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A Method to Improve Activation of Implanted Dopants in SiC

Published online by Cambridge University Press:  21 March 2011

O. W. Holland  and
D. K. Thomas
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
D. K. Thomas
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
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Abstract

Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) are achieved by using the highest possible processing temperature. This includes implantation at > 600°C followed by furnace annealing at temperatures as high as 1750°C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%–50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the surface, as well as degradation of the electrical properties of devices. A novel approach for increasing activation of implanted dopants in SiC and lowering the activation temperature will be discussed. This approach utilizes the manipulation of the ion-induced damage to enhance activation of implanted dopants. It will be shown that nearly amorphous layers containing a small amount of residual crystallinity can be recrystallized at temperatures below 900°C with little residual damage. It will be shown that recrystallization traps a high fraction of the implanted dopant residing within the amorphous phase (prior to annealing) onto substitutional sites within the SiC lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R5.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 “Materials for High Temperature Semiconductor Devices,” by the Committee on Materials for High Temperature Semiconductor Devices, NMAB-747, (National Academy Press, Washington, 1995).Google Scholar
2 See for example “Fundamentals of SiC-Based Device Processing,” Melloch, M. R. and Cooper, J. A. Jr., MRS Bulletin, March 1997, p. 42, and References within.Google Scholar
3. “Implantation and Electrical Activation of Dopants into Monocrystalline Silicon Carbide,” Edmond, John A. and Davis, Robert F., U.S. Patent 5,087,576, 1992.Google Scholar
4. Capano, M. A., Ryu, S., Melloch, M. R., Cooper, J. A. Jr., and Buss, M. R., J. Electron. Mater. 27, 370 (1998); and Mulpuri V. Rao, Jesse B. Tucker, M. C. Ridgway, O. W. Holland, N. Papanicolau and J. Mittereder, J. Appl. Phys. 86, 752 (1999).Google Scholar
5. Gardner, Jason A., Edwards, Andrew, Rao, Mulpuri V., Papanicolaou, N., Keiner, G., Holland, O. W., Capano, M.A., Ghezzo, M., and Kretchmer, J., J. Appl. Phys. 83, 5118 (1998).Google Scholar
6. Tone, Kiyoshi, IEEE Transactions on Electron Devices, 46, 612 (1999).Google Scholar
7. Tseng, W. F., Gyulai, J., Koji, T., Lau, S. S., Roth, J., and Mayer, J. W., Nucl. Instr. and Meth. 149, 615 (1978).Google Scholar
8. Höfgen, A., Heera, V., Eichhorn, F., and Skorupa, W., J. Appl. Phys. 84, 4769 (1998).Google Scholar
9. Holland, O. W., Fathy, D., Narayan, J., and Oen, O. S., Radiat. Eff. 90, 127 (1985).Google Scholar
10. Haynes, T. E. and Holland, O. W., Nucl. Instr. and Meth. B80/81,901 (1993).Google Scholar
11. Moore, F. G., Dietrich, H. B., Dobisz, E. A., and Holland, O. W., Appl. Phys. Lett. 57, 911 (1990).Google Scholar
12. Haynes, T. E. and Holland, O. W., Appl. Phys. Lett. 59, 452 (1991).Google Scholar
13. Chadderton, Lewis T., Radiat. Eff. 8, 77 (1971).Google Scholar
14. Snead, L. L., Zinkle, S. J., Eatherly, W. S., Hensley, D. K., Vaughn, N. L., Jones, J. W., in Microstructural Processes in Irradiated Materials, MRS Symposium Proceedings, edited by Zinkle, Steven J., Lucas, Glenn E., Ewing, Rodney C. and Williams, James S. (MRS, Pittsburgh, 1999), Vol. 540, p. 165.Google Scholar
15. Holland, O. W., White, C. W., El-Ghor, M. K., and Budai, J. D., J. Appl. Phys. 68, 2081 (1990).Google Scholar
16. Narayan, J. and Holland, O. W., Phys. Status Solidi A, 73 (1982) 225.Google Scholar
17. Rao, Mulpuri V., Gardner, Jason A., Chi, P. H., Holland, O. W., Kelner, G., Kretchmer, J. and Ghezzo, M., J. Appl. Phys. 81, 6635 (1997).Google Scholar