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- By Aaron Ben-Ze’ev, F. H. Buckley, Mina Cikara, David Combs, N. T. Feather, Kurt Feyaerts, Agneta H. Fischer, Susan T. Fiske, Charles Hoogland, Giselinde Kuipers, Colin Wayne Leach, Antony S. R. Manstead, Bert Oben, Diederik Oostdijk, Jaap W. Ouwerkerk, John Portmann, Caitlin A. J. Powell, Mark Rotteveel, D. Ryan Schurtz, Elise C. Seip, Richard H. Smith, Russell Spears, Jill M. Sundie, Stephen M. Thielke, Niels van de Ven, Wilco W. van Dijk, Lotte F. van Dillen
- Edited by Wilco W. van Dijk, Universiteit Leiden, Jaap W. Ouwerkerk, Vrije Universiteit, Amsterdam
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- Schadenfreude
- Published online:
- 05 August 2014
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- 24 July 2014, pp x-xii
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- Book:
- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
- Print publication:
- 20 September 2010, pp xi-xliv
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Residual stress and microstructure of as-deposited and annealed, sputtered yttria-stabilized zirconia thin films
- David J. Quinn, Brian Wardle, S. Mark Spearing
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- Journal:
- Journal of Materials Research / Volume 23 / Issue 3 / March 2008
- Published online by Cambridge University Press:
- 31 January 2011, pp. 609-618
- Print publication:
- March 2008
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The microstructure and residual stress of sputter-deposited yttria-stabilized zirconia (YSZ) films are presented as a function of thickness (5–1000 nm), deposition pressure (5–100 mTorr), and post-deposition temperature. The as-deposited residual stress of YSZ ranges from −1.4 GPa to 100 MPa with variations in sputtering conditions. Transitions from compressive to tensile stress are identified with variations in working pressure and film thickness. The origins and variations in as-deposited stress are determined to be from tensile stress due to grain coalescence/growth, and compressive stresses are due to forward sputtering/“atomic peening” of target atoms. The evolution of residual stress with post-deposition annealing shows a tensile stress hysteresis of up to 1 GPa for films deposited at low working pressures. This hysteresis is believed to be due to crystallization and the diffusive relief of compressive stresses initially generated by atomic peening during deposition. Discussion and evaluation of other common residual stress mechanisms are presented throughout.
Influence of Materials on the Performance Limits of Microactuators
- Prasanna Srinivasan, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1052 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1052-DD07-03
- Print publication:
- 2007
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The selection of actuators at the micro-scale requires an understanding of the performance limits of different actuation mechanisms governed by the optimal selection of materials. This paper presents the results of analyses for elastic bi-material actuators based on simple beam theory and lumped parameter thermal models. Comparisons are made among commonly employed actuation schemes (electro-thermal, piezoelectric and shape memory) at micro scales and promising candidate materials are identified. Polymeric films on Si subjected to electro-thermal heating are optimal candidates for high displacement, low frequency devices while ferroelectric thin films of Pb-based ceramics on Si/ DLC are optimal for high force, high frequency devices. The ability to achieve ∼10 kHz at scales < 100μm make electro-thermal actuators competitive with piezoelectric actuators considering the low work/volume obtained in piezoelectric actuation (∼ 10−8J.m−3.mV−2). Although shape memory alloy (SMA) actuators such as Ni-Ti on Si deliver larger work (∼ 1 J.m−3K−2) than electro-thermal actuators at relatively low frequencies (∼ 1 kHz), the critical scale associated with the cessation of the shape memory effect forms the bounding limit for the actuator design. The built-in compressive stress levels (∼ 1GPa) in thin films of Si and DLC could be exploited for realizing a high performance actuator by electro-thermal buckling.
Fabrication and structural characterization of self-supporting electrolyte membranes for a micro solid-oxide fuel cell
- Chelsey D. Baertsch, Klavs F. Jensen, Joshua L. Hertz, Harry L. Tuller, Srikar T. Vengallatore, S. Mark Spearing, Martin A. Schmidt
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- Journal:
- Journal of Materials Research / Volume 19 / Issue 9 / September 2004
- Published online by Cambridge University Press:
- 03 March 2011, pp. 2604-2615
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- September 2004
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Micromachined fuel cells are among a class of microscale devices being explored for portable power generation. In this paper, we report processing and geometric design criteria for the fabrication of free-standing electrolyte membranes for microscale solid-oxide fuel cells. Submicron, dense, nanocrystalline yttria-stabilized zirconia (YSZ) and gadolinium-doped ceria (GDC) films were deposited onto silicon nitride membranes using electron-beam evaporation and sputter deposition. Selective silicon nitride removal leads to free-standing, square, electrolyte membranes with side dimensions as large as 1025 μm for YSZ and 525 μm for GDC, with high processing yields for YSZ. Residual stresses are tensile (+85 to +235 MPa) and compressive (–865 to -155 MPa) in as-deposited evaporated and sputtered films, respectively. Tensile evaporated films fail via brittle fracture during annealing at temperatures below 773 K; thermal limitations are dependent on the film thickness to membrane size aspect ratio. Sputtered films with compressive residual stresses show superior mechanical and thermal stability than evaporated films. Sputtered 1025-μm membranes survive annealing at 773 K, which leads to the generation of tensile stresses and brittle fracture at elevated temperatures (923 K).
Residual stress and microstructural evolution in thin film materials for a micro solid oxide fuel cell (SOFC).
- David Quinn, S. Mark Spearing, Brian L. Wardle
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- Journal:
- MRS Online Proceedings Library Archive / Volume 854 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, U8.19
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- 2004
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The stability of multilayered membrane structures is a major challenge in the development of microfabricated solid oxide fuel cells (SOFC). The work presented here explores residual stress in sputter-deposited yttria stabilized zirconia (YSZ) thin films (5nm – 1000nm thickness) as a function of deposition pressure and substrate temperature. The results indicate variations in intrinsic stress from ∼0.5GPa compressive to mildly tensile (∼50 MPa). Microstructure is characterized by x-ray diffraction (XRD). The evolution of intrinsic stress with temperature is investigated by thermally cycling YSZ films deposited on silicon wafers. Observed changes of 100s of MPa in the intrinsic stress component of the film serve as indicators of possible changes in microstructure. Such changes in microstructure are subsequently characterized using x-ray diffraction of as-deposited and annealed films. Correlations with relevant mechanisms and models of residual stress evolution are discussed. Finally, use of such residual stress data in the fabrication and design of mechanically stable multilayered membranes for micro SOFC devices is discussed.
Influence of Macro- and Nanotopography, Thin Film Thermomechanical Behavior and Process Parameters on the Stability of Thermocompression Bonding.
- Konstantinos Stamoulis, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 854 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, U9.11
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- 2004
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The quality of wafer-level, gold thermocompression bonds is critically dependent on the interaction between the wafer topography, the thin film properties, the process parameters and tooling used to achieve the bonds. This study presents mechanics modeling of the effect of wafer topography. An analytical expression for the strain energy release rate associated with the elastic deformation required to overcome wafer bow is developed. Furthermore, a simple contact yielding criterion is used to examine the pressure and temperature conditions required to flatten nano-scale asperities in order to achieve bonding over the full apparent area. The analytical results combined with experimental data for the interface bond toughness obtained from four-point bend testing indicate that the overall wafer shape is a negligible contributor to bond quality. A micro-scale bond characterization based on microscopic observations and AFM measurements show that the bond yield is increased with increasing bond pressure.
Damage and Failure Mechanisms in High Pressure Silicon-Glass-Metal Microfluidic Connections
- Dong-Jin Shim, Hong-Wei Sun, Srikar T. Vengallatore, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 782 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A3.3
- Print publication:
- 2003
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The characteristics and mechanisms of damage and failure in microfluidic joints consisting of Kovar metal tubes attached to silicon using borosilicate glass seals have been investigated. These joints are representative of seals for the MIT microrocket which is a silicon-based MEMS device. A key concern in such joints is the occurrence of cracks in silicon and glass due to residual stresses caused by a large thermal excursion during processing and the dissimilar coefficients of thermal expansion of the constituent materials. Joints with two types of glass compositions and joint configurations were fabricated, tested, and inspected. Axial tension tests were performed to investigate load carrying capability and the effect of thermally-induced cracks. Finite element models were used to obtain residual stresses due to the fabrication, and the location of the cracks from the experiments were found to coincide with the locations of the maximum principal stresses. The current work shows that the certain types of thermally-induced cracks are more detrimental to joint strength than others and a good bond between the Kovar tube and the silicon sidewall can help increase joint strength via shear load transfer.
Measurement of Work of Adhesion on Wafers for Direct Bonding
- Kevin T. Turner, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 782 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A12.4
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- 2003
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The displacement loaded double cantilever beam (DCB), often referred to as the blade-insertion test or crack-opening method by the wafer bonding community, has become a common method for evaluating the work of adhesion of bonded wafer pairs. The test, while easy to perform, often yields results with large scatter and questionable accuracy. The mechanics of the specimen are investigated in detail in the current work. Expressions that demonstrate how wafer bow may lead to residual stresses that result in large errors in the calculated work of adhesion are developed. A three-dimensional finite element model is used to show that due to the circular wafer geometry and silicon anisotropy there is a large variation of the strain energy release rate across a straight crack front. The model is used to predict the actual crack front shape and shows good agreement with experiments. The results of the finite element simulations are compared to the traditional expression used for data reduction and implications of the model highlighted.
Selection of Materials and Sensors for Health Monitoring of Composite Structures
- Seth S. Kessler, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 785 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D11.1
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- 2003
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Embedded structural health monitoring systems are envisioned to be an important component of future transportation systems. One of the key challenges in designing an SHM system is the choice of sensors, and a sensor layout, which can detect unambiguously relevant structural damage. This paper focuses on the relationship between sensors, the materials of which they are made, and their ability to detect structural damage. Sensor selection maps have been produced which plot the capabilities of the full range of available sensor types vs. the key performance metrics (power consumption, resolution, range, sensor size, coverage). This exercise resulted in the identification of piezoceramic Lamb wave transducers as the sensor of choice. Experimental results are presented for the detailed selection of piezoceramic materials to be used as Lamb wave transducers.
Bonding of Bulk Piezoelectric Material to Silicon Using a Gold-Tin Eutectic Bond
- Kevin T. Turner, Richard Mlcak, David C. Roberts, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 687 / 2001
- Published online by Cambridge University Press:
- 15 March 2011, B3.2
- Print publication:
- 2001
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A class of MEMS devices, which utilizes microfabrication technology and bulk piezoelectric material, is currently being developed to produce high power density transducers. A thin-film gold-tin eutectic solder bond has been developed to bond electrically and mechanically bulk piezoelectric elements to microfabricated silicon structures in these devices. A 4.3 [.proportional]m thick multilayer film structure, consisting of a titanium adhesion layer, a platinum diffusion barrier, a gold-tin (80 wt.% Au - 20 wt.% Sn) alloy layer, and a pure gold capping layer, was sputter deposited on the piezoelectric components to be bonded. Bonding was accomplished by mating the piezoelectric components with silicon components metallized with a titanium-platinum-gold multilayer film and heating to approximately 300°C in a reducing atmosphere. The bonding technology allows thin, electrically conductive bonds to be formed between dissimilar materials with minimal amounts of applied pressure during bonding. Successful bonding has been achieved between single crystal silicon and polycrystalline lead-zirconate-titanate (PZT-5H) as well as between silicon and single crystal lead zinc niobate-lead titanate (PZN-PT). The process was optimized to produce mechanically robust, void-free bonds. The absence of voids was verified through scanning electron microscope examinations of bond cross-sections. Tensile tests conducted on representative structures indicated that the strength of the bond was limited by the strength of the titanium – PZT-5H interface.
High Temperature, High-Pressure Fluid Connections for Power Micro-Systems
- Todd S. Harrison, Adam P. London, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE6.5
- Print publication:
- 2000
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High power density micro-systems offer the potential to revolutionize technologies for portable electrical power generation, propulsion and flow control. Devices are being designed and fabricated which include micro-gas turbine engines, micro-rocket engines, micro-motor- compressors, micro-pumps and micro-hydraulic transducers. Common to all of this family of devices is the need to create packages that service the devices, and interface them with the macro-scale environment. Fluid interconnections are a particularly demanding packaging element for this class of devices. In order to achieve high power densities, these devices are required to operate at high pressures and, in some cases, high temperatures. This paper describes the design, analysis, fabrication and testing of high-pressure, high temperature fluid connections for the micro-engine and micro-rocket applications. A glass bonding technology has been developed to allow the creation of multiple fluidic connections consisting of Ni/Fe alloy tubes to silicon devices. Key strategies to achieve high strength connections are: to minimize the mismatch in coefficients of thermal expansion between the components, to eliminate voids from the glass and to promote adequate wetting of the glass to both the tubes and the silicon. Mechanical test results are presented which correlate the strength and statistical reliability of such bonds to the processing conditions, choice of glass and surface preparation prior to bonding. Successful examples of packaged micro-engine and micro-rocket devices are presented.
Processing of Thick Dielectric Films for Power MEMS: Stress and Fracture
- Kuo-Shen Chen, Xin Zhang, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE8.4
- Print publication:
- 2000
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This paper presents residual stress characterization and fracture analysis of thick silane based PECVD oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of oxide films so as to refine the fabrication process for power MEMS. It is shown that residual stress in oxide films strongly depended on thermal processing history. Dissolved gases were found to play an important role in governing intrinsic stress. The tendency to form cracks is a strong function of film thickness and annealing temperature. Mixed mode fracture mechanics was applied to predict critical cracking temperature, and there is a fairly good match between theoretical predictions and experimental observations.
Characterization of Silicon Fusion Bonds Using a Four-Point Bend Specimen
- Kevin T. Turner, Arturo A. Ayon, Dongwon Choi, Bruno Miller, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE6.3
- Print publication:
- 2000
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The increased number of MEMS devices that are fabricated by bonding two or more bulk micromachined silicon wafers has highlighted the need to produce reliable silicon fusion bonds. The current study focuses on employing a four-point bend delamination specimen to measure silicon fusion bond strength as a function of processing conditions. The specimen, which is composed of two bonded layers and an initial notch, permits the measurement of a mixed-mode critical strain energy rate, GC, at the interface. This specimen geometry is advantageous because it does not require measurement of crack length to calculate the strain energy release rate and is insensitive to damage near the specimen edges. The fact that the interface is loaded under mixed-mode conditions presents difficulties in achieving stable crack propagation in well bonded specimens. Attempts were made to eliminate this problem by reducing the effective bond toughness by etching shallow grooves in the wafer surfaces to reduce the bonded area. Testing revealed that while this approach reduced the effective toughness of the interface, it did not prevent crack deflection in well bonded samples. Despite the limitations of the specimen, data was obtained for silicon fusion bonds fabricated under various annealing and contacting conditions. Test results indicate an increase in bond toughness with annealing temperature and time. The data also suggests that the contacting pressure and duration have little effect on bond quality. The specimen, while limited to characterizing bonds with lower toughness, proved straightforward to fabricate and test.
Characterization of Low Temperature, Wafer-Level Gold-Gold Thermocompression Bonds
- Christine H. Tsau, Martin A. Schmidt, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 605 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 171
- Print publication:
- 1999
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Low temperature, wafer-level bonding offers several advantages in MEMS packaging, such as device protection during aggressive processing/handling and the possibility of vacuum sealing. Although thermocompression bonding can be achieved with a variety of metals, gold is often preferred because of its acceptance in die bonding [1] and its resistance to oxidation. This study demonstrates that the simultaneous application of moderate pressure (0.5 MPa) and temperature (300°C) produces strong wafer-level bonds. A four-point benddelamination technique was utilized to quantify bond toughness. Test specimens exhibited constant load versus displacement behavior during steady state crack propagation. Two distinct fracture modes were observed: cohesive failure within the Au and adhesive failure at the Ti-Si interface. The strain energy release rate for Au-Au fracture was found to be higher than that associated with Ti-Si fracture, consistent with the greater plastic deformation that occurs in the metal during fracture.
Microfabricated Silicon Carbide Microengine Structures
- Kevin A. Lohner, Kuo-Shen Chen, Arturo A. Ayon, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 546 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 85
- Print publication:
- 1998
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A research and development program is underway to develop technology for a MEMS-based microgas turbine engine. The thermodynamic requirements of power-generating turbomachinery drive the design towards high rotational speeds and high temperatures. To achieve the specified performance requires materials with high specific strength and creep resistance at elevated temperatures. The thermal and mechanical properties of silicon carbide make it an attractive candidate for such an application. Silicon carbide as well as silicon-silicon carbide hybrid structures are being designed and fabricated utilizing chemical vapor deposition of relatively thick silicon carbide layers (10–100 μm) over time multiplexed deep etched silicon molds. The silicon can be selectively dissolved away to yield high aspect ratio silicon carbide structures with features that are hundreds of microns tall.
Research has been performed to characterize the capabilities of this process. Specimens obtained to date show very good conformality and step coverage with a fine (≈0.1 μm dia.) columnar microstructure. Surface roughness (Rq) of the films is on the order of 100 nm, becoming rougher with thicker deposition. Residual stress limits the achievable thickness, as the strain energy contained within the compressive film increases its susceptibility to cracking. Room temperature biaxial mechanical testing of CVD silicon carbide exhibits a reference strength of 724 MPa with a Weibull modulus, m =16.0.
Dependence Of Silicon Fracture Strength And Surface Morphology On Deep Reactive Ion Etching Parameters
- Kuo-Shen Chen, Arturo A. Ayon, Kevin A. Lohner, Mark A. Kepets, Terran K. Melconian, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 546 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 21
- Print publication:
- 1998
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The development of a high power-density micro-gas turbine engine is currently underway at MIT. The initial goal is to produce the components by deep reactive ion etching (DRIE) single crystal silicon. The capability of the silicon structures to withstand the very high stress levels within the engine limits the performance of the device. This capability is determined by the material strength and by the achievable fillet radii at the root of turbine blades and other etched features rotating at high speeds. These factors are strongly dependent on the DRIE parameters. Etching conditions that yield large fillet radii and good surface quality are desirable from a mechanical standpoint. In order to identify optimal DRIE conditions, a mechanical testing program has been implemented. The designed experiment involves a matrix of 55 silicon wafers with radiused hub flexure specimens etched under different DRIE conditions. The resulting fracture strengths were determined through mechanical testing, while SEM analysis was used to characterize the corresponding fillet radii. The test results will provide the basis for process optimization of micro-turbomachinery fabrication and play an important role in the overall engine redesign.
Silicon Strength Testing for Mesoscale Structural Applications
- Kuo-Shen Chen, Arturo A. Ayon, S. Mark Spearing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 518 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 123
- Print publication:
- 1998
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The development of power MEMS, such as the Microengine being developed at MIT, requires highly stressed structures to achieve high power densities. Material strength is, therefore, a critical issue for the design of such devices. Due to the stochastic nature of the strength of brittle materials, the length scales of the test specimens should be close to those of the structure in order to avoid excessive extrapolation of the test data. In this paper, strength characterization and supporting analysis of mesoscale biaxial flexure and radiused hub flexure single crystal silicon specimens are presented. The Weibull reference strength' of planar biaxial flexure specimens was found to lie in the range 1.2 to 4.6 GPa, depending on the surface quality. The local strength at stress concentrations was obtained by testing radiused hub flexure specimens. For the case of deep reactive ion etched (DRIE) specimens, the strength at fillet radii was found to be significantly lower than that measured from planar biaxial flexure specimens due to the inferior surface quality in such regions. It was found that strength could be significantly increased by the introduction of an additional isotropic etch after the DRIE step. The test results reported herein have important implications for the development of highly stressed microfabricated structures. The sensitivity of the mechanical strength to surface processing and etching techniques must be accounted for in the design cycle, particular with regard to the selection of the appropriate fabrication route. Furthermore, in the design of highly stressed MEMS devices, it is important to account for the stochastic nature of the material strength.