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Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi2 Film and Si Substrate

Published online by Cambridge University Press:  03 September 2012

S. L. Hsia ,
T. Y. Tan ,
P. L. Smith  and
G. E. Mcguire
S. L. Hsia
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
T. Y. Tan
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
P. L. Smith
Affiliation:
MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
G. E. Mcguire
Affiliation:
MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

Arsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+ (doped by As to ∼2}1019 cm−3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ∼200°C to ∼700°C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ∼2 within a distance of ∼30nm from the interface, while the incorporated As in the film is ∼30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 409
Copyright
Copyright © Materials Research Society 1994

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References

1. Colinge, J. P., IEEE Electron Device Lett. 7, 244 (1986).CrossRefGoogle Scholar
2. Kistler, N., Ploeg, E. V., Woo, J., and Plummer, J., IEEE Electron Device Lett. 13, 235 (1992).CrossRefGoogle Scholar
3. Wang, Q., Osbum, C. M., and Canovai, C. A., IEEE Trans. Electron Device 39, 2486 (1992).Google Scholar
4. Dass, M. L. A., Fraser, D. B., and Wei, C.-S., Appl.Phys. Lett. 58, 1308 (1991).CrossRefGoogle Scholar
5. Hsia, S. L., Tan, T. Y., Smith, P. L., and McGuire, G. E., J. Appl. Phys. 70, 7579 (1991).Google Scholar
6. Hsia, S. L., Tan, T. Y., Smith, P. L., and McGuire, G. E., J. Appl. Phys. 72, 1864 (1992).Google Scholar
7. Seidel, T. E., IEEE Electron Device Lett. 4, 353 (1983).Google Scholar
8. Shone, F. C., Saraswat, K. C., and Plummer, J. P., in Technical Digest of the IEDM, pp 407 (IEEE, New York, 1985).Google Scholar
9. Kwong, D. L., Meyers, D. C., Alvi, N. S., Li, L. W., and Norbeck, E., Appl. Phys. Lett. 47, 688 (1985).CrossRefGoogle Scholar
10. Hsia, S. L., Tan, T. Y., Smith, P. L., and McGuire, G. E., in Evolution of Surface and Thin Film Microstructures,.editors: Atwater, H. A., Grabow, M., Chason, E., and Lagally, M., Materials Research Society Proceeding vol. 280 (Materials Research Society, Pittsburgh, PA, 1993).Google Scholar
11. Shukla, R. K., Davies, P. W., and Tracy, B. M., J. Vac. Sci. Technol. B4, 1344 (1986).Google Scholar