A life-threatening cardiopulmonary resuscitation (CPR)-related injury can cause recurrent arrest after return of circulation. Such injuries are difficult to identify during resuscitation, and their contribution to failed resuscitation can be missed given the limitations of conventional CPR. Extracorporeal cardiopulmonary resuscitation (ECPR), increasingly being considered for selected patients with potentially reversible etiology of arrest, may identify previously occult CPR-related injuries by restoring arterial pressure and flow. Herein, we describe two cases of severe CPR-related injuries contributing to recurrent arrest. Each case had ECPR implemented within 60 minutes of the start of CPR. After the presumed cardiac etiology had been addressed with percutaneous coronary intervention, life-threatening cardiovascular injuries with recurrent arrest were noted, and resuscitative thoracotomy was performed under ECPR. One patient survived to hospital discharge.

ECPR may provide an opportunity to identify and correct severe resuscitation-related injuries causing recurrent arrest. Chest compression depth >6 cm, especially in older women, may contribute to these injuries.

Background: The influences of demographics, culture, language, and environmental changes on Mini-Mental State Examination (MMSE) scores are considerable.

Methods: Using a sample of 7452 healthy, community-dwelling elderly Koreans, aged 55 to 94 years, who participated in the four ongoing geriatric cohorts in Korea, we investigated demographic influences on MMSE scores and derived normative data for this population. Geropsychiatrists strictly excluded subjects with cognitive disorders according to the protocol of the Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet (CERAD-K) Clinical Assessment Battery (CERAD-K-C).

Results: Education (standardized β = 0.463), age (standardized β = −0.303), and gender (standardized β = −0.057) had significant effects on MMSE scores (p < 0.001). The score of MMSE increase 0.379 point per 1-year education, decrease 0.188 per 1-year older, and decrease 0.491 in women compared to men. Education explained 30.4% of the scores’ total variance, which was much larger than the variances explained by age (8.4%) or gender (0.3%). Accordingly, we present normative data for the MMSE stratified by education (0, 1–3, 4–6, 7–9, 10–12, and ≥ 13 years), age (60–69, 70–79, and 80–89 years), and gender.

Conclusions: We provide contemporary education-, age-, and gender-stratified norms for the MMSE, derived from a large, community-dwelling elderly Korean population sample, which could be useful in evaluating individual MMSE scores.

We have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

A 1MV AMS was installed in KIGAM (Korea Institute of Geoscience and Mineral Resources). After 4 months of installation, the AMS started normal operation from January 2008. This multi-element AMS was developed by HVEE to measure 14C, 10Be, and 26Al. The results of an acceptance test demonstrate that this machine is capable of routine 14C age dating and of measurements of other radioisotopes in terms of accuracy and precision as well as the background level. After installation, an investigation aimed at determining the stable operating conditions was conducted, and background levels were determined to be as low as 10–15 for 14C and 10–14 for 10Be and 26Al.

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pre-grown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from [100] to [110]. We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm2V−1s−1.

The liquid lens based on MEMS technology can be an appropriate solution to improve the imaging capability of a capsule endoscope because it can be realized small enough and also consume negligible power. In this paper, a cylinder-type liquid lens was designed to minimize the dead area and then fabricated with MEMS technology combining the silicon thin-film process and the wafer bonding process where the multiple dielectric layer of Teflon, silicon nitride and thermal oxide was formed on the cylinder wall. The focal length of the lens module including the fabricated liquid lens was changed reproducibly as a function of the applied voltage. With the change of 30V in the applied bias, the focal length of the constructed lens module could be tuned in the range of about 42cm. The fabricated liquid lens was also proven to be small enough to be adopted in the capsule endoscope, which means the liquid lens can be utilized for the imaging capability improvement of the capsule endoscope.

Due to a rapid shrinkage in memory devices, backned of the line process experiences great difficulties, especially Al metallization. Furthermore, there is a continuous demands in low line resistance in order to promote device performances. In this article, Al damascene process is proposed as compared to Al patterning process, which suffers from inherent pattering issue at a fine pitch under 70nm. The most difficulties in the development of Al damascene process were to form a stable and void free Al in fine trench and to obtain scratch and corrosions free Al surface. In this study, 50nm beyond fill was successfully achieved by “bottom up growth” of CVD Al. For the process, CVD Al by using Methylpyrroridine Alane (MPA) precursor was deposited on a stacked film of CVD TiN and PVD TiN as a wetting layer, which was followed by PVD Al and reflow, then the Al surface was polished with colloidal silica based slurry.

In addition, electrical property of Al scheme and W scheme was compared with damascene pattern, along with which we demonstrated that around 36% decrease in parasitic capacitance is achievable by decrease of metal line height from 3500A to 1000A on simulation test implying that device performance could be enhanced.

We report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite structured GaN nanowires doped homogeneously with about 5 atomic % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 100 K.

This study presents the effect of pad properties, such as elastic modulus and surface roughness, on planarity in a CMP process. A systematic method to measure planarization length, which represents the die-scale planarity in a quantitative manner, has been proposed. It has been shown that the planarization length is highly dependent on the bulk modulus of the pad. The effect of elastic modulus and roughness of the pad on dishing amount, which represents the feature-scale planarity, has been shown. Dishing amount is determined by the elastic modulus of the superficial layer of the pad, which is typically tens of microns thick, rather than by the bulk elastic modulus of the pad. A double layer pad model has been proposed based on the observed results, which can explain that the dishing amount is reduced by increasing elastic modulus of the pad superficial layer, or by decreasing the surface roughness of the pad.

A direct synthesis of carbon nanotubes (CNTs) on substrates by chemical vapor deposition (CVD) is one of highly probable routes to reach their application to field emission displays. Several stringent requirements are prerequisite for this purpose, including low temperature growth below 600°C to engage glass substrates and large area deposition for practical use. This study carried out synthesis of CNTs by thermal CVD on glass substrates at temperatures as low as 500~550°C. CNTs were grown by thermal decomposition of CO and H2 gases at an atmospheric pressure for different thickness of Invar (an Fe-Ni-Co alloy ) catalytic layers. The growth of CNTs was strongly correlated with preparation of catalytic layers. The diameters and heights of as-grown CNTs increased as the catalytic layers became thicker from 2nm to 30nm. Measurements of the field emission properties of CNTs showed that the threshold electric fields were lowered with increasing thickness of catalytic layers. A uniform electron emission was observed over a large area of 150 × 150mm2, with high emission currents and high brightness.

The YSTAR program is a general sky survey looking for variability. The main equipments are three 0.5-m telescopes. These telescopes have fast F/2 optics covering nearly 3.5 square degree field onto a 2K CCD. They also have very fast slew capability, which exceeds 10 degrees per second. These two factors make them most suitable for rapid target acquisition and wide-field surveys of various kinds. Our primary objective is to identify and monitor variable stars down to 18th R-magnitude, and our observing mode allows the same data set to be also useful in identifying asteroids. Our first telescope has just begun regular automated operation, and the second telescope will be installed in South Africa within this year to provide coverage of the southern sky.

The effects of electron cyclotron resonance (ECR) N2O-plasma nitridation on the characteristics of thermal SiO2 have been investigated. Although the ECR N2O-plasma nitridation was performed at low-temperature(≤400°C), it was found that oxynitride layer can be successfully grown at the Si/SiO2 interface. The atomic concentration of nitrogen near the Si/SiO2 interface was comparable to that of high temperature N2O annealing. The ECR N2O-plasma nitrided thermal SiO2 exhibits higher breakdown field characteristics, higher time-to-breakdown and charge-to-breakdown values in comparison with those of thermal SiO2. In addition, ECR N2O-plasma nitrided thermal SiO2 shows improved charge trapping properties