10 results
Geoarchaeological Evidence for Prairie-Mound Formation in the Mississippi Alluvial Valley, Southeastern Missouri
- Michael J. O'Brien, R. Lee Lyman, Thomas D. Holland
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- Journal:
- Quaternary Research / Volume 31 / Issue 1 / January 1989
- Published online by Cambridge University Press:
- 20 January 2017, pp. 83-93
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Archaeological materials in several prairie mounds in the northern Western Lowlands of southeastern Missouri indicate that mounds began forming prior to ca. 5000-3000 yr B.P. The mounds subsequently were inundated and built up to their modern configuration by aggradational and reworking processes. Human use of the mounds may have been tied to exploitation of aquatic animals residing in backwater habitats during periods of prolonged flooding. Principal features of the sampled portion of the mound field include preoccupation topographic highs, early occupation (ca. 5000-3000 yr B.P.) layers that drape the topographic highs, and later occupation (ca. 3000-950 yr B.P.) layers that drape earlier occupation layers and extend onto intermound areas.
“Since I Must Please Those Below”: Human Skeletal Remains Research and the Law
- Thomas D. Holland
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- Journal:
- American Journal of Law & Medicine / Volume 41 / Issue 4 / November 2015
- Published online by Cambridge University Press:
- 06 January 2021, pp. 617-655
- Print publication:
- November 2015
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The ethics of non-invasive scientific research on human skeletal remains are poorly articulated and lack a single, definitive analogue in western law. Laws governing invasive research on human fleshed remains, as well as bio-ethical principles established for research on living subjects, provide effective models for the establishment of ethical guidelines for non-invasive research on human skeletal remains. Specifically, non-invasive analysis of human remains is permissible provided that the analysis and collection of resulting data (1) are accomplished with respect for the dignity of the individual, (2) do not violate the last-known desire of the deceased, (3) do not adversely impact the right of the next of kin to perform a ceremonious and decent disposal of the remains, and (4) do not unduly or maliciously violate the privacy interests of the next of kin.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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List of Contributors
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- By Adam K. Anderson, Jorge Armony, Anthony P. Atkinson, Sonia Bishop, Carolin Brück, Roberto Cabeza, Frances S. Chen, Hugo D. Critchley, Mauricio R. Delgado, Ricardo de Oliveira-Souza, Gregor Domes, Judith Domínguez-Borràs, Joseph E. Dunsmoor, Thomas Ethofer, Dominic S. Fareri, Lesley K. Fellows, Sophie Forster, Katherine Gardhouse, Nathalie George, Jay A. Gottfried, Jung Eun Han, Ahmad R. Hariri, Neil A. Harrison, Markus Heinrichs, Alisha C. Holland, Andreas Keil, Elizabeth A. Kensinger, Johanna Kissler, Olga Klimecki, Stefan Koelsch, Sylvia D. Kreibig, Benjamin Kreifelts, Robert Kumsta, Kevin S. LaBar, Eamon J. McCrory, Aprajita Mohanty, Jorge Moll, John P. O’Doherty, Leticia Oliveira, Mirtes Pereira, Luiz Pessoa, K. Luan Phan, Pierre Rainville, David Sander, Annett Schirmer, Catherine L. Sebastian, Tania Singer, Chandra Sekhar Sripada, Peggy L. St. Jacques, Essi Viding, Patrik Vuilleumier, Dirk Wildgruber, Amy Winecoff, Roland Zahn
- Edited by Jorge Armony, McGill University, Montréal, Patrik Vuilleumier, Université de Genève
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- Book:
- The Cambridge Handbook of Human Affective Neuroscience
- Published online:
- 05 February 2013
- Print publication:
- 21 January 2013, pp xi-xii
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A Method to Improve Activation of Implanted Dopants in SiC
- O. W. Holland, D. K. Thomas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 650 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, R5.3
- Print publication:
- 2000
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Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) are achieved by using the highest possible processing temperature. This includes implantation at > 600°C followed by furnace annealing at temperatures as high as 1750°C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%–50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the surface, as well as degradation of the electrical properties of devices. A novel approach for increasing activation of implanted dopants in SiC and lowering the activation temperature will be discussed. This approach utilizes the manipulation of the ion-induced damage to enhance activation of implanted dopants. It will be shown that nearly amorphous layers containing a small amount of residual crystallinity can be recrystallized at temperatures below 900°C with little residual damage. It will be shown that recrystallization traps a high fraction of the implanted dopant residing within the amorphous phase (prior to annealing) onto substitutional sites within the SiC lattice.
Optimization of the Ion-Cut Process in Si and SiC
- O. W. Holland, D. K. Thomas, R. B. Gregory
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- Journal:
- MRS Online Proceedings Library Archive / Volume 647 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, O6.1
- Print publication:
- 2000
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H+-implantation is the basis for an ion-cut process, which combines hydrophilic wafer bonding, to produce heterostructures over a wide range of materials. This process has been successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of implantation to produce thin-film separation was studied by investigation of H+-induced exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen chemistry from that of implant damage. Damage is manipulated independently of H+ dosage by a variety of techniques ranging from elevated temperature irradiation to a two-step implantation scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate that such schemes can significantly reduce the critical dose for exfoliation.
The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide
- R. B. Gregory, O. W. Holland, D. K. Thomas, T. A. Wetteroth, S. R. Wilson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 33
- Print publication:
- 1999
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Exfoliation of SiC by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which. when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. SiC thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of SiC is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implantinduced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H_ implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiCOI which is sufficiently free of defects and, thus, more easily electrically activated.
Parasites, Porotic Hyperostosis, and the Implications of Changing Perspectives
- Thomas D. Holland, Michael J. O'Brien
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- Journal:
- American Antiquity / Volume 62 / Issue 2 / April 1997
- Published online by Cambridge University Press:
- 20 January 2017, pp. 183-193
- Print publication:
- April 1997
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Cribra orbitalia and porotic hyperostosis traditionally have been viewed (at least by archaeologists) as indicators of chronic iron deficiency anemia resulting from a dependency upon maize. Recent interpretations, however, have sought to explain these conditions as an evolutionary, adaptive response to intestinal parasites rather than as a consequence of poor nutrition. Thus diet is eliminated as a contributing factor. This model, however, adopts too simplistic a view of evolution. Furthermore, it concomitantly severs the well-documented link that exists between cranial lesions and cereal-based subsistence. A more realistic approach would be to incorporate both diet and pathogens (bacterial as well as parasitic) into a symbiotic model that acknowledges the important role of parasites in the etiology of cribra orbitalia and porotic hyperostosis, while maintaining the diagnostic value of these conditions as hallmarks of early agriculture.
The Role of Adaptation in Archaeological Explanation
- Michael J. O'Brien, Thomas D. Holland
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- Journal:
- American Antiquity / Volume 57 / Issue 1 / January 1992
- Published online by Cambridge University Press:
- 20 January 2017, pp. 36-59
- Print publication:
- January 1992
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Adaptation, a venerable icon in archaeology, often is afforded the vacuous role of being an ex-post-facto argument used to "explain" the appearance and persistence of traits among prehistoric groups—a position that has seriously impeded development of a selectionist perspective in archaeology. Biological and philosophical definitions of adaptation—and by extension, definitions of adaptedness—vary considerably, but all are far removed from those usually employed in archaeology. The prevailing view in biology is that adaptations are features that were shaped by natural selection and that increase the adaptedness of an organism. Thus adaptations are separated from other features that may contribute to adaptedness but are products of other evolutionary processes. Analysis of adaptation comprises two stages: showing that a feature was under selection and how the feature functioned relative to the potential adaptedness of its bearers. The archaeological record contains a wealth of information pertinent to examining the adaptedness of prehistoric groups, but attempts to use it will prove successful only if a clear understanding exists of what adaptation is and is not.
Fertility in the Prehistoric Midwest: A Critique of Unifactorial Models
- Thomas D. Holland
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- Journal:
- American Antiquity / Volume 54 / Issue 3 / July 1989
- Published online by Cambridge University Press:
- 20 January 2017, pp. 614-625
- Print publication:
- July 1989
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Cultivation of starchy seeds must be recognized as a complex of variables upon which selection operates and of which population growth is the inherent measure of success. Early weaning through the use of starchy-seed gruels, though recently proposed as the principal factor in the increase of fertility, is insufficient as a prime mover for population growth in west-central Illinois during the Middle and Late Woodland periods.