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Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm

Published online by Cambridge University Press:  01 February 2011

O. Moutanabbir ,
B. Terreault ,
E. Shaffer  and
G. G. Ross
O. Moutanabbir
Affiliation:
INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet C. P. 1020, Varennes, Québec J3X 1S2, moutanabbir@inrs-emt.uquebec.ca
B. Terreault
Affiliation:
INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet C. P. 1020, Varennes, Québec J3X 1S2, moutanabbir@inrs-emt.uquebec.ca
E. Shaffer
Affiliation:
INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet C. P. 1020, Varennes, Québec J3X 1S2, moutanabbir@inrs-emt.uquebec.ca
G. G. Ross
Affiliation:
INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet C. P. 1020, Varennes, Québec J3X 1S2, moutanabbir@inrs-emt.uquebec.ca
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Abstract

Hydrogen ion blistering has applications in the fabrication of silicon-on-insulator and other devices. Si (001) samples implanted with different fluences of 5 keV H or D ions were rapidly thermal annealed under vacuum. The surface morphology studied by atomic force microscopy revealed that: (1) there is not only a threshold fluence but also a maximum fluence for blistering; and (2) there is a giant isotope effect: The H and D blistering fluence “windows” are (1.5–3.5) × 1016 H cm-2 and (4–8) × 1016 D cm-2 respectively. Due to the higher fluences and higher gas pressure, D blisters are larger (80% surface coverage) than H blisters (60% coverage) and twice as voluminous. Raman spectroscopy and thermal desorption spectrometry suggest that the high fluence blister absence and the giant isotope effect are both connected with an enhancement of the Si–H/D bond stability.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.12
Copyright
Copyright © Materials Research Society 2004

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References

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