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Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

Published online by Cambridge University Press:  10 February 2011

D. Behr ,
R. Niebuhr ,
H. Obloh ,
J. Wagner ,
K. H. Bachem  and
U. Kaufmann
D. Behr
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
R. Niebuhr
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
H. Obloh
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
K. H. Bachem
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
U. Kaufmann
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany, behr@iaf.fhg.de
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Abstract

We report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 213
Copyright
Copyright © Materials Research Society 1997

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References

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