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RTP Based Tin Barrier Integrity for WF6 Processing During W-Plug Formation

Published online by Cambridge University Press:  15 February 2011

C. Y. Lee ,
H. Yen ,
S. T. Hsia ,
D. Liu ,
N. Shah ,
K. Feldmeier  and
Y. Wasserman
C. Y. Lee
Affiliation:
VIS, Hsinchu, Taiwan
H. Yen
Affiliation:
VIS, Hsinchu, Taiwan
S. T. Hsia
Affiliation:
VIS, Hsinchu, Taiwan
D. Liu
Affiliation:
VIS, Hsinchu, Taiwan
N. Shah
Affiliation:
A.G. Associates, Sunnyvale, CA., U.S.A.
K. Feldmeier
Affiliation:
A.G. Associates, Sunnyvale, CA., U.S.A.
Y. Wasserman
Affiliation:
A.G. Associates, Sunnyvale, CA., U.S.A.
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Abstract

The study evaluates the barrier integrity of Rapid Thermal Processed (RTP) titanium layer to form TiSi2/TiN and sputter deposited TiN layer annealed in RTP system. Various temperatures and ambient conditions were used during processing. Subsequent effects of the W-plug process on the TiN layer have been evaluated in terms of effects of WF6 on the underlying Ti/TiN layer.

Evaluation of the WF6 on the via side walls and the via corners will be the primary focus of this work. Results will be discussed in terms of effective TiN thickness the process of formation of TiN and its stability

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 383
Copyright
Copyright © Materials Research Society 1995

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References

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