7 results
40 - Fog deposition and chemistry in a sub-tropical montane cloud forest in Taiwan
- from Part IV - Nutrient dynamics in tropical montane cloud forests
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- By S. C. Chang, National Dong Hwa University, Taiwan, C. F. Yeh, National Dong Hwa University, Taiwan, M. J. Wu, National Dong Hwa University, Taiwan, Y. T. Chen, National Dong Hwa University, Taiwan, Y. J. Hsia, National Dong Hwa University, Taiwan, C. P. Wang, Taiwan Forestry Research Institute, Taiwan, J. T. Wu, Academia Sinica, Taiwan
- Edited by L. A. Bruijnzeel, Vrije Universiteit, Amsterdam, F. N. Scatena, University of Pennsylvania, L. S. Hamilton, Cornell University, New York
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- Tropical Montane Cloud Forests
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- 03 May 2011
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- 06 January 2011, pp 378-386
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Summary
ABSTRACT
Annual fog deposition and atmospheric chemical deposition were evaluated for a strongly fog-affected coniferous forest at Chi-Lan, Taiwan. Fog capture efficiencies of Chamaecyparis obtusa var. formosana leaves were measured at three heights within the canopy using in situ exposure experiments under contrasting climatic conditions. The efficiencies obtained in this way were multiplied times leaf biomass to calculate stand-level fog deposition rates. Furthermore, a statistical model was developed, linking fog deposition rate to visibility. Using the latter model, annual fog deposition from March 2003 to February 2004 was calculated to be 297 mm, or ~9% of the total atmospheric water input. Fog contributions exhibited a highly seasonal pattern that depended mainly on the amount of precipitation. Due to the higher chemical concentrations of fog compared to precipitation, nutrient deposition via fog played a significant role. Inorganic nitrogen was absorbed by the canopy whereas potassium was leached. It is concluded that fog constitutes an important factor influencing the water and nutrient dynamics of the montane forest ecosystem under study.
INTRODUCTION
The concept of a “montane cloud forest belt” has been recognized in Taiwan for decades (Su, 1984). Although there were few meteorological records on cloud heights at the time, the elevational range of the cloud belt was inferred from temperature lapse rates as calculated from data of more than 150 weather stations (Su, 1984).
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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New Technique for Determining Mechanical Property of Polymer/Metal Interface
- T. Du, M. Liu, S. Seghi, K. J. Hsia, J. Economy, J. K. Shang
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- MRS Online Proceedings Library Archive / Volume 661 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, KK5.1
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- 2000
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A new experimental technique for determining mechanical properties of the polymer-metal interface was developed by replacing conventional mechanical testing machine with a piezoelectric actuator. Using this technique, fatigue crack growth behavior of epoxy/aluminum interface was studied as a function of electric field, crack length and cyclic frequency. The crack growth rate was found to depend on the magnitude of the applied electric field and decrease with testing frequency.
RTP Based Tin Barrier Integrity for WF6 Processing During W-Plug Formation
- C. Y. Lee, H. Yen, S. T. Hsia, D. Liu, N. Shah, K. Feldmeier, Y. Wasserman
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- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 383
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- 1995
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The study evaluates the barrier integrity of Rapid Thermal Processed (RTP) titanium layer to form TiSi2/TiN and sputter deposited TiN layer annealed in RTP system. Various temperatures and ambient conditions were used during processing. Subsequent effects of the W-plug process on the TiN layer have been evaluated in terms of effects of WF6 on the underlying Ti/TiN layer.
Evaluation of the WF6 on the via side walls and the via corners will be the primary focus of this work. Results will be discussed in terms of effective TiN thickness the process of formation of TiN and its stability
CoSi and CoSi2 Phase Formation on Bulk and Soi Si Substrates
- S. L. Hsia, T. Y. Tan, P. L. Smith, G. E. Mcguire
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- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 373
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- 1993
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We have studied the CoSi and CoSi2 phase formation sequence in (001) bulk and SOI Si wafers, using Co/Ti bimetallic layers as source materials which are suitable for growing epitaxial CoSi2 films on (001) Si. In bulk Si, co-formation of polycrystalline CoSi and epitaxial CoSi2 phases at T>500°C have been observed. These phases form respectively at the metal and Si sides of the film. For very long times and/or at high temperatures, only epitaxial CoSi2 is observed, e.g., for samples annealed at 560°C for 30 min or at 900°C for 10 s. When using (001) SOI Si with inexhaustible Co supply, only polycrystalline CoSi has been formed for a 900°C 10 s annealing, which is in contrast to the bulk Si results. This phenomenon is understood on the basis of Gibbs free energy reduction in forming the two phases. In the CoSi2 formation temperature range, Gibbs free energy release in forming CoSi2 is only ∼10% more than that of forming CoSi. Consequently, after all Si atoms have been consumed, the formation of CoSi becomes energetically more favorable, since the free energy reduction due to formation of 2x mole of CoSi is much larger than that due to formation of lx mole of CoSi2, where x is the SOI Si mole number.
Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi2 Film and Si Substrate
- S. L. Hsia, T. Y. Tan, P. L. Smith, G. E. Mcguire
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- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 409
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- 1993
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Arsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+ (doped by As to ∼2}1019 cm−3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ∼200°C to ∼700°C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ∼2 within a distance of ∼30nm from the interface, while the incorporated As in the film is ∼30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed.
Formation Mechanism of Epitaxial CoSi2 Films on (001) Si Using Ti-Co Bimetallic Layer Source Materials
- S. L. Hsia, T. Y. Tana, P. L. Smith, G. E. Mcguire
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- MRS Online Proceedings Library Archive / Volume 280 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 603
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- 1992
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The mechanism of formation of epitaxial CoSi2 film on (001) Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co silicide formation processes and structures in samples prepared by isochronal annealing and by isothermal annealing. The results demonstrated that, in leading to epitaxial CoSi2 film formation, Ti has played two roles. It has served as a barrier material to Co atoms and thus preventing Co2Si from forming. More importantly, it has allowed nucleation and growth of epitaxial-CoSi2 to dominate the Co silicide film formation process, apparently because it has served as a cleanser to remove native oxide from the Si substrate surface.