13 results
In situ fracture observations of distinct interface types within a fully lamellar intermetallic TiAl alloy
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- Journal:
- Journal of Materials Research , First View
- Published online by Cambridge University Press:
- 11 November 2020, pp. 1-14
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Studies of Local Structural Distortions in Strained Ultrathin BaTiO3 Films Using Scanning Transmission Electron Microscopy
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- Microscopy and Microanalysis / Volume 20 / Issue 3 / June 2014
- Published online by Cambridge University Press:
- 21 March 2014, pp. 740-747
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- June 2014
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Digital-beam-forming extension for a two-channel E-band FMCW-sensor
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- International Journal of Microwave and Wireless Technologies / Volume 5 / Issue 1 / February 2013
- Published online by Cambridge University Press:
- 23 January 2013, pp. 85-90
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Life Cycle Assessment of Future Fossil Technologies with and without Carbon Capture and Storage
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- MRS Online Proceedings Library Archive / Volume 1041 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1041-R05-01
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- 2007
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Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 754-760
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- 2000
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Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.50
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- 1999
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GaN based LED's with different recombination zones
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e44
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- 1997
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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e26
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- 1997
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e19
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- 1996
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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e13
- Print publication:
- 1996
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Determination of the dislocation densities in GaN on c-oriented sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e40
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- 1996
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Cation Radical Salts of S, S-Dmbedt-TTF: Semiconductors, Metals and a new Organic Superconductor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 247 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 509
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- 1992
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