Symposium R – Radiation Effects and Ion Beam Processing of Materials
Research Article
Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm
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- 01 February 2011, R9.12
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Enhancement effect of photoluminescence in Si nanocrystals by phosphorus implantation
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- 01 February 2011, R9.20
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Ion Beam Processing for Silicon - Based Light Emission
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- 01 February 2011, R11.1
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Atomic-scale simulations of radiation effects in GaN and carbon nanotubes
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- 01 February 2011, R6.6
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Application of High Energy Ion Beam on the Control of Boron Diffusion
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- 01 February 2011, R7.1
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High rate etching of GaAs and GaP by gas cluster ion beams
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- 01 February 2011, R9.38
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Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon
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- 01 February 2011, R10.10
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Modification of lattice structure and magnetic properties of Fe-Rh alloys by energetic electron irradiation
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- 01 February 2011, R3.15
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The Origin of Radiation Resistance of Magnesium Aluminate Spinel
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- 01 February 2011, R3.8
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Structural Disordering in Magnesium Aluminate Spinel Compounds under Ion-Beam Irradiation
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- 01 February 2011, R5.2
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Diffraction Contrast Image Analysis on the Facet Defects of the Laser Diodes Caused by ECR Cleaning Process
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- 01 February 2011, R3.1
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Thermal Stability of Thin Films of Ion Beam Deposited CNx
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- 01 February 2011, R9.21
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Ultrathin Cu Films on Mo(110) Characterized by Helium Implantation
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- 01 February 2011, R10.5
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Molecular dynamics simulation of point defect accumulation in 3C-SiC
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- 01 February 2011, R4.1
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Trapping of argon in ion beam deposited thin films of CNx Hy
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- 01 February 2011, R9.22
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Dynamic Recovery in Au Ion Irradiated Gallium Nitride
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- 01 February 2011, R5.5
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Influence of Hydrogen Plasma Treatment on He Implantation-Induced Nanocavities in Silicon
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- 01 February 2011, R3.32
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Space Environment Effect on Fluorinated Polymers
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- 01 February 2011, R2.10
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Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence
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- 01 February 2011, R9.5
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The Role Of Ge In Cluster Formation In B And Bf2 Implanted Si Wafers After Ge Pre-Amorphization
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- 01 February 2011, R7.3
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