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  3. Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
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  • Publisher:
    Cambridge University Press
    Publication date:
    February 2018
    March 2018
    ISBN:
    9781316676899
    9781107162044
    DOI:
    https://doi.org/10.1017/9781316676899
    Dimensions:
    (247 x 174 mm)
    Weight & Pages:
    0.64kg, 252 Pages
    Dimensions:
    Weight & Pages:
    • Subjects:
    Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
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    Subjects:
    Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
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    Book description

    The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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