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Characterization of Strain Distribution and Annealing Response in Deformed Silicon Crystals

Published online by Cambridge University Press:  06 March 2019

S. Weissmann  and
T. Saka
S. Weissmann
Affiliation:
College of Engineering, Rutgers University New Brunswick, New Jersey 08903
T. Saka
Affiliation:
College of Engineering, Rutgers University New Brunswick, New Jersey 08903
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Abstract

The strain distribution associated with incipient microplasticity and its response to subsequent annealing were studied in smooth and notched silicon crystals. The characterization of plastic and elastic residual strains was carried out by X-ray topography based on PendellBsung Fringe (PF) patterns and was supplemented by X-ray doublecrystal diffractometry and specimen scanning with automatic Bragg angle control (ABAC). It was shown that the sites at or near the surface were preferred sites where, upon mechanical deformation, dislocation sources became activated. Microplastic zones thus formed constrained long-range, residual, elastic strains.

Type
X-Ray Topography
Information
Advances in X-Ray Analysis , Volume 20: Twenty-Fifth Annual Conference on Applications of X-ray Analysis, August 4-6, 1976 , 1976 , pp. 237 - 244
Copyright
Copyright © International Centre for Diffraction Data 1976

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References

1. Weissmann, S., Tsunekawa, Y., and Kannan, V. C., “Fracture Studies in Silicon Crystals by X-Ray Pendellösung Fringes and Double Crystal Diffractometry,” Met. Trans. 4, 376–377 (1973).Google Scholar
2. Tsunekawa, Y. and Weissmann, S., “Importance of Microplasticity in the Fracture of Silicon,” Met. Trans. 5, 1585-1593 (1974).Google Scholar
3. Tsunekawa, Y. and Weissmann, S., “Dislocation Generation Associated with Crack Growth of Silicon Crystals Containing Precipitate Defect Structure,” Mat. Sci. Eng. 17, 51–56 (1975).Google Scholar
4. Storm, A. R., “Automatic Bragg Angle Control with Simple, Inexpensive Electronics,” Rev. Sci. Instrum. 46, 883–885 (1975).Google Scholar
5. Rozgonyi, G. A. and Ciesielka, T. J., “X-Ray Determination of Stresses in Thin Films and Substrates by Automatic Bragg Angle Control,” Rev. Sci. Instrum. 44, 1053-1057 (1973).Google Scholar
6. Hirth, J. P. and Lothe, J., Theory of Dislocations, p. 129, McGraw- Hill (1968).Google Scholar
7. Stoney, G. G., “The Tension of Metallic Films Deposited by Electrolysis,” Proc. Roy. Soc. (London) A82, 172–175 (1909).Google Scholar
8. Tetelman, A. S. and McEvily, A. J. Jr., Fracture of Structural Materials, p. 47, John Wiley (1967).Google Scholar