Research Article
Anisotropic Dielectric Properties of GaN Epilayers on Sapphire
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- 01 February 2011, Y5.48
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Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy
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- 01 February 2011, Y12.1
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GaN Epitaxial Growth Process at High Growth Temperature by NH3 Source Molecular Beam Epitaxy
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- 01 February 2011, Y10.67
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Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition
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- 01 February 2011, Y5.16
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Optical and Electrical Properties of Low to Highly-Degenerate InN Films
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- 01 February 2011, Y12.7
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Strain evolution and phonons in AlN/GaN superlattices
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- 01 February 2011, Y5.60
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Anomalous Composition Dependence of Optical Energies of MBE-grown InGaN
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- 01 February 2011, Y5.47
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ZnO/AlGaN ultraviolet light emitting diodes.
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- 01 February 2011, Y3.9
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High Current Injection to a UV-LED grown on a Bulk AlN Substrate
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- 01 February 2011, Y1.3
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Design and Fabrication of GaN-based Permeable-Base Transistors
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- 01 February 2011, Y10.21
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Microstructure of Nonpolar a-Plane GaN Grown on (1120) 4H-SiC Investigated by TEM.
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- 01 February 2011, Y5.28
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Luminescence Properties of Eu ion-implanted GaN
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- 01 February 2011, Y5.7
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Optical evaluation of pretreated InGaN quantum well structures
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- 01 February 2011, Y5.59
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GaN quantum dot UV light emitting diode
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- 01 February 2011, Y1.4
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HNO3 treatment of sapphire for management of GaN polarity in MOCVD method: Comparison of the properties of +c and –c GaN region
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- 01 February 2011, Y3.3
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Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy
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- 01 February 2011, Y10.59
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The Structure of Dislocations in GaN Grown by MBE as a Function of the Gallium to Nitrogen Ratio
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- 01 February 2011, Y9.3
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Above and below Bandgap Excitation of Er-defect Complexes and Isolated Er in Er-implanted GaN
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- 01 February 2011, Y8.3
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Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
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- 01 February 2011, Y10.36
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High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD
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- 01 February 2011, Y1.10
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