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BOUT++: Recent and current developments
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- B. D. Dudson, A. Allen, G. Breyiannis, E. Brugger, J. Buchanan, L. Easy, S. Farley, I. Joseph, M. Kim, A. D. McGann, J. T. Omotani, M. V. Umansky, N. R. Walkden, T. Xia, X. Q. Xu
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- Journal of Plasma Physics / Volume 81 / Issue 1 / January 2015
- Published online by Cambridge University Press:
- 15 October 2014, 365810104
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BOUT++ is a 3D nonlinear finite-difference plasma simulation code, capable of solving quite general systems of Partial Differential Equations (PDEs), but targeted particularly on studies of the edge region of tokamak plasmas. BOUT++ is publicly available, and has been adopted by a growing number of researchers worldwide. Here we present improvements which have been made to the code since its original release, both in terms of structure and its capabilities. Some recent applications of these methods are reviewed, and areas of active development are discussed. We also present algorithms and tools which have been developed to enable creation of inputs from analytic expressions and experimental data, and for processing and visualisation of output results. This includes a new tool Hypnotoad for the creation of meshes from experimental equilibria. Algorithms have been implemented in BOUT++ to solve a range of linear algebraic problems encountered in the simulation of reduced Magnetohydrodynamics (MHD) and gyro-fluid models: A preconditioning scheme is presented which enables the plasma potential to be calculated efficiently using iterative methods supplied by the PETSc library (the Portable, Extensible Toolkit for Scientific Computation) (Balay et al. 2014), without invoking the Boussinesq approximation. Scaling studies are also performed of a linear solver used as part of physics-based preconditioning to accelerate the convergence of implicit time-integration schemes.
Contributors
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- By Michael H. Allen, Leora Amira, Victoria Arango, David W. Ayer, Helene Bach, Christopher R. Bailey, Ross J. Baldessarini, Kelsey Ball, Alan L. Berman, Marian E. Betz, Emily A. Biggs, R. Warwick Blood, Kathleen T. Brady, David A. Brent, Jeffrey A. Bridge, Gregory K. Brown, Anat Brunstein Klomek, A. Jacqueline Buchanan, Michelle J. Chandley, Tim Coffey, Jessica Coker, Yeates Conwell, Scott J. Crow, Collin L. Davidson, Yogesh Dwivedi, Stacey Espaillat, Jan Fawcett, Steven J. Garlow, Robert D. Gibbons, Catherine R. Glenn, Deborah Goebert, Erica Goldstein, Tina R. Goldstein, Madelyn S. Gould, Kelly L. Green, Alison M. Greene, Philip D. Harvey, Robert M. A. Hirschfeld, Donna Holland Barnes, Andres M. Kanner, Gary J. Kennedy, Stephen H. Koslow, Benoit Labonté, Alison M. Lake, William B. Lawson, Steve Leifman, Adam Lesser, Timothy W. Lineberry, Amanda L. McMillan, Herbert Y. Meltzer, Michael Craig Miller, Michael J. Miller, James A. Naifeh, Katharine J. Nelson, Charles B. Nemeroff, Alexander Neumeister, Matthew K. Nock, Jennifer H. Olson-Madden, Gregory A. Ordway, Michael W. Otto, Ghanshyam N. Pandey, Giampaolo Perna, Jane Pirkis, Kelly Posner, Anne Rohs, Pedro Ruiz, Molly Ryan, Alan F. Schatzberg, S. Charles Schulz, M. Katherine Shear, Morton M. Silverman, April R. Smith, Marcus Sokolowski, Barbara Stanley, Zachary N. Stowe, Sarah A. Struthers, Leonardo Tondo, Gustavo Turecki, Robert J. Ursano, Kimberly Van Orden, Anne C. Ward, Danuta Wasserman, Jerzy Wasserman, Melinda K. Westlund, Tracy K. Witte, Kseniya Yershova, Alexandra Zagoloff, Sidney Zisook
- Edited by Stephen H. Koslow, University of Miami, Pedro Ruiz, University of Miami, Charles B. Nemeroff, University of Miami
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- A Concise Guide to Understanding Suicide
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- 05 October 2014
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- 18 September 2014, pp vii-x
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GISAXS study on the annealing behavior of sputtered HfO2 thin films
- G. S. Belo, F. Nakagomi, P. E. N. de Souza, S. W. da Silva, D. A. Buchanan
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- MRS Online Proceedings Library Archive / Volume 1528 / 2013
- Published online by Cambridge University Press:
- 21 March 2013, mrsf12-1528-vv10-02
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- 2013
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Grazing Incidence Small-Angle X-ray Scattering (GISAXS) is a versatile technique for the analysis of nano and micro thin films surfaces. The scattering data depend strongly on the form and distribution of the scattering objects. In the present work GISAXS is used to study hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition processes and post-deposition annealing conditions. Two distinct types of 15 nm thick samples were produced using different sputtering targets and different gas mixtures. The GISAXS results show that the ellipsoids that compose the thin films present a reduction in their size for both samples sets. For the sputtered Hf metal target samples, the ellipsoid diameter value shifted from 9 nm (as-deposited) to 6 nm following a 800 °C thermal treatment. For the sputtered HfO2 target samples the diameter value shifts from 19 nm (as-deposited) to 3 nm after a 800 °C anneal in oxygen. The size distribution, for both sets of samples, follows a Gaussian distribution function.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
- E. S. Hellman, D. N. E. Buchanan, C. H. Chen
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e43
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- 1998
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The (7×7) reconstructed (1 1 1) surface of silicon is found to be an excellent surface for the nucleation of epitaxial aluminum nitride, despite the +23.4% misfit in the AlN/Si system. AlN nucleated above the (7×7) to (1×1) transition temperature (830°C) is found to contain 30° misoriented grains, while films nucleated below the transition temperature are single orientation. Optimized aluminum nitride films grown on (7×7) silicon surfaces make excellent substrates for GaN heteroepitaxy.
Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
- L.-L. Chao, G. S. Cargill, C. Kothandaraman, D. Cyr, G. Flynn, E. S. Hellman, D. Wiesmann, D. N. E. Buchanan, I. Brener
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 1997
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Complex faceted features of micrometer sizes and with intense luminescence rise 200-300 nm above the surface of a GaN thin film grown by molecular beam epitaxy on (0001) sapphire. Cathodoluminescence measurements at room temperature and at 8K were used to investigate the luminescence properties of these microfeatures in comparison with those of the background GaN material. The morphology of the micro-features was studied by scanning electron microscopy and by atomic force microscopy.
GaN and related compounds have been considered as promising materials for light emitting devices in the short wavelength visible and UV spectral regions because of their direct, wide band gaps and high luminescence efficiency. Remarkable, rapid success has been achieved in developing devices based on III-V nitrides, which allows these material systems to rival other systems under development [1]. Blue-green LEDs fabricated from InGaN/AlGaN double-heterostructure layers on sapphire substrates by Nichia Chemical Industries in Japan are commercially available, despite the presence of high extended defect densities in the 1010 /cm2 range [2]. In December 1995, an important milestone in the development of nitride lasers was reached; Nakamura et al. in Nichia demonstrated the first nitride-based laser diode which operated at 417 nm under pulsed conditions at room temperature [3].
The morphology and spatial distribution of luminescence in GaN thin films have been investigated by several research groups [4], [5], [6], although most efforts have been directed to developing appropriate growth conditions for improved film quality. From observations by scanning electron microscopy (SEM) and atomic force microscopy (AFM), Trager-Cowan et al. described an MBE-grown GaN film which contained an assembly of oriented hexagonal crystallites rising above a background of polycrystalline or amorphous material [4]. All the crystallites, oriented in a similar fashion, had roughly the same sizes, 1 or 2 μm across a hexagonal face and about 1 μm high. These crystallites were much brighter than the surrounding background material in panchromatic low-temperature cathodoluminescence (CL) images. Trager-Cowan et al. concluded that the crystallites were of better quality than the background material. They also observed a green emission band, attributed to impurities, which became weaker for higher electron beam voltages, generating luminescence from deeper in the film. From this observation, they concluded that higher quality material is located closer to the film's outer surface. Spatial variation of the luminescence efficiency from MOCVD-grown films has also been observed by Ponce et al[5]. in their room-temperature CL microscopy studies. Their results showed significant nonuniformities in both the band-edge and yellow band emissions. Although they reported no faceted island structures, one of their samples had “marked surface features” and consisted of hexagonal crystals 10 to 50 μm in diameter. The crystals gave strong band-to-band (364 nm) luminescence.
In this paper, the morphology of a GaN film grown on (0001) sapphire by MBE is characterized by SEM and AFM, and CL measurements are used to investigate the luminescence properties of the film at room temperature and at 8K. Some regions of this film are similar to the one described by Trager-Cowan et al. [4] in having micron sized, brightly luminescent islands. The hexagonal facet angles and bright luminescence of islands in our film also resemble the larger scale, more regularly shaped hexagonal crystals of Ponce et al. [5]. These regions lie on the boundary of excess gallium growth conditions. Our results differ from those of Trager-Cowan in terms of the island morphologies and the spectral character of luminescence from the islands and from the background material. Possible causes of the large variations in luminescence efficiency are discussed.
Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
- E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e30
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- 1997
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The (1 0 0) face of γ-LiAlO2 has attracted attention as a possible substrate for GaN epitaxial growth. This is partly because this face has an excellent lattice and structural match to (1 0 0) GaN. This orientation would have a misfit of only −1.4% along the c-direction and −0.1% along the b-direction of LiAlO2. We find that in practice this orientation relationship does not occur; instead, (0 0 0 1) oriented GaN grows with a small tilt (0.6° towards the c-direction) between the film and substrate. Although the misfit along the substrate b direction is large (−6.3%) for this orientation, the tilt perfectly accommodates the −1.4% misfit in the c direction. We present characterization of these films by RHEED, X-ray diffraction, and TEM. We propose that the tilt is driven by a reduction of interface energy which occurs in polar, incoherent interfaces.
Growth of Ga-face and N-face GaN films using ZnO Substrates
- E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e16
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- 1996
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We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.
ScAlMgO4: an Oxide Substrate for GaN Epitaxy
- E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, E. H. Hartford
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e1
- Print publication:
- 1996
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We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.
ScAlMgO4: An Oxide Substrate for GaN Epitaxy
- E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, E. H. Hartford, Jr.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 51
- Print publication:
- 1995
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We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.
Environmental Applications of Xanes: Speciation of Tc In Cement After Chemical Treatment and Se After Bacterial Uptake
- D. K. Shuh, N. Kaltsoyannis, J. J. Bucher, N. M. Edelstein, S. B. Clark, H. Nitsche, I. Almahamid, P. Torretto, W. Lukens, K. Roberts, B. C. Yee, D. E. Carlson, A. Yee, B. B. Buchanan, T. Leighton, W.-S. Yang, J. C. Bryan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 344 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 323
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- 1994
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XANES (X-ray Absorption Near Edge Spectroscopy) has been employed to evaluate the efficacy of a process designed to encapsulate and reduce TcO4- in cement matrices, thereby immobilizing Tc. The oxidation state of Se following bioremediation of Se by bacteria has also been determined by XANES. The XANES measurements were performed at the Stanford Synchrotron Radiation Laboratory (SSRL) and the National Synchrotron Light Source (NSLS) at the respective K edges of Tc (21.0 keV) and Se (12.7 keV). Comparison of the XANES spectra of Tc in untreated cement to Tc in slag treated cement and to the chemical shifts of reference materials, shows that the oxidation state of Tc is the same in both cements. Thus, the addition of a reducing agent to the cement formulation does not significantly reduce the TcO4-. The common soil bacterium, Bacillus subtilis, is known to incorporate Se on or within the cell wall when exposed to a Se(IV) solution. The Se XANES spectra of B. subtilis, as well as bacillus isolated from selenium rich soil, show that the organisms reduce selenite to the red allotrope of elemental Se.
An open letter to the President
- Louis Appleby, Glyn Lewis, R. H. Cawley, Isaac Marks, Pamela Taylor, Raymond Levy, Klaus Bergmann, Nick Temple, Brian Toone, Stephen Wolkind, Eileen Joyce, Michael Gill, E. Guinness, Michael Farrell, V. L. Nimgaonkar, Deborah Chee, L. Mynors-Wallis, Peter Jones, Penny Thompson, Rachel Brown, H. Ring, Claire Gerada, Jenny Bearn, S. G. Potts, B. C. Beats, Lyn Pilowsky, Judith Jackson, G. F. Searle, Keith Lloyd, Helena Fox, Parimela Moodley, Tony Maden, S. W. Lewis, M. W. Orrell, D. Murphy, W. J. Levy, Brian Green, Alex Buchanan, Marian J. Perkins, Peter Misch, Gillian Mezey, M. Murphy, Anthony David, Robert Kerwin, Shirine Pezeshgi, M. Abas, P. Silverstone, J. H. Stone, G. O. 'Sullivan, R. Araya, R. Ball, E. Palazidou, Jane Milton, Anthony J. Pelosi, Janet Carrick, Dinesh Bhugra, Chris Hollis, Mark Berelowitz, N. R. Fisher, Deborah Brooke, Charles Hindler, Malcolm Battersby, Abigail Seltzer
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- Journal:
- Psychiatric Bulletin / Volume 12 / Issue 12 / December 1988
- Published online by Cambridge University Press:
- 02 January 2018, p. 554
- Print publication:
- December 1988
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