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Cortisol plasma levels are associated with serotonin - 1A receptor binding in postmenopausal women
- G. Kranz, A. Hahn, J. Ungersböck, U. Kaufmann, P. Stein, P. Baldinger, A. Höflich, S. Zgud, M. Mitterhauser, W. Wadsak, S. Kasper, R. Lanzenberger
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- Journal:
- European Psychiatry / Volume 26 / Issue S2 / March 2011
- Published online by Cambridge University Press:
- 16 April 2020, p. 933
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Introduction
Alterations of the serotonin-1A receptor (5-HT1A) and the hypothalamic-pituitary-adrenal (HPA) axis have been reported in depression and anxiety disorders. We previously showed a strong negative correlation between cortisol plasma levels and 5-HT1A receptor binding potential (BP) in patients with social anxiety disorder but not in healthy controls using PET [1].
ObjectivesTo investigate the relationship of cortisol and the 5-HT1A BP in postmenopausal women, a population that is at increased risk of suffering from depressive symptoms.
MethodsSubjects: 19 postmenopausal women, aged 55.26 ± 4.98, medication free, no current substance abuse or hormone replacement therapy.
PETDynamic measurements (50 frames, 90 min) were performed using the radioligand [carbonyl-11C]WAY100635 and a GE-Advance scanner. PET data were normalized to a ligand-specific template [2]. Regions-of-interest (ROI) were defined as given in [3]. TACs within ROIs were averaged and the 5-HT1A receptor BP was quantified using Logan-plot and PMOD 3.1. Measurement of total cortisol plasma levels was done using electrochemoluminescence.
ResultsWe found negative correlations between cortisol and 5-HT1A BP in the midbrain (Spearman's rs = −0.54, p = 0.02), the median raphe nucleus (rs = −0.47, p = 0.04) and the nucleus accumbens (rs = −0.505, p = 0.03).
ConclusionsIn line with our previous findings [1], the observed negative association between cortisol plasma levels and 5-HT1A BP might reflect an increased vulnerability for mood disorders in postmenopausal women.
1597 – Alterations In Serotonin Transporter Asymmetry In Male-to-female Transsexuals Measured By Brain Pet
- G.S. Kranz, A. Hahn, D. Haeusler, C. Philippe, U. Kaufmann, W. Wadsak, M. Mitterhauser, S. Kasper, R. Lanzenberger
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- European Psychiatry / Volume 28 / Issue S1 / 2013
- Published online by Cambridge University Press:
- 15 April 2020, 28-E883
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Introduction
The serotonergic system modulates brain functions that are considered to underlie affective states, emotion and cognition. Several lines of evidence point towards a strong lateralization of these mental processes, indicating similar asymmetries in associated neurotransmitter systems.
ObjectivesTo investigate a potential brain asymmetry of the serotonin transporter (SERT) distribution using Positron Emission Tomography (PET).
AimsAs brain asymmetries differ between sexes, we aimed to compare serotonin transporter asymmetry between females, males and male-to-female transsexuals whose brains are considered to be partly feminized.
Methods36 subjects aged 19-54 years (9 female controls, 13 male controls and 14 male-to-female transsexuals) were measured with PET and [11C]DASB. Whole-brain voxel-wise SERT binding potential (BPND) maps were computed using a tracer-specific symmetric template. Statistics comprised repeated measures ANOVA with group as the between subjects factor, voxel-wise SERT asymmetry as repeated factor and group*asymmetry as interaction term.
ResultsSERT binding in all groups showed both strong left and rightward asymmetries in several cortical and subcortical structures including temporal and frontal cortices, anterior cingulate, hippocampus, caudate and thalamus (p< 0.05 FDRcorrected). Further, male controls showed a rightward asymmetry in the midcingulate cortex (p>0.05 FDR-corrected) which was absent in females and male-to-female transsexuals.
ConclusionsOur data support the notion of a lateralized serotonergic system, which is in line with previous findings of asymmetric serotonin-1A receptor distributions, extracellular serotonin concentrations, serotonin turnover and uptake. The absence of serotonin transporter asymmetry in the midcingulate in male-to-female transsexuals may be attributed to an absence of brain masculinization in this region.
STRICTLY POSITIVE SOLUTIONS FOR ONE-DIMENSIONAL NONLINEAR PROBLEMS INVOLVING THE $p$-LAPLACIAN
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- U. KAUFMANN, I. MEDRI
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- Bulletin of the Australian Mathematical Society / Volume 89 / Issue 2 / April 2014
- Published online by Cambridge University Press:
- 06 September 2013, pp. 243-251
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- April 2014
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Let $\Omega $ be a bounded open interval, and let $p\gt 1$ and $q\in (0, p- 1)$. Let $m\in {L}^{{p}^{\prime } } (\Omega )$ and $0\leq c\in {L}^{\infty } (\Omega )$. We study the existence of strictly positive solutions for elliptic problems of the form $- (\vert {u}^{\prime } \mathop{\vert }\nolimits ^{p- 2} {u}^{\prime } ){\text{} }^{\prime } + c(x){u}^{p- 1} = m(x){u}^{q} $ in $\Omega $, $u= 0$ on $\partial \Omega $. We mention that our results are new even in the case $c\equiv 0$.
INHOMOGENEOUS PERIODIC PARABOLIC PROBLEMS WITH INDEFINITE DATA
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- T. GODOY, U. KAUFMANN
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- Journal:
- Bulletin of the Australian Mathematical Society / Volume 84 / Issue 3 / December 2011
- Published online by Cambridge University Press:
- 06 September 2011, pp. 516-524
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- December 2011
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Let Ω⊂ℝN be a smooth bounded domain and let f⁄≡0 be a possibly discontinuous and unbounded function. We give a necessary and sufficient condition on f for the existence of positive solutions for all λ>0 of Dirichlet periodic parabolic problems of the form Lu=h(x,t,u)+λf(x,t), where h is a nonnegative Carathéodory function that is sublinear at infinity. When this condition is not fulfilled, under some additional assumptions on h we characterize the set of λs for which the aforementioned problem possesses some positive solution. All results remain true for the corresponding elliptic problems.
Symptomatic remission and neurocognitive functioning in patients with schizophrenia
- A. Hofer, T. Bodner, A. Kaufmann, G. Kemmler, U. Mattarei, N. M. Pfaffenberger, M. A. Rettenbacher, E. Trebo, N. Yalcin, W. W. Fleischhacker
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- Psychological Medicine / Volume 41 / Issue 10 / October 2011
- Published online by Cambridge University Press:
- 22 March 2011, pp. 2131-2139
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Background
A cross-sectional study was conducted in participants with schizophrenia to explore a potential association between the patients' remission status and neurocognitive functioning and to examine whether these factors have an impact on functional outcome.
MethodPsychopathological symptoms were rated by means of the Positive and Negative Syndrome Scale with symptom remission being assessed by applying the severity component of the recently proposed remission criteria. Tests for the cognitive battery were selected to cover domains known to be impaired in patients with schizophrenia. Next to pre-morbid intelligence, attention performance, executive functioning, verbal fluency, verbal learning and memory, working memory and visual memory were assessed. The joint effect of remission status and neurocognitive functioning on treatment outcome was investigated by logistic regression analysis.
ResultsOut of 140 patients included in the study, 62 were symptomatically remitted. Mean age, education and sex distribution were comparable in remitted and non-remitted patients. Remitted patients showed significantly higher values on tests of verbal fluency, alertness and optical vigilance. Both symptomatic remission as well as performance on tests of working memory and verbal memory had a significant effect on the patients' employment status.
ConclusionsIn the present study neuropsychological measures of frontal lobe functioning were associated with symptomatic remission from schizophrenia. In addition, both symptomatic remission and performance on tests of working memory and verbal memory had a significant effect on the patients' employment status. Longitudinal follow-up data are needed to determine how the associations of these determinants of functional outcome interact and change over time.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. 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Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Some results on principal eigenvalues for periodic parabolic problems with weight
- U. Kaufmann
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- Bulletin of the Australian Mathematical Society / Volume 68 / Issue 2 / October 2003
- Published online by Cambridge University Press:
- 17 April 2009, pp. 177-184
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- October 2003
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Let Ω ⊂ ℝN be a bounded domain. We study existence and uniqueness of principal eigenvalues for the Dirichlet periodic parabolic problem with weight Lu = λmu in Ω × ℝ when the independent coefficient of the differential operator L is not necessarily positive.
Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures
- D. Behr, R. Niebuhr, H. Obloh, J. Wagner, K. H. Bachem, U. Kaufmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 213
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- 1997
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We report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.
Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire
- R. Niebuhr, K. H. Bachem, D. Behr, C. Hoffmann, U. Kaufmann, Y. Lu, B. Santic, J. Wagner, M. Arlery, J. L. Rouviere, H. Jürgensen
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 769
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- 1996
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AlGaN/GaN single quantum wells (QW) have been grown on 2” sapphire substrates (c-plane) by metal-organic chemical vapor deposition (MOCVD). The well width was varied between 20 and 40 Å for barriers containing 4 % and 16 % of aluminium. Cathodoluminescence (CL) and Photoluminescence (PL) spectra of the samples show, as expected, a shift of the quantum well emission to higher energies with decreasing well width, whereas the barrier luminescence stays at constant energy. Examination of the QWs by resonant Raman spectroscopy tuned to the gap of the well, clearly shows the GaN A1(LO) phonon besides the AlGaN A1(LO) phonon from the barrier. For a well width of 20 Å we observe a shift of the A1(LO) GaN phonon indicating a certain degree of intermixing at the GaN/AlGaN interface. Atomic Force Microscopy (AFM) reveals that the layers are growing in a 2-dimensional step flow growth mode with step heights of 3 and 6 Å corresponding to mono- and biatomic steps. High Resolution Transmission Electron Microscopy (HRTEM) micrographs of the 40 Å well show a very low interface roughness of 1–2 atomic layers.
Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD
- U. Kaufmann, M. Kunzer, C. Merz, I. Akasaki, H. Amano
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 633
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- 1995
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We have studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) un-doped, n-doped and p-doped thin wurtzite GaN layers grown by metal-organic chemical vapor deposition on sapphire substrates. From the PL data for free excitons an accurate value of the free A-type exciton binding energy and a more accurate estimate for the hole effective mass is deduced. The localization energies of the Mg and the Zn neutral acceptor bound excitons are found to be in good agreement with Haynes’ rule. A sharp emission line, assigned to free electron recombination at a 116 meV shallow acceptor, together with three additional weak zero-phonon-lines (ZPLs), assigned to distant donor-acceptor (DA) pairs, are reported for the first time. The chemical nature of this acceptor and that of three residual donors, inferred from the DA pair ZPLs, is discussed. The effects of strain in thin GaN layers on a dissimilar substrate like sapphire are emphasized with respect to the energetic position of narrow PL lines. The ODMR data obtained for undoped, Mg-doped and Zn-doped GaN layers provide insight into the recombination mechanisms responsible for the broad yellow (2.25 eV), the violet (3.15 eV) and the blue (2.8 eV) PL bands, respectively. The ODMR results for Mg and Zn also show that these acceptors do not behave effective mass like and indicate that the acceptor hole is mainly localized in the nearest neighbor shell surrounding the acceptor core.
Photo-EPR and Spatially Resolved EPR of ASGa in As-Grown GaAs
- M. Baeumler, U. Kaufmann, J. Windscheif
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- MRS Online Proceedings Library Archive / Volume 46 / 1985
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- 28 February 2011, 201
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- 1985
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The photo-response of the ASGa+ antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown GaAs as a function of illumination time and photon energy. The results establish a firm and positive correlation between ASGa and the deep donor level EL2. Spatially resolved EPR measurements show that the ASGa concentration can fluctuate by about a factor of two across a 2-inch semiinsulating GaAs wafer.