GaSb and AlSb are very interesting semiconductors widely used
in multiple applications such as optoelectronics or thermophotovoltaic
cells. AlSb has higher band gap than GaSb but very similar lattice
parameter, which allows the fabrication of lattice-matched films
with different energy band gap over GaSb substrates. Moreover
the ternary alloys, in the system AlxGa1−xSb,
are very interesting for semiconductor device engineering where the
capacity of creating lattice-matched heterostructures with different
band gap is very important. In this work, we present a study on the formation
of AlxGa1−xSb films on GaSb substrates by Al diffusion.
Al thin films were evaporated over GaSb substrates and then annealed
with different time and temperature conditions. RBS measurements
has been performed to analyze the diffusion profile and to calculate
the thickness of the AlxGa1−xSb films. The dependence
of the characteristics of the films with annealing time and temperature
is analyzed. EDAX and XRD analysis have been performed to calculate
the specific composition of the alloy depending on the film growth
parameters