Crossref Citations
This Book has been
cited by the following publications. This list is generated based on data provided by Crossref.
Allenspach, M.
Brews, J.R.
Mouret, I.
Schrimpf, R.D.
and
Galloway, K.F.
1994.
Evaluation of SEGR threshold in power MOSFETs.
IEEE Transactions on Nuclear Science,
Vol. 41,
Issue. 6,
p.
2160.
Betser, Y.
and
Ritter, D.
1996.
Electron transport in heavily doped bases of InP/GaInAs HBT's probed by magneto transport experiments.
IEEE Transactions on Electron Devices,
Vol. 43,
Issue. 8,
p.
1187.
Svizhenko, A.
Balandin, A.
Bandyopadhyay, S.
and
Stroscio, M. A.
1998.
Electron interaction with confined acoustic phonons in quantum wires subjected to a magnetic field.
Physical Review B,
Vol. 57,
Issue. 8,
p.
4687.
Kinsler, P.
Harrison, P.
and
Kelsall, R. W.
1998.
Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission.
Physical Review B,
Vol. 58,
Issue. 8,
p.
4771.
Hosseini, S.E.
and
Faez, R.
2000.
Quantum hydrodynamic equations with quantum corrected potential [RTD simulation].
p.
191.
Kosina, H.
Nedjalkov, M.
and
Selberherr, S.
2000.
Theory of the Monte Carlo method for semiconductor device simulation.
IEEE Transactions on Electron Devices,
Vol. 47,
Issue. 10,
p.
1898.
Garcias-Salva, P.
Lopez-Gonzalez, J.M.
and
Prat, L.
2001.
A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs.
IEEE Transactions on Electron Devices,
Vol. 48,
Issue. 6,
p.
1045.
Fossum, J.G.
2002.
A model too hot to handle? [MOSFET model].
IEEE Circuits and Devices Magazine,
Vol. 18,
Issue. 3,
p.
26.
Lundstrom, M.
and
Ren, Z.
2002.
Essential physics of carrier transport in nanoscale MOSFETs.
IEEE Transactions on Electron Devices,
Vol. 49,
Issue. 1,
p.
133.
Ren, Z.
Hegde, S.
Doris, B.
Oldiges, P.
Kanarsky, T.
Dokumaci, O.
Roy, R.
Leong, M.
Jones, E.C.
and
Wong, H.-S.P.
2002.
An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs.
IEEE Electron Device Letters,
Vol. 23,
Issue. 10,
p.
609.
Rhew, Jung-Hoon
Ren, Zhibin
and
Lundstrom, Mark S.
2002.
Benchmarking Macroscopic Transport Models for Nanotransistor TCAD.
Journal of Computational Electronics,
Vol. 1,
Issue. 3,
p.
385.
Kasemsuwan, V.
2002.
A physics-based model of short channel MOSFET including velocity overshoot.
p.
291.
Rahman, A.
and
Lundstrom, M.S.
2002.
A compact scattering model for the nanoscale double-gate MOSFET.
IEEE Transactions on Electron Devices,
Vol. 49,
Issue. 3,
p.
481.
Clerc, R.
Palestri, P.
and
Abramo, A.
2002.
Investigation on Convergence and Stability of Self-Consistent Monte Carlo Device Simulations.
p.
191.
Munteanu, D.
and
Le Carval, G.
2002.
Assessment of Anomalous Behavior in Hydrodynamic Simulation of CMOS Bulk and Partially Depleted SOI Devices.
Journal of The Electrochemical Society,
Vol. 149,
Issue. 10,
p.
G574.
GRASSER, TIBOR
KOSINA, HANS
and
SELBERHERR, SIEGFRIED
2003.
HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS.
International Journal of High Speed Electronics and Systems,
Vol. 13,
Issue. 03,
p.
873.
KOSINA, HANS
and
NEDJALKOV, MIHAIL
2003.
PARTICLE MODELS FOR DEVICE SIMULATION.
International Journal of High Speed Electronics and Systems,
Vol. 13,
Issue. 03,
p.
727.
Svizhenko, A.
and
Anantram, M.P.
2003.
Role of scattering in nanotransistors.
IEEE Transactions on Electron Devices,
Vol. 50,
Issue. 6,
p.
1459.
Grasser, T.
Kosina, H.
and
Selberherr, S.
2003.
Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications].
p.
63.
Rossani, A
Spiga, G
and
Domaingo, A
2003.
Band-trap capture and emission in the generalized kinetic theory of electrons and holes.
Journal of Physics A: Mathematical and General,
Vol. 36,
Issue. 48,
p.
11955.