.09%, p = 0.59); 6-month: IE = 58.73%, VB = 61.89%, p = 0.77), or secondary outcomes. Three adverse events were noted (substance abuse, n = 1 in IE-CBT; temporary increase in suicide risk, n = 1 in each condition, with one being withdrawn at 1-month follow-up).
ConclusionsGroup IE-CBT and VB-CBT were safe and there were no significant differences in outcomes. Both treatments were associated with very large within-group effect sizes and the majority of patients remitted following treatment.
A NEW PENAL POPULISM? RODRIGO DUTERTE, PUBLIC OPINION, AND THE WAR ON DRUGS IN THE PHILIPPINES
- Paul D. Kenny, Ronald Holmes
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- Journal:
- Journal of East Asian Studies / Volume 20 / Issue 2 / July 2020
- Published online by Cambridge University Press:
- 10 June 2020, pp. 187-205
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- July 2020
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Drawing on evidence from the Philippines, this paper investigates the so-called penal populism thesis. Penal populism refers to an understanding of justice in which criminal and anti-social activity should be harshly punished. The paper tests whether support for harsh penal policies, including the use of extrajudicial killings, is associated with underlying populist attitudes and preferences for charismatic leadership. Since coming to power in 2016, President Rodrigo Duterte has waged a violent and highly popular campaign against drug-related criminality. Based on survey modules fielded in 2016 and 2017, the paper demonstrates a positive relationship between populist attitudes and support for the campaign against illegal drugs in general and the extra-judicial killing of suspected drug users and dealers in particular. It also demonstrates a relationship between belief in the charisma of Duterte and support for the campaign against illegal drugs. The implications of the theory and results for the fields of populism and penal populism research are discussed.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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Integrated Optics Utilizing GaN-Based Layers on Silicon Substrates
- Armand Rosenberg, Michael A. Mastro, Joshua D. Caldwell, Ronald T. Holm, Richard L. Henry, Charles R. Eddy, Konrad Bussmann, Mijin Kim
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C05-05
- Print publication:
- 2008
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It is now apparent that future generations of fast electronics and compact sensors may need to rely increasingly on integrated optical components. But integration of electronics and photonics in today's IC's is challenging. Silicon, the ubiquitous electronic material, is neither ideally suited for most photonic functions nor readily integrated with most of the common photonic materials, such as GaAs. The approach we describe here relies on GaN-based films, which can be grown directly on silicon substrates and hence can be potentially integrated with state-of-the-art Si-based electronics. We have demonstrated the fabrication of GaN structures on silicon wafers ranging in overall size from sub-micron to several millimeters, all containing highly accurate individual features on the nm scale. As proof of concept, we have fabricated GaN optical waveguides and photonic crystals containing optical cavities by patterning GaN membranes grown directly on Si wafers. Our optical cavities were designed to have resonant modes within the spectral region of the broad defect-induced luminescence of GaN. We have measured sharp resonant features associated with these cavities by optically pumping above the GaN band edge, and have compared the data to numerical simulations of the spectra. Our results to date demonstrate the feasibility of fabricating high-quality GaN photonic structures directly on Si wafers, thereby providing a possible path to achieving true integration of electronics and photonics in future generations of IC's.
Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates
- Mark E. Twigg, Yoosuf N. Picard, Nabil D. Bassim, Joshua D. Caldwell, Michael A. Mastro, Charles R. Eddy, Richard L. Henry, Ronald T. Holm, Philip G. Neudeck, Andrew J. Trunek, J. Anthony Powell
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1090 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1090-Z05-24
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- 2008
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Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films grown by metallorganic chemical vapor deposition (MOCVD) on the (0001) surface of epitaxially-grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations.
Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas
- Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell, Hui Du, Marek Skowronski, Nabil D. Bassim, Michael A. Mastro, Mark E. Twigg, Ronald T. Holm, Richard L. Henry, Charles R. Eddy, Jr.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B08-03
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- 2006
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This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.
Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces
- Charles R. Eddy, Jr, James C. Culbertson, Nabil D. Bassim, Mark E. Twigg, Ronald T. Holm, Robert E. Stahlbush, Richard L. Henry, Philip G. Neudeck, Andrew J. Trunek, J. Anthony Powell
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.7
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- 2003
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Silicon carbide (SiC) is rapidly becoming the substrate of choice for the development of high frequency and high power electronic devices employing the III-V nitride family of materials. This heteroepitaxial growth system continues to receive considerable attention, as materials issues remain the fundamental limiters to device performance. The heteroepitaxial growth of gallium nitride (GaN) thin films on stepped and step-free 4H SiC surfaces is reported. Step-free SiC surfaces are created by mesa patterning of a SiC wafer and subsequent epitaxial growth in a process described previously. This process results in a collection of both step-free and stepped surfaces on a given sample. We have employed an established metalorganic chemical vapor deposition process to grow first a thin (1200Å) aluminum nitride (AlN) nucleation layer and then a 2 μm thick GaN thin film. We have interrupted growth at various stages of AlN and GaN growth to evaluate the growth evolution using atomic force microscopy (AFM). The results show marked differences in the manner in which the initial AlN layer deposits. Nucleation is random with elongated grains on step-free SiC surfaces, while stepped surfaces have round nuclei of uniform dimensions and a high degree of spatial correlation with the nuclei arranged in rows. These differences diminish as the AlN layer approaches the desired thickness. Growth of the GaN epilayer is also markedly different on the two types of surfaces with step-free surfaces leading to random and low density nucleation of crystallites that remain as single grains for long growth times, whereas the stepped surfaces have large numbers nuclei that rapidly grow laterally. Cross-sectional transmission electron microscopy (TEM) reveals that grain sizes are 2–3X larger on step-free surfaces.
The Philippines Labour Diaspora: Trends, Issues and Policies
- from Philippines
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- By Joaquin L. Gonzalez, National University of Singapore, Ronald Holmes, De La Salle University, Philippines
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- Book:
- Southeast Asian Affairs 1996
- Published by:
- ISEAS–Yusof Ishak Institute
- Published online:
- 21 October 2015
- Print publication:
- 22 February 1997, pp 300-318
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Summary
Introduction: Political Context and Triggering Event
The execution in March 1995 of Filipina domestic worker Flor Contemplacion by the Singapore authorities provoked a national outcry in the Philippines and revived the long-standing debate over the country's two-decades old policy of exporting labour. The execution, which came just weeks before the hotly contested 1995 national elections, threw the spotlight on the plight of Philip- pine overseas contract workers (OCWs) and the inadequate attention given them by successive governments. The furore threatened the ruling coalition's anticipated victory at the polls, forcing President Fidel Ramos to take decisive action to try and defuse the situation. Among others, he set up a fact-finding and policy advisory commission, headed by retired Supreme Court Justice Emilio Gancayco; downgraded diplomatic relations with Singapore; and accepted the resignations of the two officials whose departments had come under particular attack during the period — Roberto Romulo, head of the Department of Foreign Affairs (DFA), and Nieves Confesor, head of the Department of Labor and Employment (DOLE). A number of DFA and DOLE officials abroad were recalled for consultation, and a temporary ban on domestic helpers destined for Singapore was imposed pending the overall findings and recommendations of the Gancayco Commission.
After the elections, overwhelmingly won by candidates from the ruling coalition, Ramos and his administration set to take the OCW issue beyond the Contemplacion case. Government officials, especially from the DFA, DOLE, and Congress, scrambled to introduce new policies and fast-track measures that they perceived would improve the general welfare of Filipino OCWs (for example, Migrant Workers and Overseas Filipinos Act of 1995).
This article seeks to provide an overview of OCWs in the Philippines. Firstly, it describes the relative size and distribution of the phenomenon. This is followed by an evaluation of the relevant economic benefits and social concerns. Finally, the adequacy of past government policies and the overall effectiveness of the new ones (including the Gancayco Commission's recommendations) are examined.